ICE2QR2280G1XUMA1 - Infineon Technologies

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Data Sheet

V2.2 2014-07-10

CoolSET™Q1

ICE2QR2280G-1

Off-Line SMPS Quasi-Resonant PWM

Controller with integrated 800V CoolMOS™

and Startup cell in DSO-16/12

Power Management & Multimarket

Edition 2014-07-10

Published by Infineon Technologies AG,

81726 Munich, Germany.

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CoolSET™Q1

ICE2QR2280G-1

Data Sheet 3 V2.2, 2014-07-10

Trademarks of Infineon Technologies AG

AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,

CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,

EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,

ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,

POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,

ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™,

TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.

Other Trademarks

Advance Design System™(ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,

PRIMECELL™, REALVIEW™, THUMB™, µVision™of ARM Limited, UK. AUTOSAR™is licensed by

AUTOSAR development partnership. Bluetooth™of Bluetooth SIG Inc. CAT-iq™of DECT Forum.

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HYPERTERMINAL™of Hilgraeve Incorporated. IEC™of Commission Electrotechnique Internationale. IrDA™

of Infrared Data Association Corporation. ISO™of INTERNATIONAL ORGANIZATION FOR

STANDARDIZATION. MATLAB™of MathWorks, Inc. MAXIM™of Maxim Integrated Products, Inc.

MICROTEC™, NUCLEUS™of Mentor Graphics Corporation. MIPI™of MIPI Alliance, Inc. MIPS™of MIPS

Technologies, Inc., USA. muRata™of MURATA MANUFACTURING CO., MICROWAVE OFFICE™(MWO) of

Applied Wave Research Inc., OmniVision™of OmniVision Technologies, Inc. Openwave™Openwave Systems

Inc. RED HAT™Red Hat, Inc. RFMD™RF Micro Devices, Inc. SIRIUS™of Sirius Satellite Radio Inc.

SOLARIS™of Sun Microsystems, Inc. SPANSION™of Spansion LLC Ltd. Symbian™of Symbian Software

Limited. TAIYO YUDEN™of Taiyo Yuden Co. TEAKLITE™of CEVA, Inc. TEKTRONIX™of Tektronix Inc.

TOKO™of TOKO KABUSHIKI KAISHA TA. UNIX™of X/Open Company Limited. VERILOG™, PALLADIUM™

of Cadence Design Systems, Inc. VLYNQ™of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™

of WIND RIVER SYSTEMS, INC. ZETEX™of Diodes Zetex Limited.

Last Trademarks Update 2011-11-11

CoolSET™Q1

ICE2QR2280G-1

Data Sheet 4 V2.2, 2014-07-10

Revision History

Major changes since previous revision

Date Version Changed By Change Description

2014-07-10 2.2 Added Ptot drawing.

Revised IVCCcharge1, IVCCcharge2, IZCMAX and block

diagram.

Upgraded the operating temperature from -25°C

to -40°C.

We Listen to Your Comments

Is there any information in this document that you feel is wrong, unclear or missing?

Your feedback will help us to continuously improve the quality of our documentation.

Please send your proposal (including a reference to this document title/number) to:

ctdd@infineon.com

CoolSET™Q1

ICE2QR2280G-1

Data Sheet 5 V2.2, 2014-07-10

Table of Contents

Revision History ....................................................................................................................................................4

Table of Contents ..................................................................................................................................................5

1 Pin Configuration and Functionality...............................................................................................7

1.1 Pin Configuration with PG-DSO-16/12................................................................................................7

1.2 Pin Functionality..................................................................................................................................7

2 Representative Block Diagram ........................................................................................................8

3 Functional Description .....................................................................................................................9

3.1 VCC Pre-Charging and Typical VCC Voltage During Start-up ...........................................................9

3.2 Soft-start..............................................................................................................................................9

3.3 Normal Operation..............................................................................................................................10

3.3.1 Digital Frequency Reduction........................................................................................................10

3.3.1.1 Up/down counter.....................................................................................................................10

3.3.1.2 Zero crossing (ZC counter).....................................................................................................11

3.3.2 Ringing suppression time.............................................................................................................12

3.3.2.1 Switch on determination..........................................................................................................12

3.3.3 Switch Off Determination .............................................................................................................12

3.4 Current Limitation..............................................................................................................................12

3.4.1 Foldback Point Correction............................................................................................................13

3.5 Active Burst Mode Operation............................................................................................................14

3.5.1 Entering Active Burst Mode Operation.........................................................................................14

3.5.2 During Active Burst Mode Operation ...........................................................................................14

3.5.3 Leaving Active Burst Mode Operation .........................................................................................14

3.6 Protection Functions .........................................................................................................................15

4 Electrical Characteristics ...............................................................................................................17

4.1 Absolute Maximum Ratings ..............................................................................................................17

4.2 Operating Range...............................................................................................................................17

4.3 Characteristics...................................................................................................................................18

4.3.1 Supply Section.............................................................................................................................18

