Feb-03-2003
1
BAT14...
Silicon Schottky Diode
DBS mixer applications up to 12 GHz
Low noise figure
Low barrier type
BAT14-03W
1 2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Configuration LS(nH) Marking
BAT14-03W SOD323 single 1.8 O/white
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR4 V
Forward current IF90 mA
Total power dissipation
TS
85 °C
Ptot 100 mW
Junction temperature T
j
150 °C
Operating temperature range To
p
-55 ... 125
Storage temperature Tst
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS
690 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
Feb-03-2003
2
BAT14...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 10 µA
V(BR) 4 - - V
Forward voltage
IF = 1 mA
IF = 10 mA
VF
0.36
0.48
0.43
0.55
0.52
0.66
AC Characteristics
Diode capacitance
VR = 0 , f = 1 MHz
CT- 0.22 0.35 pF
Differential forward resistance
IF = 10mA / 50mA
RF- 5.5 -
Feb-03-2003
3
BAT14...
Diode capacitance CT =
(VR)
f = 1MHz
0 0.5 1 1.5 2 2.5 3 3.5 4 V5
VF
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
pF
0.5
CT
Reverse current IR =
(VR)
TA = Parameter
1 1.5 2 2.5 3 3.5 4 4.5 V5.5
VR
-3
10
-2
10
-1
10
0
10
1
10
µA
IR
TA =125°C
TA =85°C
TA =25°C
Forward current IF =
(VF)
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V1
VF
-2
10
-1
10
0
10
1
10
2
10
mA
IF
-40°C
25°C
85°C
125°C
