BAT14... Silicon Schottky Diode DBS mixer applications up to 12 GHz Low noise figure Low barrier type BAT14-03W 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT14-03W Package SOD323 Configuration single LS(nH) Marking 1.8 O/white Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 4 V Forward current IF 90 mA Total power dissipation Ptot 100 mW Junction temperature Tj 150 C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 TS 85 C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS 690 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Feb-03-2003 BAT14... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 4 - - IF = 1 mA 0.36 0.43 0.52 IF = 10 mA 0.48 0.55 0.66 CT - 0.22 0.35 RF - 5.5 - DC Characteristics Breakdown voltage V(BR) V I(BR) = 10 A Forward voltage VF AC Characteristics Diode capacitance VR = 0 , f = 1 MHz Differential forward resistance pF IF = 10mA / 50mA 2 Feb-03-2003 BAT14... Diode capacitance CT = (VR ) Reverse current IR = (VR) TA = Parameter f = 1MHz 10 1 0.5 pF A TA =125C 0.4 10 0 TA =85C IR CT 0.35 0.3 10 -1 0.25 TA =25C 0.2 0.15 10 -2 0.1 0.05 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 10 -3 1 5 VF 1.5 2 2.5 3 3.5 4 4.5 V 5.5 VR Forward current IF = (V F) 10 2 mA 1 10 0 IF 10 -40C 25C 85C 125C 10 -1 10 -2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1 VF 3 Feb-03-2003