4.3.2 Internal Voltage Reference ..........................................................................................................18

4.3.3 PWM Section ...............................................................................................................................19

4.3.4 Current Sense..............................................................................................................................19

4.3.5 Soft Start ......................................................................................................................................19

4.3.6 Foldback Point Correction............................................................................................................19

4.3.7 Digital Zero Crossing....................................................................................................................20

4.3.8 Active Burst Mode........................................................................................................................20

4.3.9 Protection.....................................................................................................................................21

4.3.10 CoolMOSTM Section.....................................................................................................................21

6 Input power curve ...........................................................................................................................24

7 Outline Dimension...........................................................................................................................25

8 Marking.............................................................................................................................................26

CoolSET™Q1

ICE2QR2280G-1

Data Sheet 6 V2.2, 2014-07-10

Off-Line SMPS Quasi-Resonant PWM Controller with integrated 800V

CoolMOSTM and startup cell in DSO-16/12

Product Highlights

Active Burst Mode to reach the lowest standby power requirement

<100mW @ no load

Quasi resonant operation

Digital frequency reduction for better overall system efficiency

Integrated 800V startup cell

Pb-free lead plating, halogen free mold compound, RoHS compliant

Features

•800V avalanche rugged CoolMOSTM with built-in startup cell

•Quasi resonant operation till very low load

•Active burst mode operation for low standby input power (< 0.1W)

•Digital frequency reduction with decreasing load for reduced switching loss

•Built-in digital soft-start

•Foldback point correction, cycle-by-cycle peak current limitation and maximum on time limitation

•Auto restart mode for VCC over-voltage protection, under-voltage protection, over-load protection and over-

temperature protection

•Latch-off mode for adjustable output over-voltage protection and transformer short-winding protection

•Lower Vcc turn off threshold

Description

The ICE2QR2280G-1 is derived from CoolSETTM-Q1. The only difference is it has a lower Vcc turn off threshold.

The CoolSETTM-Q1 is the first generation of quasi-resonant controller and CoolMOSTM integrated power IC.

Operating the MOSFET switch in quasi-resonant mode, lower EMI, higher efficiency and lower voltage stress on

secondary diodes are expected for the SMPS. Based on the BiCMOS technology, the CoolSETTM-Q1 series has

a wide operation range (up to 25V) of IC power supply and lower power consumption. It also offers many

advantages such as quasi-resonant operation till very low load, increasing the higher average system efficiency

compared to other conventional solutions, achieving ultra-low power consumption with small and controllable

output voltage ripple at standby mode with Active Burst Mode operation, etc.

Applications

Adapter/Charger,

LCD monitor, DVD R/W, DVD Combo, Blue-ray/DVD player, Set-top box,

Auxiliary power supply for server, PC, Printer, TV, Home theater/Audio System, etc.

Figure 1 Typical Application

Type Package Marking

1230VAC ±15%

85-265 VAC

ICE2QR2280G-1 PG-DSO-16/12 ICE2QR2280G-1 800V 2.26 53W 30W

1 typ @ T=25°C

2 Calculated maximum input power rating at Ta=50°C, Ti=125°C and with 232mm2copper area as heat sink.

PG-DSO-16/12

CoolSET™Q1

ICE2QR2280G-1

Pin Configuration and Functionality

Data Sheet 7 V2.2, 2014-07-10

1 Pin Configuration and Functionality

1.1 Pin Configuration with PG-

DSO-16/12

Table 1 Pin configuration

Pin Symbol Function

1 ZC Zero Crossing

2 FB Feedback

3 N.C. Not Connected

4 CS Current Sense/

800V1CoolMOSTM Source

5 Drain 800V1) CoolMOSTM Drain

6 Drain 800V1) CoolMOSTM Drain

7 Drain 800V1) CoolMOSTM Drain

8 Drain 800V1) CoolMOSTM Drain

9 N.C. Not Connected

10 N.C. Not Connected

11 VCC Controller Supply Voltage

12 GND Controller Ground

Figure 2 Pin configuration PG-DSO-16/12

(top view)

Note : Pin 5, 6, 7 and 8 are shorted within the

package.

1at Tj=25°C

1.2 Pin Functionality

ZC (Zero Crossing)

At this pin, the voltage from the auxiliary winding

after a time delay circuit is applied. Internally, this

pin is connected to the zero-crossing detector for

switch-on determination. Additionally, the output

overvoltage detection is realized by comparing the

voltage Vzc with an internal preset threshold.

FB (Feedback)

Normally an external capacitor is connected to this

pin for a smooth voltage VFB. Internally this pin is

connected to the PWM signal generator block for

switch-off determination (together with the current

sensing signal), to the digital signal processing

block for the frequency reduction with decreasing

load during normal operation, and to the Active

Burst Mode controller block for entering Active

Burst Mode operation determination and burst ratio

control during Active Burst Mode operation.

Additionally, the open-loop / over-load protection is

implemented by monitoring the voltage at this pin.

