12 (C1) 3 2 1 2-O 5.5 12 3 3-M5 5(E1) 4(G1) 23 23 7 16 7 17 4-fasten tab #110 t= 0.5 16 23 LABEL 6 .0 30 +1 - 0 .5 8 16 4 5 4 35 (E2) 2 94 80 0 .2 5 12 11 12 (C2E1) 1 11 Dimension:mm ollector-mitter oltage ate-mitter oltage ollector ower issipation unction emperature ange torage emperature ange ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal , . (kgfcm) ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 1200V,= 0V . = 20V,= 0V . ollector-mitter aturation oltage = 100A,= 15V . . ate-mitter hreshold oltage = 5V,= 100mA . . nput apacitance witching ime ise urn-on all urn-off ime ime ime ime eak orward oltage everse ecovery ime = 10V,= 0V,= 1MH 8,300 = 600V L= 6 G= 10 = 15V . . . . . . . . orward urrent . . . = 100A,= 0V . . = 100A,= -10V i/t= 200A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case http://store.iiic.cc/ Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25 200 VGE=20V IC=50A Collector to Emitter Voltage V CE (V) 15V Collector Current I C (A) 150 9V 100 8V 50 7V 0 0 2 TC=25 16 10V 12V 4 6 8 14 100A 12 10 8 6 4 2 0 10 0 4 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 12 10 8 6 4 2 8 12 16 R L=6 TC=25 16 700 14 600 12 500 10 400 8 V CE=600V 300 6 400V 200 4 200V 100 2 0 20 0 0 150 300 Gate to Emitter Voltage VGE (V) 450 600 750 Total Gate Charge Qg (nC) Fig.6- Collector Current vs. Switching Time (Typical) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 1.6 20000 VGE=0V f=1MHZ TC=25 10000 Cies 5000 2000 Coes 1000 500 VCC=600V RG=10 VGE=15V TC=25 1.4 1.2 Switching Time t (s) 50000 Capacitance C (pF) 20 tOFF 1 0.8 tf 0.6 0.4 200 Cres 100 50 0.1 0.2 0.5 1 2 5 10 20 50 100 200 tON tr 0.2 0 0 Collector to Emitter Voltage VCE (V) 25 50 Collector Current IC (A) http://store.iiic.cc/ 75 100 Gate to Emitter Voltage VGE (V) 100A 4 16 800 200A 14 0 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125 16 0 8 Gate to Emitter Voltage VGE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) IC=50A 200A Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) (Typical) 10 VCC=600V IC=100A VGE=15V TC=25 TC=25 TC=125 toff ton 2 Forward Current I F (A) 5 Switching Time t (s) 200 tr 1 tf 0.5 0.2 150 100 50 0.1 0.05 5 10 20 50 100 0 200 0 1 2 Fig.9- Reverse Recovery Characteristics (Typical) Fig.10- Reverse Bias Safe Operating Area I F=100A TC=25 200 trr 100 200 Collector Current I C (A) 100 50 20 10 5 4 500 I RrM R G=10 V GE=15V TC125 50 20 10 5 2 1 0.5 2 0.2 100 200 300 400 500 0.1 600 0 400 800 Fig.11- Transient Thermal Impedance 1 5x10 -1 2x10 -1 FRD IGBT 1x10 -1 5x10 -2 2x10 -2 1x10 -2 TC=25 5x10 -3 1 Shot Pulse 2x10 -3 10 -5 1200 Collector to Emitter Voltage V CE (V) -di/dt (A/s) (/W) 0 (J-C) 1 Transient Thermal Impedance Rth Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 500 3 Forward Voltage V F (V) Series Gate Impedance RG () 10 -4 10 -3 10 -2 10 -1 Time t (s) http://store.iiic.cc/ 1 10 1 1600