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CFB0301
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3236 Scott Boulevard Santa Clara, California 95054 Phone: (408) 986-5060 Fax: (408) 986-5095
CFB0301
Features
❏Low-Noise Figure from 0.8 to 2.0 GHz
❏High Gain
❏High Intercept Point
❏Highly Stable
❏Easily Matched to 50Ω
❏70 mil Package
Applications
❏Cellular Base Stations
❏PCS Base Stations
❏Industrial Data Networks
Description
Celeritek’s CFB0301 is a high performance GaAs
MESFET with 600 µm gate width and 0.25 µm gate length.
The low noise figure and high intercept point of this device
makes it well suited for use as the low-noise amplifier of the
High Dynamic Range
Low-Noise GaAs FET
Product Specifications
June 2002 (1 of 3)
base station receiver in PCS, Japanese PHS, AMPS, GSM and
other communications systems. The CFB0301 is in an indus-
try-standard 70 mil package. It is surface mountable and
available in tape and reel.
Electrical Specifications (TA = 25°C, 2 GHz)
Standard
Parameters Conditions Min Typ Deviation 4Max Units
Vd= 2V, Id= 25 mA
Noise Figure 20.6 dB
Associated Gain 2@ Noise Figure 16 dB
Pout 1, 3 P-1 15.0 dBm
IP3 3+5 dBm POUT/Tone 24 dBm
Id 3@ P-1 35 mA
Vd= 4V, Id= 30 mA
Noise Figure 20.7 dB
Associated Gain 2@ Noise Figure 17 dB
Pout 1, 3 P-1 20.5 dBm
IP3 3+5 dBm POUT/Tone 30 dBm
Id 3@ P-1 56 mA
Vd= 4V, Id= 70 mA
Noise Figure 20.8 0.08 0.9 dB
Associated Gain 2@ Noise Figure 16 17 0.4 dB
Pout 1, 3 P-1 20 21 0.4 dBm
IP3 3+5 dBm POUT/Tone 32 34 0.9 dBm
Id 3@ P-1 77 mA
Transconductance Vds = 2 V, Vgs = 0 V 70 140 mho
Saturated Drain Current Vds = 2 V, Vgs = 0 V 120 150 180 mA
Pinchoff Voltages Vds = 2 V, Ids = 1 mA -2.5 -1.3 -0.5 V
Thermal Resistance @ Tcase = 150°C liquid crystal test 200 °C/W
Notes: 1. @ Tcase = 25°C. Derate 5 mW/°C for Tcase >25°C.
2. Input matched for low noise.
3. Matched for power transfer.
4. Standard deviation based on 10 wafers randomly selected
and is provided as an estimate of the distribution only.
Trademarks are the property of their respected owners.
3236 Scott Boulevard, Santa Clara, California 95054
Phone: (408) 986-5060 Fax: (408) 986-5095
Typical Noise Parameters (Vds = 4 V, Ids = 30 mA)
Frequency Fmin 1Gamma Opt
(GHz) (dB) Mag Ang Rn/50
0.8 0.4 0.6 27 0.19
1.0 0.4 0.6 29 0.17
1.2 0.4 0.6 32 0.18
1.4 0.4 0.6 35 0.18
1.6 0.4 0.5 38 0.17
1.8 0.4 0.5 41 0.16
2.0 0.5 0.5 45 0.15
2.2 0.5 0.5 49 0.15
2.4 0.5 0.5 54 0.14
2.6 0.5 0.5 60 0.13
Absolute Maximum Ratings
Parameter Symbol Rating
Drain-Source Voltage Vds +8V
Gate-Source Voltage Vgs -5V
Drain Current Ids Idss
Continuous Dissipation1Pt 750 mW
Channel Temperature Tch 175°C
Storage Temperature Tstg -65°C to +150°C
CFB0301 Product Specifications - June 2002
(2 of 3)
Typical Scattering Parameters (TA = 25°C, VDS = 2 V, IDS = 25 mA)
Frequency S11 S21 S12 S22
(GHz) Mag Ang Mag (dB) Ang MAG (dB) ANG MAG ANG
0.5 0.98 -20 7.17 161 0.02 78 0.42 -11
1.0 0.94 -40 6.90 148 0.03 70 0.41 -24
2.0 0.85 -76 6.00 119 0.05 52 0.36 -46
3.0 0.76 -108 5.00 95 0.07 38 0.32 -65
4.0 0.70 -130 4.30 75 0.08 30 0.30 -75
5.0 0.64 -150 3.83 55 0.09 20 0.27 -85
Optimum Noise Figure and Associated Gain
vs Frequency Vds = 2V, Ids = 25 mA
Frequency (GHz)
Noise Figure (dB)
2
4
6
8
10
12
Associated Gain (dB)
Noise Figure
Associated Gain
0
5
10
15
20
25
0
Optimum Noise Figure vs Ids & Vds
Frequency = 2 GHz
Ids (mA)
Noise Figure (dB)
10
20
30
40
50
60
70
4V
2V
0.0
2.5
Ids (mA)
Associated Gain vs Ids
Vds = 2V, Frequency = 2 GHz
Gain (dB)
10
20
30
40
50
60
70
15
20
25
10
5
0
Typical Performance
Note: 1. Fmin values reflect the circuit losses in the test fixture when
matched to optimum noise figure.