CS (Current Sense)

This pin is connected to the shunt resistor for the

primary current sensing externally and to the PWM

signal generator block for switch-off determination

(together with the feedback voltage) internally.

Moreover, short-winding protection is realized by

monitoring the voltage Vcs during on-time of the

main power switch.

Drain (Drain of integrated CoolMOSTM)

Drain pin is the connection to the drain of the

internal CoolMOSTM.

VCC (Power supply)

VCC pin is the positive supply of the IC. The

operating range is between VVCCoff and VVCCOVP.

GND (Ground)

This is the common ground of the controller.

CoolSET™Q1

ICE2QR2280G-1

Representative Block Diagram

Data Sheet 8 V2.2, 2014-07-10

2 Representative Block Diagram

Figure 3 Representative Block Diagram

CoolSET™Q1

ICE2QR2280G-1

Functional Description

Data Sheet 9 V2.2, 2014-07-10

3 Functional Description

3.1 VCC Pre-Charging and Typical VCC Voltage During Start-up

ICE2QR2280G-1 is derived from CoolSETTM-Q1. The only difference is it has a lower Vcc turn off threshold. The

CoolSETTM-Q1has a startup cell which is integrated into the CoolMOSTM. As shown in Figure 3, the start cell

consists of a high voltage device and a controller, whereby the high voltage device is controlled by the

controller. The startup cell provides a pre-charging of the VCC capacitor till VCC voltage reaches the VCC

turned-on threshold VVCCon and the IC begins to operate.

Once the mains input voltage is applied, a rectified voltage shows across the capacitor Cbus. The high voltage

device provides a current to charge the VCC capacitor Cvcc. Before the VCC voltage reaches a certain value,

the amplitude of the current through the high voltage device is only determined by its channel resistance and

can be as high as several mA. After the VCC voltage is high enough, the controller controls the high voltage

device so that a constant current around 1mA is provided to charge the VCC capacitor further, until the VCC

voltage exceeds the turned-on threshold VVCCon. As shown as the time phase I in Figure 4, the VCC voltage

increase near linearly and the charging speed is independent of the mains voltage level.

Figure 4 VCC voltage at start up



The time taking for the VCC pre-charging can then be approximately calculated as:

ଵ=௏ೇ಴಴೚೙∙஼ೇ಴಴

ூ

ೇ಴಴೎೓ೌೝ೒೐మ

[1]

where IVCCcharge2 is the charging current from the startup cell which is 1.05mA, typically.

When the VCC voltage exceeds the VCC turned-on threshold VVCCon at time t1, the startup cell is switched off

and the IC begins to operate with soft-start. Due to power consumption of the IC and the fact that there is still no

energy from the auxiliary winding to charge the VCC capacitor before the output voltage is built up, the VCC

voltage drops (Phase II). Once the output voltage is high enough, the VCC capacitor receives the energy from

the auxiliary winding from the time point t2onward. The VCC then will reach a constant value depending on

output load.

3.2 Soft-start

As shown in Figure 5, at the time ton, the IC begins to operate with a soft-start. By this soft-start the switching

stresses for the switch, diode and transformer are minimized. The soft-start implemented in CoolSETTM-Q1 is a

digital time-based function. The preset soft-start time is tSS (12ms)with 4 steps. If not limited by other functions,

the peak voltage on CS pin will increase step by step from 0.32V to 1V finally.

CoolSET™Q1

ICE2QR2280G-1

Functional Description

Data Sheet 10 V2.2, 2014-07-10

Figure 5 Maximum current sense voltage during soft start

3.3 Normal Operation

The PWM controller during normal operation consists of a digital signal processing circuit including an up/down

counter, a zero-crossing counter (ZC counter) and a comparator, and an analog circuit including a current

measurement unit and a comparator. The switch-on and -off time points are each determined by the digital

circuit and the analog circuit, respectively. As input information for the switch-on determination, the zero-

crossing input signal and the value of the up/down counter are needed, while the feedback signal VFB and the

current sensing signal VCS are necessary for the switch-off determination. Details about the full operation of the

PWM controller in normal operation are illustrated in the following paragraphs.

3.3.1 Digital Frequency Reduction

As mentioned above, the digital signal processing circuit consists of an up/down counter, a ZC counter and a

comparator. These three parts are key to implement digital frequency reduction with decreasing load. In

addition, a ringing suppression time controller is implemented to avoid mis-triggering by the high frequency

oscillation, when the output voltage is very low under conditions such as soft start period or output short circuit.

Functionality of these parts is described as in the following.

3.3.1.1 Up/down counter

The up/down counter stores the number of the zero crossing where the main power switch is switched on after

demagnetization of the transformer. This value is fixed according to the feedback voltage, VFB, which contains

information about the output power. Indeed, in a typical peak current mode control, a high output power results

in a high feedback voltage, and a low output power leads to a low regulation voltage. Hence, according to VFB,

the value in the up/down counter is changed to vary the power MOSFET off-time according to the output power.

