February 6, 1997 TIM5964-35SLA-151 1. RF PERFORMANCE SPECIFICATIONS (Ta= 25 C) CHARACTERISTICS | SYMBOL | CONDITION | MIN. | TYP. |MAX.| UNIT Output Power at 1dB PidB 45.0| 45.5| | dBm Compression Point Power Gain at 1dB Gi1dB VpbSs= 10V 7.0 | 80; | dB Compression Point f=5.85- 6.65GHz Drain Current IDS1 | 80190] C 3rd Order Intermodulation IMa NOTE 1 -42 | -45 | | dBc Distortion Drain Current IDS2 | 80 | 9.0 A Channel Temperature ATch NOTE 2 | 100} c Rise NOTE 1: Two Tone Test, Po=35dBm (Single Carrier Level) NOTE 2: Rth(c-c) x[VDSxIDS] 2. ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTICS | SYMBOL |; CONDITION | MIN. | TYP. |MAX.| UNIT Transconductance gm VDS= 3V |6500; | mS IDS= 10.5A Pinch-off Voltage VGSoff |VDS= 3V -1.0 | -2.5 | -4.0 | V los= 140mA Saturated Drain Current IDSS VDS= 3V | 20 | 26 A ~ VGas= 0V Gate-Source Vaso jlas= -420 pA -5 | V Breakdown Voltage Thermal Resistance Rith(c-c) (Channel to Case] | 1.0 | 1.3 |C/AW Applications Engineering Solid-State Engineering Department TOSHIBA CORPORATION, Komukai WorksTIM5964-35SLA-151 ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTICS SYMBOL UNIT RATING "| Drain-Source Voltage Vos Vv 45 Gate-Source Voltage Vas Vv 5 ~| Grain Current los A 26 Total Power Dissipation (Tc # 25C) Py w 115 Channel Temperature Ten c 178 Storage Temperature Tag *c 65~175 PACKAGE OUTLINE (2-16G1B) 0.7+0.15 Unit in men 2 5 D Gate @ Source ee @ Orain ov . =| @ @ |3 3] Lt |e o @ Jom due A & a E 204203 | 24,5 Max, 7 164 max. F & co 31% a rt I | a . 4) a> HANDUNG PRECAUTIONS FOR PACKAGED TYPE | Soldering Iron should be grounded and the operating time should not exceed 10 seconds at 260C.