PD - 95376A IRFR9N20DPbF IRFU9N20DPbF SMPS MOSFET HEXFET(R) Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS 200V RDS(on) max ID 0.38 9.4A l D-Pak IRFR9N20D I-Pak IRFU9N20D Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 9.4 6.7 38 86 0.57 30 5.0 -55 to + 175 Units A W W/C V V/ns C 300 (1.6mm from case ) Typical SMPS Topologies l Telecom 48V input Forward Converter Notes through are on page 10 www.irf.com 1 12/06/04 IRFR/U9N20DPbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 200 --- --- V VGS = 0V, ID = 250A --- 0.23 --- V/C Reference to 25C, ID = 1mA --- --- 0.38 VGS = 10V, ID = 5.6A 3.0 --- 5.5 V VDS = VGS, ID = 250A --- --- 25 VDS = 200V, VGS = 0V A --- --- 250 VDS = 160V, VGS = 0V, TJ = 150C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 4.3 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 18 4.7 9.0 7.5 16 13 9.3 560 97 29 670 40 74 Max. Units Conditions --- S VDS = 50V, ID = 5.6A 27 ID = 5.6A 7.1 nC VDS = 160V 14 VGS = 10V, --- VDD = 100V --- ID = 5.6A ns --- RG = 11 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, V DS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 160V, = 1.0MHz --- VGS = 0V, VDS = 0V to 160V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 100 5.6 8.6 mJ A mJ Typ. Max. Units --- --- --- 1.75 50 110 C/W Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 9.4 showing the A G integral reverse --- --- 38 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 5.6A, VGS = 0V --- 130 --- ns TJ = 25C, I F = 5.6A --- 560 --- nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFR/U9N20DPbF 100 100 VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 1 5.5V 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 10 5.5V 1 0.1 0.1 100 VDS , Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.0 TJ = 175 C TJ = 25 C 1 V DS = 50V 20s PULSE WIDTH 4 6 8 10 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 0.1 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 20s PULSE WIDTH TJ = 175 C 12 ID = 9.4A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR/U9N20DPbF 20 10000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd C, Capacitance(pF) Coss = Cds + Cgd 1000 Ciss 100 Coss Crss ID = 5.6A VDS = 160V VDS = 100V VDS = 40V 16 12 8 4 10 1 10 100 FOR TEST CIRCUIT SEE FIGURE 13 1000 0 VDS , Drain-to-Source Voltage (V) 0 5 10 15 20 25 30 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 ID , Drain Current (A) ISD , Reverse Drain Current (A) 100 10 TJ = 175 C 1 10 100us 1ms 1 10ms TJ = 25 C 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10us 1.4 TC = 25 C TJ = 175 C Single Pulse 0.1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR/U9N20DPbF 10.0 V DS VGS ID , Drain Current (A) 8.0 RD D.U.T. RG + -VDD VGS 6.0 Pulse Width 1 s Duty Factor 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS , Single Pulse Avalanche Energy (mJ) IRFR/U9N20DPbF 200 TOP 160 BOTTOM 120 80 40 0 25 tp ID 2.3A 4.0A 5.6A 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50K 12V .2F .3F QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFR/U9N20DPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D.U.T + - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFR/U9N20DPbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" PART NUMBER INTERNAT IONAL RECT IF IER LOGO Note: "P" in ass embly line pos ition indicates "Lead-F ree" IRFU120 12 916A 34 ASS EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INT ERNAT IONAL RECTIF IER LOGO IRFU120 12 AS SEMBLY LOT CODE 8 34 DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS SEMBLY S ITE CODE www.irf.com IRFR/U9N20DPbF I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRFU120 WIT H ASSEMBLY LOT CODE 5678 ASSE MBLED ON WW 19, 1999 IN T HE ASSE MBLY LINE "A" PART NUMBER INT ERNAT IONAL RECTIF IER LOGO IRFU120 919A 56 78 AS SEMBLY LOT CODE Note: "P" in as s embly line position indicates "Lead-F ree" DAT E CODE YEAR 9 = 1999 WEE K 19 LINE A OR INT ERNAT IONAL RECT IF IER LOGO PART NUMBER IRF U120 56 ASS EMBLY LOT CODE www.irf.com 78 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = ASS EMBLY S ITE CODE 9 IRFR/U9N20DPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 6.4mH RG = 25, IAS = 5.6A. Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ISD 5.6A, di/dt 110A/s, VDD V(BR)DSS, TJ 175C * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/