In the following, the variation of the up/down counter value according to the feedback voltage is explained.

The feedback voltage VFB is internally compared with three threshold voltages VFBZL, VFBZH and VFBR1, at each

clock period of 48ms. The up/down counter counts then upward, keep unchanged or count downward, as shown

in Table 2.

Table 2 Operation of the up/down counter

VFB up/down counter action

Always lower than VFBZL Count upwards till 7

Once higher than VFBZL, but always lower than VFBZH Stop counting, no value changing

Once higher than VFBZH, but always lower than VFBR1 Count downwards till 1

Once higher than VFBR1 Set up/down counter to 1

CoolSET™Q1

ICE2QR2280G-1

Functional Description

Data Sheet 11 V2.2, 2014-07-10

In the COOLSETTM-Q1, the number of zero crossing is limited to 7. Therefore, the counter varies between 1 and

7, and any attempt beyond this range is ignored. When VFB exceeds VFBR1 voltage, the up/down counter is reset

to 1, in order to allow the system to react rapidly to a sudden load increase. The up/down counter value is also

reset to 1 at the start-up time, to ensure an efficient maximum load start up. Figure 6 shows some examples on

how up/down counter is changed according to the feedback voltage over time.

The use of two different thresholds VFBZL and VFBZH to count upward or downward is to prevent frequency

jittering when the feedback voltage is close to the threshold point. However, for a stable operation, these two

thresholds must not be affected by the foldback current limitation (see section 3.4.1), which limits the VCS

voltage. Hence, to prevent such situation, the threshold voltages, VFBZL and VFBZH, are changed internally

depending on the line voltage levels.

Figure 6 Up/down counter operation

3.3.1.2 Zero crossing (ZC counter)

In the system, the voltage from the auxiliary winding is applied to the zero-crossing pin through a RC network,

which provides a time delay to the voltage from the auxiliary winding. Internally this pin is connected to a

clamping network, a zero-crossing detector, an output overvoltage detector and a ringing suppression time

controller.

During on-state of the power switch a negative voltage applies to the ZC pin. Through the internal clamping

network, the voltage at the pin is clamped to certain level.

The ZC counter has a minimum value of 0 and maximum value of 7. After the internal MOSFET is turned off,

every time when the falling voltage ramp of on ZC pin crosses the VZCCT (100mV) threshold, a zero crossing is

detected and ZC counter will increase by 1. It is reset every time after the DRIVER output is changed to high.

The voltage VZC is also used for the output overvoltage protection. Once the voltage at this pin is higher than the

threshold VZCOVP during off-time of the main switch, the IC is latched off after a fixed blanking time.

To achieve the switch-on at voltage valley, the voltage from the auxiliary winding is fed to a time delay network

(the RC network consists of Dzc, Rzc1, Rzc2 and Czc as shown in Figure 1) before it is applied to the zero-crossing

detector through the ZC pin. The needed time delay to the main oscillation signal Δtshould be approximately

one fourth of the oscillation period, Tosc (by transformer primary inductor and drain-source capacitor) minus the

propagation delay from the detected zero-crossing to the switch-on of the main switch tdelay.

CoolSET™Q1

ICE2QR2280G-1

Functional Description

Data Sheet 12 V2.2, 2014-07-10

∆ݐ=ܶ

௢௦௖

4−ݐ

ௗ௘௟௔௬ [2]

This time delay should be matched by adjusting the time constant of the RC network which is calculated as:

௧ௗ =ܥ

௭௖ ∙ܴ௭௖ଵ ∙ܴ௭௖ଶ

ܴ௭௖ଵ +ܴ௭௖ଶ

[3]

3.3.2 Ringing suppression time

After MOSFET is turned off, there will be some oscillation on VDS, which will also appear on the voltage on ZC

pin. To avoid mis-triggering by such oscillations to turn on the MOSFET, a ringing suppression timer is

implemented. This suppression time is depended on the voltage VZC. If the voltage VZC is lower than the

threshold VZCRS, a longer preset time tZCRS2 is applied. However, if the voltage VZC is higher than the threshold, a

shorter time tZCRS1 is set.

3.3.2.1 Switch on determination

After the gate drive goes to low, it cannot be changed to high during ring suppression time.

After ring suppression time, the gate drive can be turned on when the ZC counter value is higher or equal to

up/down counter value.

However, it is also possible that the oscillation between primary inductor and drain-source capacitor damps very

fast and IC cannot detect enough zero crossings and ZC counter value will not be high enough to turn on the

gate drive. In this case, a maximum off time is implemented. After gate drive has been remained off for the

period of TOffMax, the gate drive will be turned on again regardless of the counter values and VZC. This function

can effectively prevent the switching frequency from going lower than 20kHz. Otherwise it will cause audible

noise during start up.