3236 Scott Boulevard Santa Clara, California 95054 Phone: (408) 986-5060 Fax: (408) 986-5095
Celeritek reserves the right to make changes without further notice to any products herein. Celeritek makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose, nor does Celeritek assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating
parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Celeritek does not convey any license under its patent
rights nor the rights of others. Celeritek products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or
other applications intended to support or sustain life, or for any other application in which the failure of the Celeritek product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Celeritek products for any such unintended or unauthorized application, Buyer shall indemnify and hold Celeritek and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Celeritek was negligent
regarding the design or manufacture of the part. Celeritek is a registered trademark of Celeritek, Inc. Celeritek, Inc. is an Equal Opportunity/Affirmative Action Employer.
Ordering Information
The CFB0301GaAs FET is available in tape and reel. An evaluation board is also available. Ordering part numbers are listed.
Part Number for Ordering Function Package
CFB0301 Low-Noise high dynamic range FET 70 mil package
CFB0301-000T Low-Noise high dynamic range FET 70 mil package in tape and reel
PB-CFB0301 Evaluation Board
CFB0301
Product Specifications - June 2002 (3 of 3)
Test Circuit
Evaluation Board Schematic
Evaluation Board Substrate:
ER = 4.65
Thickness = 0.036
Transmission Lines (Dimensions in mm.):
T1: 0.203 (W) x 11.55 (L)
T2: 0.203 (W) x 5.05 (L)
PB-CFB0301 Evaluation Board
(SMA Connectors not shown)
Evaluation Board Parts List
Item Reference Designator Description Quantity Manufacturer Part Number
1 B21 Chip ferrite bead 0805 1 World Products HB-1H2012-260JT
2 C23 Capacitor, 1000pF, 0603 1 Rohm MCH185A102JK
3 C21, C24, C26, C28-C37 Capacitor, 39pF, 0603 13 Rohm MCH185A039JK
4 C25 Capacitor, 0.01µF, 0603 1 Rohm MCH185A103JK
5 L26, L28 Inductor, 82nH, INDA5T-3 2 Toko LL2012-F8NK
6 R21 Resistor, 5.6 Ohm, 0603 1 Dale RCWP575 560
7 R22, R23 Resistor, 18 Ohm, 0603 2 Dale RCWP575 181
8 R26 Resistor, 8.2 Ohm, 0603 1 Dale RCWP575 820
RF IN
RF OUT
C23
1000 pF
T1
T2
C25
.01 pF
B21
BEAD
C24
39 pF
L26
82 nH
C26
39 pF
C31
39 pF
C29
39 pF
C30
39 pF
C31
39 pF
C32
39 pF
R22
18 Ω
C33
39 pF
C34
39 pF
C35
39 pF
C36
39 pF
R23
18
Vdd
R26
8.2Ω
C37
39 pF
L28
82 nH
C28
39 pF
R21
5.6 Ω