2SD2122(L)-(S) - Hitachi Semiconductor

2SD2122(L)/(S), 2SD2123(L)/(S)

Silicon NPN Epitaxial

ADE-208-926 (Z)

1st. Edition

Sep. 2000

Application

Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

Outline

123

11. Base

2. Collector

3. Emitter

4. Collector

DPAK

S Type

L Type

2SD2122(L)/(S), 2SD2123(L)/(S)

Absolute Maximum Ratings (Ta = 25°C)

Ratings

Item Symbol 2SD2122(L)/(S) 2SD2123(L)/(S) Unit

Collector to base voltage VCBO 180 180 V

Collector to emitter voltage VCEO 120 160 V

Emitter to base voltage VEBO 55V

Collector current IC1.5 1.5 A

Collector peak current IC(peak) 33A

Collector power dissipation PC*118 18 W

Junction temperature Tj 150 150 °C

Storage temperature Tstg –55 to +150 –55 to +150 °C

Note: 1. Value at TC = 25°C.

Electrical Characteristics (Ta = 25°C)

2SD2122(L)/(S) 2SD2123(L)/(S)

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base

breakdown voltage V(BR)CBO 180 — — 180 — — V IC = 1 mA, IE = 0

Collector to emitter

breakdown voltage V(BR)CEO 120 — — 160 — — V IC = 10 mA, RBE = ∞

Emitter to base

breakdown voltage V(BR)EBO 5——5——VI

= 1 mA, IC = 0

Collector cutoff current ICBO ——10——10µAV

CB = 160 V, IE = 0

DC current transfer ratio hFE1*260 — 200 60 — 200 A VCE = 5 V, IC = 150 mA*1

hFE2 30 — — 30 — — VCE = 5 V, IC = 500 mA*1

Collector to emitter

saturation voltage VCE(sat) ——1 ——1 V I

= 500 mA,

IB = 50 mA*1

Base to emitter voltage VBE — — 1.5 — — 1.5 V VCE = 5 V, IC = 150 mA*1

Gain bandwidth product fT— 180 — — 180 — MHz VCE = 5 V, IC = 150 mA*1

Collector output

capacitance Cob — 14 — — 14 — pF VCB = 10 V, IE = 0,

f = 1 MHz

Notes: 1. Pulse test

2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by hFE1 as follows.

60 to 120 100 to 200

2SD2122(L)/(S), 2SD2123(L)/(S)

0Case temperature TC (°C)

Collector power dissipation Pc (W)

Maximum Collector Dissipation Curve

50 100 150

0.01

0.03

0.1

0.3

1.0

3.0

Collector to emitter voltage VCE (V)

Collector current IC (A)

3 10 30 100 300

Area of Safe Operation

IC (max)

DC Operation

= 25°C)

2SD2123

2SD2122

Collector to emitter voltage VCE (V)

Collector current IC (A)

Typical Output Characteristics

10 20 30 40 50

0.2

0.6

0.8

1.0

0.4

IB = 0

= 18 W

TC = 25°C

1 mA

100

300

1,000

Collector current IC (A)

DC current transfer ratio hFE

0.03 0.1 0.3 1.0 3.0

DC Current Transfer Ratio

vs. Collector Current

VCE = 5 V

Ta = 25°C

2SD2122(L)/(S), 2SD2123(L)/(S)

0.01

0.03

0.1

0.3

1.0

Collector current IC (A)

Collector to emitter saturation voltage VCE (sat) (V)

0.03 0.1 0.3 1.0 3.0

Saturation Voltage vs. Collector Current

Ta = 25°C

lC = 10 lB0.1

0.3

1.0

3.0

Collector current IC (A)

Base to emitter saturation voltage VBE (sat) (V)

0.03 0.1 0.3 1.0 3.0

Saturation Voltage vs. Collector Current

Ta = 25°C

lC = 10 lB

Base to emitter voltage VBE (V)

Collector current IC (A)

Typical Transfer Characteristics

0.4 0.8 1.2 2.01.6

0.4

0.8

1.2

1.6

2.0

VCE = 5 V

Ta = 25°C10

100

300

1,000

Collector current IC (A)

Gain bandwidth product fT (MHz)

0.01 0.03 0.1 0.3 1.0

Gain Bandwidth Product

vs. Collector Current

VCE = 5 V

Ta = 25°C

2SD2122(L)/(S), 2SD2123(L)/(S)

100

Collector to base voltage VCB (V)

Collector output capacitance Cob (pF)

1 3 10 30 100

Collector Output Capacitance

vs. Collector to Base Voltage

f = 1 MHz

IE = 0

Ta = 25°C

2SD2122(L)/(S), 2SD2123(L)/(S)

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (L)-(1)

—

Conforms

0.42 g

Unit: mm

6.5 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

1.2 ± 0.3

0.55 ± 0.1

5.5 ± 0.5 1.7 ± 0.5

16.2 ± 0.5

3.1 ± 0.5

5.4 ± 0.5

1.15 ± 0.1

2.29 ± 0.5 2.29 ± 0.5

0.8 ± 0.1

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (S)-(1)

—

Conforms

0.28 g

Unit: mm

6.5 ± 0.5

5.4 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

0 – 0.25

0.55 ± 0.1

1.7 ± 0.5

5.5 ± 0.5

2.5 ± 0.5

1.15 ± 0.1

0.8 ± 0.1

2.29 ± 0.5

1.2 Max

(4.9)

(5.3)

2SD2122(L)/(S), 2SD2123(L)/(S)

Cautions

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intellectual property rights, in connection with use of the information contained in this document.

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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