3.3.3 Switch Off Determination

In the converter system, the primary current is sensed by an external shunt resistor, which is connected

between low-side terminal of the main power switch and the common ground. The sensed voltage across the

shunt resistor VCS is applied to an internal current measurement unit, and its output voltage V1is compared with

the regulation voltage VFB. Once the voltage V1exceeds the voltage VFB, the output flip-flop is reset. As a result,

the main power switch is switched off. The relationship between the V1and the VCS is described by:

ଵ=ܩ௉ௐ ெ ∙ܸ

஼ௌ +ܸ

௉ௐ ெ [4]

To avoid mis-triggering caused by the voltage spike across the shunt resistor at the turn on of the main power

switch, a leading edge blanking time, tLEB, is applied to the output of the comparator. In other words, once the

gate drive is turned on, the minimum on time of the gate drive is the leading edge blanking time.

In addition, there is a maximum on time, tOnMax, limitation implemented in the IC. Once the gate drive has been

in high state longer than the maximum on time, it will be turned off to prevent the switching frequency from going

too low because of long on time.

3.4 Current Limitation

There is a cycle by cycle current limitation realized by the current limit comparator to provide an over-current

detection. The source current of the MOSFET is sensed via a sense resistor RCS. By means of RCS the source

current is transformed to a sense voltage VCS which is fed into the pin CS. If the voltage VCS exceeds an internal

voltage limit, adjusted according to the Mains voltage, the comparator immediately turns off the gate drive.

To prevent the Current Limitation process from distortions caused by leading edge spikes, a Leading Edge

Blanking time (tLEB) is integrated in the current sensing path.

CoolSET™Q1

ICE2QR2280G-1

Functional Description

Data Sheet 13 V2.2, 2014-07-10

A further comparator is implemented to detect dangerous current levels (VCSSW) which could occur if one or

more transformer windings are shorted or if the secondary diode is shorted. To avoid an accidental latch off, a

spike blanking time of tCSSW is integrated in the output path of the comparator.

3.4.1 Foldback Point Correction

When the main bus voltage increases, the switch on time becomes shorter and therefore the operating

frequency is also increased. As a result, for a constant primary current limit, the maximum possible output

power is increased which is beyond the converter design limit.

To avoid such a situation, the internal foldback point correction circuit varies the VCS voltage limit according to

the bus voltage. This means the VCS will be decreased when the bus voltage increases. To keep a constant

maximum input power of the converter, the required maximum VCS versus various input bus voltage can be

calculated, which is shown in Figure 7.

Figure 7 Variation of the VCS limit voltage according to the IZC current

According to the typical application circuit, when MOSFET is turned on, a negative voltage proportional to bus

voltage will be coupled to auxiliary winding. Inside CoolSETTM Q1, an internal circuit will clamp the voltage on

ZC pin to nearly 0V. As a result, the current flowing out from ZC pin can be calculated as

௓஼ =ܸ

஻௎ௌ ∙ܰ௔

ܴ௓஼ଵ ∙ܰ௣

[5]

When this current is higher than IZC_FS, the amount of current exceeding this threshold is used to generate an

offset to decrease the maximum limit on VCS. Since the ideal curve shown in Figure 7 is a nonlinear one, a

digital block in CoolSETTM Q1 is implemented to get a better control of maximum output power. Additional

advantage to use digital circuit is the production tolerance is smaller compared to analog solutions. The typical

maximum limit on VCS versus the ZC current is shown in Figure 8 8.

CoolSET™Q1

ICE2QR2280G-1

Functional Description

Data Sheet 14 V2.2, 2014-07-10

Figure 8 VCS-max versus IZC

3.5 Active Burst Mode Operation

At light load condition, the IC enters Active Burst Mode operation to minimize the power consumption. Details

about Active Burst Mode operation are explained in the following paragraphs.

3.5.1 Entering Active Burst Mode Operation

For determination of entering Active Burst Mode operation, three conditions apply:

the feedback voltage is lower than the threshold of VFBEB (1.25V). Accordingly, the peak current sense

voltage across the shunt resistor is 0.17V;

the up/down counter is NZC_ABM (7) and

a certain blanking time tBEB (24ms).

Once all of these conditions are fulfilled, the Active Burst Mode flip-flop is set and the controller enters Active

Burst Mode operation. This multi-condition determination for entering Active Burst Mode operation prevents mis-

triggering of entering Active Burst Mode operation, so that the controller enters Active Burst Mode operation

only when the output power is really low during the preset blanking time.

3.5.2 During Active Burst Mode Operation

After entering the Active Burst Mode the feedback voltage rises as VOUT starts to decrease due to the inactive

PWM section. One comparator observes the feedback signal if the voltage level VFBBOn (3.6V) is exceeded. In

that case the internal circuit is again activated by the internal bias to start with switching.

Turn-on of the power MOSFET is triggered by the timer. The PWM generator for Active Burst Mode operation

composes of a timer with a fixed frequency of fsB (52kHz, typical) and an analog comparator. Turn-off is resulted

if the voltage across the shunt resistor at CS pin hits the threshold VcsB (0.34V). A turn-off can also be triggered

if the duty ratio exceeds the maximal duty ratio DmaxB (50%). In operation, the output flip-flop will be reset by one

of these signals which come first.

