OKI Semiconductor MSC23432A-xxBS8/DS8 4,194,304-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23432A-xxBS8/DS8 is a fully decoded 4,194,304-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 16-Mb DRAMs (4M x 4) in SOJ packages mounted with eight decoupling capacitors on a 72-pin glass epoxy single-inline package. This module is generally used for non-parity memory expansion applications such as fax machines, printers and personal computers. FEATURES * 4-Meg x 32-bit organization * 72-Pin Socket Insertable Module MSC23432A-xxBS8 : Gold tab MSC23432A-xxDS8 : Solder tab * Single 5 V supply +10% tolerance * Access times : 60, 70, 80 ns * Input : TTL compatible * Output : TTL compatible, 3-state : * Refresh : 2048 cycles /32 ms + CAS before RAS refresh, CAS before RAS hidden refresh, RAS-only refresh capability * Multi-bit test mode capability * Fast Page Mode capability PRODUCT FAMILY Family Access Time (Max. | cycle Time Power Dissipation trac | taa | tcac (Min.) | Operating (Max.)| Standby (Max.) MSC23432A-60BS8/0S8 6Ons | 30ns | 15 ns 110 ns 5280 mW 44 mW MSC23432A-70BS8/DSB Ons | 35ns | 20ns 130 ns 4840 mW (MOS level) | MSC23432A-80BS8/DS8 BOns | 40ns | 20ns 150 ns 4400 mW 119MSC 23432A-xxBS8/DS8 OKI Semiconductor PIN CONFIGURATION MSC23432A-xxBS8/DS8 107.95 +0.2 5.28 Max. 101.19 Typ. TT $3.18 rE TD! typt 1) 10.18) 635d] [1 9 3.50 tnd 2.03 Typ. t 1 6.35 Typ. 1.27 +845 *1 The common size difference of the board width 12.5 mm of its height is specified as +0.2, The value above 12.5 mm is specified as +0.5. Pin No. |Pin Name} | Pin No. |Pin Nama] | Pin No. |Pin Name] | Pin No. |Pin Name| | Pin No. |Pin Name 1 Vss 16 Aa 31 A8 46 NC 6t DQ13 2 Dao 17 AD 32 AQ 47 WE 62 DQ30 3 DQ16 18 AG 33 NC 48 NC 63 DQ14 4 DG1 19 A10 34 RAS? 49 Das 64 DQ31 5 DQI7 20 DQ4 35 NC 50 0Q24 65 DQ15 6 DQ2 21 ba20 36 NG 1 0Q9 66 NC T DOE 22 Das a7 NG 52 DG25 67 PDt 8 DQ3 23 0021 38 NC 53 DQ10 68 PO2 9 DQ13 24 DQ6 39 Vss 54 DQ26 69 PD3 10 Vec 25 DQ22 40 CASO 55 DQ11 70 PO4 11 NC 26 DQ7 41 CASE 56 Da27 71 NC 12 AO 27 D023 42 CASS 57 DQ12 72 Vss 13 Al 28 Av 43 CAST 58 DQ28 14 A2 29 NC 44 RASO 59 Vec 15 A3 30 Voc 45 NC 60 DaQ29 Presence Detect Pins Pin No. PinName | sonse/se | -7opse/ose | sopseDss 67 PD1 Vss Vss Vss 68 PD2 NC NC NC 69 PDS NC Vss NG 70 PD4 NC NC Vss 120OKI Semiconductor MSC23432A-xxBS8/DS8 BLOCK DIAGRAM AO -A10 We | A0- aig DQ F 000 #| A0- aig BO pate PASO FAS Og we RASZ RAS Oo | pata CASO CH bg Loos CHS2 CAS oa Lonia We OF We OE Vee Vss IG Vec Vss IS @| a0 -Atg DO F- Da4 e+ A0- ato OO -- D020 Fag 00 |-005 wag 00 |-0021 00 | 006 pa + 0022 CHS 00 + pa? cs pa | pae3 CE bE Vee Vss Ib Veo Vag ib @4| A0- aio DQ [ Das #4 Ag- arg 08 | BG24 RAS a} dag FAs 00 | -0025 ast us 02 bai0 CHS as 00 = a26 we | ba ba we 20 [baer CE Vee Vg LG Vee Vs5 ty fare pe fagr pees ais Da pata ne po + D030 we Da fonts we OG jaa OE | OE Veo Veg > Vec Vg Kb Vee G2 Ce Vsg #& 121MSC23432A-xxB8S8/DS8 OKI Semiconductor ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Symbol Rating Unit Voltage on Any Pin Relative to Vss | Vin, Vour -1.0to 7.0 v Voltage Voc Supply Relative to Vss Vec -1.0 to 7.0 V Short Circuit Output Current los 50 mA Power Dissipation Pp W Operating Temperature Topr Oto 70 C Storage Temperature Tstg 40 to 125 C Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Recommended Operating Conditions Ta = 0C to 70C} Parameter Symbol Min. Typ. Max. Unit Vec 45 5.0 5.5 V Power Supply Voltage Vg 0 0 0 v input High Voltage Vin 2.4 - 65 v Input Low Voitage Vit -1.6 0.8 V Capacitance (Ta = 25C, f = 1 MHz) Parameter Symbol Typ. Max. Unit input Capacitance (AO - A10) Cin 57 pF input Capacitance (WE) Cin2 _ 65 pF Input Capacitance (RASO, RAS2) Cina _ 36 pF Input Capacitance (CASO - CAS3) Cina _ 20 pF \/0 Capacitance (DQO - DQ31) Coo _ 16 pF Note: Capacitance measured with Boonton Meter. 