BCV71 BCV72 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 FEBRUARY 95 PARTMARKING DETAIL: BCV71 BCV72 BCV71R BCV72R K7 K8 K6 K9 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 200 mA Continuous Collector Current IC 100 mA 330 mW -55 to +150 C Power Dissipation at Tamb=25C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL Collector- base Cut-Off Current ICBO Base - Emitter Voltage VBE Collector-Emitter Saturation Voltage VCE(sat) 120 210 Base-Emitter Saturation Voltage VBE(sat) 750 850 Static Forward Current Transfer Ratio BCV71 hFE BCV72 MIN. 550 110 200 Transition Frequency fT Collector Capacitance CTC Noise Figure N TYP. 90 150 MAX. UNIT CONDITIONS. 100 10 nA mA VCB=20V VCB=20V,Tamb=100C 750 mV IC=2mA, VCE = 5V 250 mV mV IC=10mA, IB = 0.5mA IC= 50mA, IB =2.5mA mV mV IC=10mA, IB=0.5mA IC =50mA, IB=2.5mA 220 IC=10mA, VCE=5V IC=2mA, VCE=5V 450 IC=10mA, VCE=5V IC=2mA, VCE=5V 300 MHz IC=10mA, VCE=5V f = 35MHz 4 pF IE =Ie =0, VCB = 10V f= 1MHz 10 dB IC= 200A, VCE = 5V RS =2K, f=1KHz B= 200Hz Spice parameter data is available upon request for this device PAGE NO