If the output load is still low, the feedback signal decreases as the PWM section is operating. When feedback

signal reaches the low threshold VFBBOff (3.0V), the internal bias is reset again and the PWM section is disabled

until next time regulation signal increases beyond the VFBBOn (3.6V) threshold. If working in Active Burst Mode

the feedback signal is changing like a saw tooth between VFBBOff and VFBBOn shown in Figure 9.

3.5.3 Leaving Active Burst Mode Operation

The feedback voltage immediately increases if there is a high load jump. This is observed by a comparator. As

the current limit is 34% during Active Burst Mode a certain load is needed so that feedback voltage can exceed

VFBLB (4.5V). After leaving active burst mode, maximum current can now be provided to stabilize VO. In addition,

CoolSET™Q1

ICE2QR2280G-1

Functional Description

Data Sheet 15 V2.2, 2014-07-10

the up/down counter will be set to 1 immediately after leaving Active Burst Mode. This is helpful to decrease the

output voltage undershoot.

Figure 9 Signals in Active Burst Mode

3.6 Protection Functions

The IC provides full protection functions. The following table summarizes these protection functions.

Table 3 Protection features

VCC Over-voltage Auto Restart Mode

VCC Under-voltage Auto Restart Mode

Over-load/Open Loop Auto Restart Mode

Over-temperature Auto Restart Mode

Output Over-voltage Latched Off Mode

Short Winding Latched Off Mode

During operation, the VCC voltage is continuously monitored. In case of an under-voltage or an over-voltage,

the IC is reset and the main power switch is then kept off. After the VCC voltage falls below the threshold

CoolSET™Q1

ICE2QR2280G-1

Functional Description

Data Sheet 16 V2.2, 2014-07-10

VVCCoff, the startup cell is activated. The VCC capacitor is then charged up. Once the voltage exceeds the

threshold VVCCon, the IC begins to operate with a new soft-start.

In case of open control loop or output over load, the feedback voltage will be pulled up. After a blanking time of

tOLP_B (30ms), the IC enters auto-restart mode. The blanking time here enables the converter to provide a peak

power in case the increase in VFB is due to a sudden load increase. This output over load protection is disabled

during burst mode.

During off-time of the power switch, the voltage at the zero-crossing pin is monitored for output over-voltage

detection. If the voltage is higher than the preset threshold VZCOVP, the IC is latched off after the preset blanking

time tZCOVP. This latch off mode can only be reset if the Vcc < VVCCPD.

If the junction temperature of IC controller exceeds TjCon (130 °C), the IC enters into OTP auto restart mode.

This OTP is disabled during burst mode.

If the voltage at the current sensing pin is higher than the preset threshold VCSSW during on-time of the power

switch, the IC is latched off. This is short-winding protection. The short winding protection is disabled during

burst mode.

During latch-off protection mode, the VCC voltage drops to VVCCoff (10.5V) and then the startup cell is activated.

The VCC voltage is then charged to VVCCon (18V). The startup cell is shut down again. This action repeats again

and again.

There is also a maximum on time limitation implemented inside the CoolSETTM Q1. Once the gate voltage is

high and longer than tOnMax, the switch is turned off immediately.

CoolSET™Q1

ICE2QR2280G-1

Electrical Characteristics

Data Sheet 17 V2.2, 2014-07-10

4 Electrical Characteristics

Note : All voltages are measured with respect to ground (Pin 12). The voltage levels are valid if other

ratings are not violated.

4.1 Absolute Maximum Ratings

Note : Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of

the integrated circuit. For the same reason it needs to make sure that any capacitor that will be connected

to pin 11 (VCC) is discharged before assembling the application circuit.

Parameter Symbol

Limit Values

Unit Remarks

min.

max.

Drain Source Voltage V

- 800 V T

=25°C

Pulse drain current, tplimited by Tjmax ID_Puls - 4.9 A

Avalanche energy, repetitive tAR limited

by max. T

=150°C1EAR - 0.047 mJ

Avalanche current, repetitive tAR

limited by max. T

=150°C1IAR - 1.5 A

VCC Supply Voltage

VVCC -0.3 27 V

FB Voltage V

-0.3 5.5 V

ZC Voltage V

-0.3 5.5 V

CS Voltage V

-0.3 5.5 V

Current out from ZC pin I

ZCMAX

- 3 mA

Junction Temperature Tj-40 150 °C Controller &

CoolMOSTM

Storage Temperature T

-55 150 °C

Thermal Resistance

Junction -Ambient RthJA - 85 K/W With 232mm

2oz

copper area on drain

pin, T

=25ºC

Thermal Resistance

Junction -Drain RthJl - 20 K/W With 232mm

2oz

copper area on drain

pin, T

=25ºC

ESD Capability (incl. Drain Pin) VESD - 2 kV Human body model2

4.2 Operating Range

Note : Within the operating range the IC operates as described in the functional description.

