GaAs Infrared Emitting Diode
SE3450/5450
DESCRIPTION
FEATURES
TO-46 metal can package
•
Choice of flat window or lensed package
•
90¡ or 20¡ (nominal) beam angle option
•
935 nm wavelength
•
Wide operating temperature range
(-55¡C to +125¡C)
•
Mechanically and spectrally matched to
SD3421/5421 photodiode,
SD3443/5443/5491phototransistor,
SD3410/5410 photodarlington and SD5600
series Schmitt trigger
•
The SE3450/5450 series consists of a gallium arsenide
infrared emitting diode mounted in a TO-46 metal can
package. The SE3450 series has flat window cans
providing a wide beam angle, while the SE5450 series
has glass lensed cans providing a narrow beam angle.
The TO-46 packages offer high power dissipation
capability and are ideally suited for operation in hostile
environment.
INFRA-83.TIF
OUTLINE DIMENSIONS
in inches (mm)
Tolerance
2. ANODE
1. CATHODE (TAB)
LEADS:
.046(1.17)
.036(.91)
2
1
DIA.
(.460)
.018
MIN.
(12.70)
.500
(0.36)
.015
.140 (3.56)
.153 (3.89)
DIA.
.137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52) DIA.
DIA.
.208 (5.28)
.219 (5.56)
.100(2.54)DIA
NOM
45°
.048(1.22)
.028(.71)
(CASE)
DIM_003a.ds4
SE3450
.046(1.17)
.036(.91)
2
1
DIA.
(.460)
.018
MIN.
(12.70)
.500
(0.36)
.015
5.08
.200
DIA.
.137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52) DIA.
DIA.
.208 (5.28)
.219 (5.56)
.100(2.54)DIA
NOM
45°
.048(1.22)
.028(.71)
.224 (5.89)
.247 (6.27)
2.
ANODE
1. CATHODE (TAB)
LEADS:
(CASE)
DIM_003b.ds4
SE5450
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
24
GaAs Infrared Emitting Diode
SE3450/5450
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
100 mA
Power Dissipation
150 mW [À]
Operating Temperature Range
-55¡C to 125¡C
Storage Temperature Range
-65¡C to 150¡C
Soldering Temperature (10 sec)
260¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
1.43 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
25
GaAs Infrared Emitting Diode
SE3450/5450
Radiant Intensity vs
Angular Displacement (SE3450)
gra_017.ds4
Angular displacement - degrees
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Fig. 1 Radiant Intensity vs
Angular Displacement (SE5450)
gra_023.ds4
Angular displacement - degrees
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 2
Radiant Intensity vs
Forward Current
gra_018.ds4
Forward current - mA
Normalized radiant
intensity - %
0.0
50
100
150
200
250
0 100 200 300 400 500
Pulsed
Fig. 3 Forward Voltage vs
Forward Current
gra_205.ds4
Forward current - mA
Forward voltage - V
1.00
1.05
1.10
1.20
1.25
1.30
1.40
0 10 20 40 60 80 90 10050
1.15
1.35
30 70
Fig. 4
Forward Voltage vs
Temperature
gra_206.ds4
Temperature - °C
Forward voltage - V
1.20
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
-50 -25 0 25 50 75 100 125
IF = 100 mA
Fig. 5 Spectral Bandwidth
gra_005.ds4
Wavelength - nm
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
870 890 910 930 950 970 990 1010
Fig. 6
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
26
GaAs Infrared Emitting Diode
SE3450/5450
Coupling Characteristics
SE3450 with SD3443
gra_021.ds4
Window-to-window distance - inches
Normalized light
current
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.2 0.4 0.6 0.8 1.0
Fig. 7 Coupling Characteristics
SE5450 with SD5443
gra_024.ds4
Lens-to-lens distance - inches
Normalized light
current
0.0
0.2
0.4
0.6
0.8
1.0
0 2 4 6 7 9 1 3 5 8
Fig. 8
Radiant Intensity vs
Case Temperature
gra_022.ds4
Case temperature - °C
Normalized radiant intensity
0.1
0.2
0.3
0.4
0.5
1.0
2.0
3.0
4.0
5.0
-75 -50 -25 0 25 50 75 100 125
Normalized to
IF = 100 mA
TA = 25 °C
Fig. 9
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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