SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 FEBRUARY 95
PARTMARKING DETAIL: BCV71 K7
BCV72 K8
BCV71R K6
BCV72R K9
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 200 mA
Continuous Collector Current IC100 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector- base
Cut-Off Current
ICBO 100
10
nA
mA
VCB
=20V
VCB
=20V,Tamb
=100°C
Base - Emitter Voltage VBE 550 750 mV IC
=2mA, VCE = 5V
Collector-Emitter
Saturation Voltage
VCE(sat) 120
210
250 mV
mV
IC
=10mA, IB
= 0.5mA
IC
= 50mA, IB
=2.5mA
Base-Emitter
Saturation Voltage
VBE(sat) 750
850
mV
mV
IC
=10mA, IB
=0.5mA
IC
=50mA, IB
=2.5mA
Static Forward BCV71
Current Transfer
Ratio BCV72
hFE 110
90
220
IC
=10mA, VCE
=5V
IC
=2mA, VCE=5V
200
150
450
IC
=10mA, VCE
=5V
IC
=2mA, VCE=5V
Transition Frequency fT300 MHz IC
=10mA, VCE
=5V
f = 35MHz
Collector Capacitance CTC 4pFI
E =Ie =0, VCB
= 10V
f= 1MHz
Noise Figure N 10 dB IC
= 200µA, VCE
= 5V
RS =2KΩ, f=1KHz
B= 200Hz
Spice parameter data is available upon request for this device
BCV71
BCV72
PAGE NO
C
B
E
SOT23