Parameter Symbol

Limit Values

Unit Remarks

min.

max.

1Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f

2According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kΩ series resistor)

CoolSET™Q1

ICE2QR2280G-1

Electrical Characteristics

Data Sheet 18 V2.2, 2014-07-10

VCC Supply Voltage

VVCC VVCCoff VVCCOVP V

Junction Temperature of

Controller TjCon -40 130 °C Limited by over temperature

protection

Junction Temperature of

CoolMOSTM TjCoolMOS -40 150 C

4.3 Characteristics

4.3.1 Supply Section

Note : The electrical characteristics involve the spread of values within the specified supply voltage and junction

temperature range Tjfrom – 40 °C to 125 °C. Typical values represent the median values, which are

related to 25°C. If not otherwise stated, a supply voltage of VCC = 18 V is assumed.

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

Start Up Current IVCCstart - 300 550 μA VVCC =VVCCon -0.2V

VCC Charge Current

IVCCcharge1 - 1.22 5.0 mA VVCC = 0V

IVCCcharge2 0.8 1.1 - mA VVCC = 1V

IVCCcharge3 - 1 - mA VVCC =VVCCon -0.2V

Maximum Input Current of

Startup Cell and CoolMOSTM IDrainIn - - 2 mA VVCC =VVCCon -0.2V

Leakage Current of

Startup Cell and CoolMOSTM IDrainLeak - 0.2 50 μA VDrain = 600V

at T

=100°C

Supply Current in normal

operation IVCCNM - 1.5 2.3 mA IFB = 0A

Supply Current in

Auto Restart Mode with Inactive

Gate IVCCAR - 300 - μA IFB = 0A

Supply Current in Latch-off

Mode IVCClatch - 300 - μA IFB = 0A

Supply Current in Burst Mode

with inactive Gate

IVCCburst - 500 950 μA VFB = 2.5V, exclude

the current flowing out

from FB pin

VCC Turn

-On Threshold VVCCon 17.0 18.0 19.0 V

VCC Turn

-Off Threshold VVCCoff 9.2 9.85 10.5 V

VCC

Turn-On/Off Hysteresis VVCChys - 8.15 - V

4.3.2 Internal Voltage Reference

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

CoolSET™Q1

ICE2QR2280G-1

Electrical Characteristics

Data Sheet 19 V2.2, 2014-07-10

Internal Reference Voltage VREF 4.80 5.00 5.20 V Measured at pin FB

4.3.3 PWM Section

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

Feedback Pull-Up Resistor R

14 23 33 kΩ

PWM-OP Gain G

PWM

3.18 3.3 - -

Offset for Voltage Ramp V

PWM

0.6 0.7 - V

Maximum on time in normal

operation tOnMax 22 30 41 μs

4.3.4 Current Sense

Parameter Symbol

Limit Values

Unit Test Condition

min.

typ.

max.

Peak current limitation in

normal operation VCSth 0.97 1.03 1.09 V

Leading Edge Blanking time t

LEB

200 330 460 ns

Peak Current Limitation in

Active Burst Mode VCSB 0.29 0.34 0.39 V

4.3.5 Soft Start

Parameter Symbol

Limit Values

Unit Test Condition

min.

typ.

max.

Soft-Start time t

8.5 12 - ms

soft-start time step t

SS_S

- 3 - ms

Internal regulation voltage

at first step VSS11- 1.76 - V

Internal regulation voltage

step at soft start VSS_S1- 0.56 - V

4.3.6 Foldback Point Correction

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

ZC current first step threshold I

ZC_FS

0.35 0.5 0.621 mA

ZC current last step threshold I

ZC_LS

1.3 1.7 2.2 mA

CS threshold minimum V

CSMF

- 0.66 - V I

=2.2mA, V

=3.8V

1The parameter is not subjected to production test - verified by design/characterization

CoolSET™Q1

ICE2QR2280G-1

Electrical Characteristics

Data Sheet 20 V2.2, 2014-07-10

4.3.7 Digital Zero Crossing

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

Zero crossing threshold

voltage VZCCT 50 100 170 mV

Ringing suppression threshold V

ZCRS

- 0.7 - V

Minimum ringing suppression

time tZCRS1 1.62 2.5 4.5 μs VZC > VZCRS

Maximum ringing suppression

time tZCRS2 - 25 - μs VZC < VZCRS

Threshold to set Up/Down

Counter to one VFBR1 - 3.9 - V

Threshold for downward

counting at low line VFBZHL - 3.2 - V

Threshold for upward counting

at low line VFBZLL - 2.5 - V

Threshold for downward

counting at high line VFBZHH - 2.9 - V

Threshold for upward counting

at high line VFBZLH - 2.3 - V

ZC current for IC switch

threshold to high line IZCSH - 1.3 - mA

ZC current for IC switch

threshold to low line IZCSL - 0.8 - mA

Counter time

tCOUNT - 48 - ms

Maximum restart time in

normal operation tOffMax 30 42 57.5 μs

4.3.8 Active Burst Mode

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

Feedback voltage for entering

Active Burst Mode VFBEB - 1.25 - V

Minimum Up/down value for

entering Active Burst Mode NZC_ABM - 7 -

Blanking time for entering

Active Burst Mode tBEB - 24 - ms

Feedback voltage for leaving

Active Burst Mode VFBLB - 4.5 - V

Feedback voltage for burst-on V

FBBOn

- 3.6 - V

Feedback voltage for burst-off V

FBBOff

- 3.0 - V

1The parameter is not subjected to production test - verified by design/characterization

