GaAsP photodiode
Diffusion type
Photodiode for visible light detection
www.hamamatsu.com 1
High stability
Low dark current
Features
Color identification
Analytical instrument
Applications
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type no.
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
Photosensitivity
S
(A/W) Short circuit
current
Isc
100 lx
Dark
current
ID
max.
Temp.
coeffi cient
of
ID
TCID
Rise time
tr
VR=0 V
RL=1 kΩ
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
Noise
equivalent
power
NEP
λp
GaP
LED
560 nm
He-Ne
laser
633 nm
(nm) (nm)
Min.
(μA)
Typ.
(μA)
VR=10 mV
(pA)
VR=1 V
(pA)
(times/°C)
(μs) (pF)
Min.
(GΩ)
Typ.
(GΩ) (W/Hz1/2)
G1115
300 to 680
640 0.3 0.29 0.29
0.12 0.15 1 10
1.07
1 300 10 80 1.5 × 10-15
G1116 0.45 0.6 2.5 25 4 1400 4 30 2.5 × 10-15
G1117 2 2.5 5 50 15 6000 2 15 3.5 × 10-15
G1118 0.12 0.15 1 10 1 300 10 80 1.5 × 10-15
G1120 2 2.5 5 50 15 6000 2 15 3.5 × 10-15
G3067 0.75 0.95 1 10 1 300 10 80 1.5 × 10-15
G2711-01 0.15 0.18 1 10 1 300 10 80 1.5 × 10-15
* Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating
Structure / Absolute maximum ratings
Type no.
Dimensional
outline/
Window
material*
Package
Photosensitive
area size
Effective
photosensitive
area
Absolute maximum ratings
Reverse
voltage
VR max
Operating
temperature
Topr
Storage
temperature
Tstg
(mm) (mm2) (V) (°C) (°C)
G1115 /K TO-18 1.3 × 1.3 1.66
5 -30 to +80 -40 to +85
G1116 /K TO-5 2.7 × 2.7 7.26
G1117 /K TO-8 5.6 × 5.6 29.3
G1118 /R Ceramic 1.3 × 1.3 1.66
G1120 /R Ceramic 5.6 × 5.6 29.3
G3067 /L TO-18 1.3 × 1.3 1.66
G2711-01 /R Plastic 1.3 × 1.3 1.66
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
GaAsP photodiode Diffusion type
Spectral response
Rise time vs. load resistance
Photosensitivity temperature characteristic
Dark current vs. reverse voltage
0
0.1
0.2
0.3
0.4
0.5
200 300 500400 600 700
Wavelength (nm)
Photosensitivity (A/W)
800
(Typ. Ta=25 °C)
Load resistance (Ω)
(Typ. Ta=25 °C, VR=0 V)
Rise time
103104
102
100 ns
1 µs
10 ms
1 ms
100 µs
10 µs
105106
G1116
G1117, G1120
G1115, G1118
G3067, G2711-01
Wavelength (nm)
(Typ.)
Temperature coefficient (%/°C)
400 500200 300
-0.5
0
+0.5
+1.5
+1.0
600 700 800
Reverse voltage(V)
(Typ. Ta=25 °C)
Dark current
0.01 0.10.001
100 fA
1 pA
1 nA
100 pA
10 pA
110
G1116
G1115, G1118
G2711-01, G3067
G1117, G1120
2
KGPDB0019EA KGPDB0020EA
KGPDB0021EA KGPDB0022EA
GaAsP photodiode Diffusion type
3
Shunt resistance vs. ambient temperature
Dimensional outline (unit: mm)
Short circuit current linearity
Ambient temperature (°C)
(Typ. VR=10 mV)
Shunt resistance
020-20
10 MΩ
1 GΩ
100 MΩ
10 TΩ
1 TΩ
100 GΩ
10 GΩ
40 60 80
G1116
G1115, G1118
G3067, G2711-01
G1117, G1120
Incident light level (W)
(Typ. Ta=25 °C, A light source fully illuminated)
Short circuit current (A)
10-14 10-12 10-10 10-8 10-6 10-4 10-2
10-16
10-16
10-12
10-14
100
10-2
10-4
10-6
10-8
10-10
100
RL=100 Ω
Refer to NEP value in characteristic table.
G1115 G1116
Borosilicate glass window may extend a
maximum of 0.1 mm beyond the upper
surface of the cap.
Connected
to case
14
2.4
3.55 ± 0.2
4.7 ± 0.1
5.4 ± 0.2
2.54 ± 0.2
Window
3.0 ± 0.2
0.45
Lead
20 4.1 ± 0.2
2.9
0.45
Lead
8.1 ± 0.1
Window
5.9 ± 0.1
Photosensitive
surface
9.1 ± 0.2
5.08 ± 0.2
Connected
to case Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.
KGPDB0023EA KGPDB0008EB
KGPDA0012EA KGPDA0013EA
GaAsP photodiode Diffusion type
4
G1117
G1120
G1118
G3067
Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.
15 5.0 ± 0.2
1.9
0.45
Lead
12.35 ± 0.1
13.9 ± 0.2
7.5 ± 0.2
Window
10.5 ± 0.1
Photosensitive
surface
Mark( 1.4)
Connected
to case
Anode
terminal mark
Coating resin may extend a maximum
of 0.1 mm beyond the upper surface
of the package.
10.1 ± 0.1
8.9 ± 0.1
Photosensitive
area
2.0 ± 0.1
10.5
0.65
0.3
9.2 ± 0.3
7.4 ± 0.2
8.0 ± 0.3
0.5
Lead
Photosensitive
surface
3.0 ± 0.2
14 1.5 ± 0.2
0.6
Photosensitive
surface
0.45
Lead
5.0 ± 0.2
Photosensitive
area
Cathode
terminal mark 6.0 ± 0.2
Photosensitive
surface
14 4.5 ± 0.2 2.15 ± 0.3
0.45
Lead
4.65 ± 0.1
5.4 ± 0.2
2.54 ± 0.2
2.4
Connected
to case
KGPDA0014EA
KGPDA0002EA
KGPDA0008EA KGPDA0009EA
Cat. No. KGPD1002E02 May 2012 DN
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
Information described in this material is current as of May, 2012.
GaAsP photodiode Diffusion type
G2711-01
4.6 ± 0.2
(Including burr)
4.5
5.75 ± 0.2
0.25
5°
7.5 ± 5°
4.5 ± 0.4
5.6 ± 0.2
(Including burr)
5.4
10°
5.5
2.54
0.5
0.7
3°
2.0
1.0
0.6
3°
Anode
Cathode
NC
Cathode
Photosensitive
surface
KGPDA0003EA
5