122OKI Semiconductor MSC23432A-xxBS8/DSs DG Characteristics Woe = 5 V 210%, Ta = 0C to 70C) MSC23432A | MSC23432A | MSC23432A Parameter Symbol] Condition -60BS8/DS8 | -70BS8/DS8 | -80BS8/DS8 | Unit |Note Min. | Max. | Min. | Max, | Min. | Max. OVEViS65V; Input Leakage Current Itt | All other pins not ~80 80 -80 80 80 BO ; WA under test = 0 V Output Leakage Current | Io Owevce sy | 10} 10 | -10| 10 | -10} 10 | a Output High Voltage Von | low = -5.0 mA 2.4 Vee 2.4 | Veo 2.4 Veo | V Output Low Voitage Vor | lo. = 4.2 mA 0 0.4 0 0.4 0 04 V Average Power : Supply Current lcci RAS, CAS cycling, 960 | | 880 | 800 | mA] 1,2 . tre = Min. (Operating) Power Supply | nas ae: Vin _ 16 | | 16 | 16 | mA; 1 cece : Current (Standby) > Veo-0.2 V - 8 _ 8 _ 8 mA] t Average Power RAS cycling, Supply Current Ioc3 | CAS = Vin, | 960; | 880 | | 800 | mAl1,2 (RAS-only Refresh) tac = Min. Average Power RAS cycling, Supply Current lece | CAS before RAS, | 960} + 880 | | 800 | mA|1,2 (CAS before RAS Refresh) tac = Min. Average Power RAS = Vi, Supply Gurrent lecz | CAS cycling, ~ seo | | 800 | | 720 | mA} 1,3 (Fast Page Mode) tec = Min. Notes: 1. Specified values are obtained with the output open. 2. Address can be changed once or less while RAS=Vj,. 3. Address can be changed once or less while CAS=V jy. 123MSC23432A-xxBS8/DS3 OKI Semiconductor AC Characteristics (1/2) (Voc = 5 V 210%, Ta =0C to 70C) Note 1,2,3,9,10 MSC23432A | MSC23432A | MSC23432A Parameter Symbol| -60BS8/DS8 | -70BS8/0S8 | -80BS3/DSE& | Unit) Note Min. | Max. | Min. | Max. | Min. | Max. Random Read or Write Cycle Time tac | 110 _ 130 _ 150 _ ns Fast Page Mode Cycle Time tpc 40 _ 45 _ 50 _ ns Access Time from RAS trac | 60 _ 70 80 ns 14.5.6 Access Time from CAS teac | 15 _ 20 _ 20 ns | 4,5 Access Time from Column Address TAA _ 30 _ 35 _ 40 ns | 4,6 Access Time from CAS Precharge tcpa _ 36 _ 40 _ 45 ns 4 Output Low impedance Time from CAS teLz 0 _ 0 0 | ns] 4 Output Buffer Turn-off Delay Time torr 0 15 0 20 0 20 ns | 7 Transition Time tr 3 50 3 50 3 50 ns 3 Retresh Period trep | 32 _ 32 _ 32 ms RAS Precharge Time tre | 40 50 _ 60 | As RAS Pulse Width taas | 60 10K | 70 10K. 80 10K | ns RAS Pulse Width (Fast Page Mode) tanse | 60 | 100K | 70 | 100K | 80 | 100K | ns RAS Hold Time trsH 15 _ 20 _ 20 _ ns CAS Precharge Time tep | 10 10 _ 10 | 1s CAS Pulse Width teas | 15 | 10K | 20 | 10K | 20 10K | ns TAS Hold Time tosy 60 _ 70 _ 80 _ ns CAS to RAS Precharge Time terp | 10 | 10 | 10 | | ns RAS to CAS Delay Time taco | 20 45 20 50 20 60 ns | RAS to Column Address Delay Time tran | 15 30 15 35 15 40 ns | 6 Row Address Set-up Time tasa 0 _ 0 ad 0 _ ns Row Address Hold Time tray | 10 _ 10 _ 15 _ ns Column Address Set-up Time tasc 0 _ 0 _ 0 _ as Column Address Hoid Time tea | 15 _ 15 _ 15 ns Column Address Hold Time from RAS tar 50 _ 55 _ 60 _ ns Column Address