CoolSET™Q1

ICE2QR2280G-1

Electrical Characteristics

Data Sheet 21 V2.2, 2014-07-10

Fixed Switching Frequency in

Active Burst Mode fsB 39 52 65 kHz

Max. Duty Cycle in Active

Burst Mode DmaxB - 0.5 -

4.3.9 Protection

Parameter Symbol

Limit Values

Unit Test Condition

min.

typ.

max.

VCC overvoltage threshold

VCCOVP

24.0 25.0 26.0 V

Over Load or Open Loop

Detection threshold for OLP

protection at FB pin VFBOLP - 4.5 - V

Over Load or Open Loop

Protection Blanking Time tOLP_B 20 30 44 ms

Output Overvoltage detection

threshold at the ZC pin VZCOVP 3.55 3.7 3.84 V

Blanking time for Output

Overvoltage protection tZCOVP - 100 - μs

Threshold for short winding

protection VCSSW 1.63 1.68 1.78 V

Blanking time for short-winding

protection tCSSW - 190 - ns

Over temperature protection

jCon

130 140 150 °C

Power Down Reset threshold

for Latched Mode VVCCPD 5.2 - 7.8 V After Latched Off

Mode is entered

Note : The trend of all the voltage levels in the Control Unit is the same regarding the deviation except

VVCCOVP &VVCCPD.

4.3.10 CoolMOSTM Section

Parameter Symbol

Limit Values

Unit Test Condition

min.

typ.

max.

Drain Source Breakdown

Voltage

V(BR)DSS 800

870 -

-V

VTj= 25°C

= 110°C

Drain Source On-Resistance RDSon

2.26

5.02

6.14

2.62

5.81

7.10

Tj= 25°C

Tj=125°C1

Tj=150°C1

at I

= 0.81A

Effective output capacitance,

energy related Co(er) - 16.31-pF VDS = 0V to 480V

Rise Time t

rise

- 30

- ns

Fall Time t

fall

- 30

- ns

1The parameter is not subjected to production test - verified by design/characterization

2Measured in a Typical Flyback Converter Application

CoolSET™Q1

ICE2QR2280G-1

Electrical Characteristics

Data Sheet 22 V2.2, 2014-07-10

5Typical CoolMOSTM Performance Characteristic

Figure 10 Safe Operating Area (SOA) curve for ICE2QR2280G-1

Figure 11 Power dissipation; Ptot=f(Ta)

CoolSET™Q1

ICE2QR2280G-1

Electrical Characteristics

Data Sheet 23 V2.2, 2014-07-10

Figure 12 Drain-source breakdown voltage; VBR(DSS)=f(Tj), ID=0.25mA

CoolSET™Q1

ICE2QR2280G-1

Input power curve

Data Sheet 24 V2.2, 2014-07-10

6 Input power curve

Two input power curves gives typical input power versus ambient temperature are showed below;

Vin=85~265Vac (Figure 13) and Vin=230Vac (Figure 14). The curves are derived based on a typical

discontinuous mode flyback model which considers 150V maximum secondary to primary reflected voltage

(high priority). The calculation is based on 232mm2copper area as heatsink for the device. The input power

already includes power loss at input common mode choke and bridge rectifier and the CoolMOSTM. The device

saturation current (ID_plus@Tj=125°C) is also considered.

To estimate the out power of the device, it is simply multiplying the input power at a particular ambient

temperature with the estimated efficiency for the application. For example, a wide range input voltage (Figure

13), operating temperature is 50 °C, estimated efficiency is 80%,the output power is 24W (30W*0.8).

Figure 13 Input Power curve Vin=85~265Vac; Pin=f(Ta)

Figure 14 Input Power curve Vin=230Vac; Pin=f(Ta)

CoolSET™Q1

ICE2QR2280G-1

Outline Dimension

Data Sheet 25 V2.2, 2014-07-10

7 Outline Dimension

Figure 15 PG-DSO-16/12 (Pb-free lead plating Plastic Dual Small Outline Package)

CoolSET™Q1

ICE2QR2280G-1

Marking

Data Sheet 26 V2.2, 2014-07-10

8 Marking

Figure 16 Marking for ICE2QR2280G-1

w w w . i n f i n e o n . c o m

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