AP13P15GS/P Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D Simple Drive Requirement Fast Switching Characteristic -150V RDS(ON) 300m ID G RoHS Compliant BVDSS -13A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. GD S TO-263(S) The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP13P15GP) are available for low-profile applications. G Absolute Maximum Ratings Symbol Parameter D TO-220(P) S Rating Units VDS Drain-Source Voltage -150 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current, VGS @ 10V -13 A ID@TC=100 Continuous Drain Current, VGS @ 10V -8.2 A 1 IDM Pulsed Drain Current 52 A PD@TC=25 Total Power Dissipation 96 W Linear Derating Factor 0.77 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 1.3 /W Rthj-a Thermal Resistance Junction-ambient Max. 62 /W Data and specifications subject to change without notice 200728051-1/4 AP13P15GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -150 - - V - -0.1 - V/ VGS=-10V, ID=-7A - - 300 m BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA VGS=0V, ID=-1mA 2 Max. Units RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-7A - 6 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-150V, VGS=0V - - -25 uA Drain-Source Leakage Current (Tj=150oC) VDS=-120V, VGS=0V - - -100 uA Gate-Source Leakage VGS= 20V - - 100 nA ID=-7A - 38 60 nC IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-120V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-10V - 15 - nC VDS=-75V - 11 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-7A - 21 - ns td(off) Turn-off Delay Time RG=10,VGS=-10V - 60 - ns tf Fall Time RD=10.7 - 36 - ns Ciss Input Capacitance VGS=0V - 1210 1940 pF Coss Output Capacitance VDS=-25V - 220 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Rg Gate Resistance f=1.0MHz - 3.5 5 Min. Typ. IS=-7A, VGS=0V - - -1.3 V IS=-7A, VGS=0V, - 110 - ns dI/dt=-100A/s - 620 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP13P15GS/P 25 25 -10V -7.0V T C =25 o C 20 20 -ID , Drain Current (A) -ID , Drain Current (A) -10V TC=150oC 15 -5.0V 10 -4.5V 5 -7.0V 15 -5.0V 10 -4.5V 5 V G = - 3 .0V V G = - 3 .0V 0 0 0 5 10 15 20 25 0 5 10 15 20 25 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1400 2.3 I D =- 7 A V G =-10V I D = -7 A T C =25 Normalized RDS(ON) 1.8 RDS(ON) (m ) 1000 600 1.3 0.8 0.3 200 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 6 Normalized -VGS(th) (V) 1.5 4 o o T j =25 C -IS(A) T j =150 C 2 1.1 0.7 0.3 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP13P15GS/P f=1.0MHz 12 10000 -VGS , Gate to Source Voltage (V) 10 I D = -7A V DS = -120V C iss 1000 C (pF) 8 6 C oss 100 4 C rss 2 10 0 0 10 20 30 40 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthjc) 1 100us 10 -ID (A) 1ms 10ms 100ms DC 1 T C =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.1 0.01 0.1 1 10 100 1000 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 8 VG V DS =-5V -ID , Drain Current (A) 6 QG T j =25 o C T j =150 o C -10V QGS 4 QGD 2 Charge Q 0 0 2 4 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4