821 13 TKIM TC-00002980/711 12 TKIM/N1109PE TKIM/90503 TSIM TA-3722 No.7370-1/6
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
August, 2013
CPH5617
N-Channel Power MOSFET
30V, 150mA, 3.7Ω, Dual CPH5
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Ordering number : EN7370C
Features
• Low ON-resistance
• Ultrahigh-speed switching
• 1.5V drive
• Composite type with 2 MOSFETs contained in the one package, improving the mounting effi ciency greatly
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS ±10 V
Drain Current (DC) ID150 mA
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 600 mA
Allowable Power Dissipation PD0.25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Package Dimensions
unit : mm (typ)
7017A-004
Product & Package Information
• Package : CPH5
• JEITA, JEDEC : SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL Marking
Electrical Connection
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
CPH5
21
453
2.9
0.05
0.4
2.8
1.6
0.2
0.6 0.6
0.9
0.2
0.15
0.95
CPH5617-TL-E
TL
FZ
LOT No.
543
12
CPH5617
No.7370-2/6
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS V
DS=30V, VGS=0V 10 μA
Gate to Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=100μA0.4 1.3 V
Forward T ransfer Admittance | yfs |VDS=10V, ID=80mA 0.15 0.22 S
Static Drain to Source On-State Resistance
RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω
RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω
RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Ω
Input Capacitance Ciss VDS=10V, f=1MHz 7.0 pF
Output Capacitance Coss 5.9 pF
Reverse Transfer Capacitance Crss 2.3 pF
Turn-ON Delay Time td(on)
See specifi ed Test Circuit.
19 ns
Rise Time tr 65 ns
Turn-OFF Delay Time td(off) 155 ns
Fall Time tf120 ns
Total Gate Charge Qg VDS=10V, VGS=10V, ID=150mA 1.58 nC
Gate to Source Charge Qgs 0.26 nC
Gate to Drain “Miller” Charge Qgd 0.31 nC
Diode Forward Voltage VSD IS=150mA, VGS=0V 0.87 1.2 V
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
CPH5617-TL-E CPH5 3,000pcs./reel Pb Free
PW=10μs
D.C.≤1%
4V
0V
VIN
P.G 50Ω
G
S
ID=80mA
RL=187.5Ω
VDD=15V
VOUT
VIN
D
CPH5617
CPH5617
No.7370-3/6
0
0
0.02
0.2
0.06
0.04
0.08
0.4
0.10
0.12
0.14
0.16
0.6 0.8 1.0
VGS=1.5V
2.0V
2.5V
4.0V
3.5V
3.0V
6.0V
0
0
12
1
34
2
56
3
4
5
6
7
8
9
10
78910
Ta=25°C
0.01 0.1
23 57 23 5
10
7
5
3
2
1.0
0
0
0.5 1.0 1.5 2.0
0.15
0.10
0.05
0.30
0.25
0.20
2.5 3.0
VDS=10V
Ta= --25°C
25
°
C
75°C
25°C
--25°C
Ta=75°C
IT00029 IT00030
IT00031 IT00032
VGS=4V
ID=40mA
80mA
ID -- V DS ID -- V GS
RDS(on) -- VGS RDS(on) -- ID
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Drain to Source Voltage, VDS -- V
Drain Current, ID -- A
Gate to Source Voltage, VGS -- V
Drain Current, ID -- A
Gate to Source Voltage, VGS -- V Drain Current, ID -- A
0.01 0.1
23 57 23 5
10
1.0
7
5
3
2
VGS=2.5V
0.001
1.0
0.01
23 57 23
100
10
7
5
3
2
7
5
3
2
VGS=1.5V
Ta=75°C
25°C
--25°C
--25°C
25°C
Ta=75°C
IT00033 IT00034
--60
0
--40 -- 20
1
020
2
40 60
3
4
5
6
7
80 100 120 140 160 0.01
0.01
0.1
23 57 23 5
0.1
7
5
3
2
7
5
3
2
1.0 VDS=10V
75°C
25°C
Ta= --25°C
IT00035 IT00036
yfs -- ID
Drain Current, ID -- A
Forward Transfer Admittance, yfs -- S
RDS(on) -- Ta
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Ambient Temperature, Ta -- °C
RDS(on) -- ID
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Drain Current, ID -- A
RDS(on) -- ID
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Drain Current, ID -- A
VGS=2.5V, ID=40mA
VGS=4.0V, ID=80mA
CPH5617
No.7370-4/6
0.01 0.60.5 0.80.7 0.9 1.0 1.1 1.2
0.1
5
3
2
7
5
3
2
VGS=0V
--25
°
C
25°C
Ta=75
°
C
IT00037
IS -- VSD
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
0.01
10 0.1
23 57 2
1000
100
7
5
3
2
7
5
3
2
VDD=15V
VGS=4V
td(on)
tr
tf
td(off)
IT00038
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
0 2 4 6 8 10 12 14 16 18 20
1.0
10
7
5
3
2
7
5
3
2
100
Ciss
Coss
Crss
f=1MHz
IT00039
Ciss, Coss, Crss -- VDS
Drain to Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
1
2
3
4
5
6
7
8
9
10 VDS=10V
ID=150mA
IT00040
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate to Source Voltage, VGS -- V
0 20 40 60 100 120 140
080
0.20
0.25
0.30
0.10
0.05
0.15
160
Amibient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IT01962
CPH5617
No.7370-5/6
Outline Drawing Land Pattern Example
CPH5617-TL-E
Mass (g) Unit
0.02
* For reference
mm Unit: mm
0.6
2.4 1.4
0.95 0.95
CPH5617
PS No.7370-6/6
Note on usage : Since the CPH5617 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf.
SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