to RAS Lead Time tra. | 20 _ 35 _ 40 } ns 124OKI Semiconductor MSC23432A-xxBS8/DS8 AG Characteristics (2/2) (Voc =5 V #10%, Ta = 0 to 70C) Note 1,2.3,9,10 MSC234324 | MSG23432A | MSC23432A Parameter Symbol] -60BS8/DS8 | -70BS8/DSS | -80BS8/DSS |Unit | Note Min. | Max. | Min. | Max. | Min. | Max. Read Command Set-up Time tracs 0 _ 0 _ 0 _ ns Read Command Hatd Time tacH 0 _ 0 > 0 _ RS Read Command Hold Time referenced to RAS | tary 0 _ 0 _ 0 ~ ns Write Command Set-up Time twes 0 _ 0 - 0 _ ns Write Command Hold Time {wou 10 _ 15 15 _ ns Write Command Hold Time from RAS twer | 45 | 55 60 | ns Write Command Pulse Width twe 10 _ 10 _ 10 _ ns Write Command to RAS Lead Time taw. | 15 | 20 20 | ns Write Command to CAS Lead Time tow. |. 15 | 20 20 | ns Data-in Set-up Time tos 0 _ 0 _ 0 _ ns Data-in Hold Time tou 16 _ 15 _ 15 _ ns Data-in Hold Time from RAS toun | 50 | 55 _ 60 | | ns CAS Active Delay Time from RAS Precharge| treo | 10 | 10 0 | | os RAS to CAS Set-up Time (CAS before RAS)! tcsa | 10 | 10 _ 10; | ns RAS to CAS Hold Time (CAS before RAS) | tcun | 20 | 20 _ 20 | -- | os TAS Precharge Time (Refresh Counter Test)| tepr 40 _ 40 ~ 40 _ ns WE to RAS Precharge Time (CAS before RAS) | twap | 10 | 10 10 | jos WE Hold Time trom RAS (CAS before RAS)! tway | 10 10 10 | ns RAS to WE Set-up Time (Test Mode) twrs | 10 | 10 = 10 | | as RAS to WE Hold Time (Test Mode} tw | 20 | 20 20 | ns 125MSC 23432A-xxBS8/DS8 Notes: 126 1. 10. OKI Semiconductor A start-up delay of 200 ts is required after power-up followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved. When using the internal refresh counter, a minimum of eight CAS before RAS initialization cycles is required. AC mesurement assume ty = 5 ns. Vin (Min.) and Vip (Max.) are reference levels for measuring input timing signals. Transition times are measured between Vy and V},. Measured with a load circuit equivalent to 2 TTL loads and 100 pF. Operation within the tpcp (Max.} limit ensures that trac (Max.) can be met. tcp (Max.) is specified as a reference point only. Iftgcpis greater than the specified trcp (Max.) limit, access time is controlled by tcac. . Operation within the tpap (Max.) limit ensures that tp ac (Max.) can be met. trap (Max.) is specified as a reference point only. If tpapis greater than the specified trap (Max.) limit, access time is controlled by ta a- . torr (Max.) defines the time at which the output achieves an open circuit condition and is not referenced to output voltage levels. trcH Or tprH must be satisfied for a read cycle. . The test mode is initiated by performing a WE and CAS before RAS refresh cycle. This mode is latched and remains in effect until the exit cycle is generated. The test mode specified in this data sheet is an 8-bit parallel test fFunction.CA10,CA1 and CAO are not used. In a read cycle, if all internal bits are equal, the DQ pin will indicate a high level. If any internal bits are not equal, the DQ pin will indicate alow level. The test mode is cleared and the memory device returned to its normal operating state by performing a RAS-only refresh cycle or a CAS before RAS retresh cycle. In a test mode read cycle, the access time parameters are delayed by 5 ns. The test mode parameters are obtained by adding 5 ns to the normal! read cycle values. See ADDENDUM E for AC Timing Waveforms