MPSA92 MMBTA92 PZTA92 C C E E C TO-92 BE C B B SOT-23 SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Units VCEO Collector-Emitter Voltage Parameter 300 V VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient Max MPSA92 625 5.0 83.3 *MMBTA92 350 2.8 **PZTA92 1,000 8.0 200 357 125 *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2 . 1997 Fairchild Semiconductor Corporation Units mW mW/C C/W C/W MPSA92 / MMBTA92 / PZTA92 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, IB = 0 300 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 A, I E = 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 100 A, IC = 0 5.0 ICBO Collector-Cutoff Current VCB = 200 V, IE = 0 0.25 A IEBO Emitter-Cutoff Current VEB = 3.0 V, IC = 0 0.1 A 0.5 V 0.9 V V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage I C = 1.0 mA, VCE = 10 V I C = 10 mA, VCE = 10 V I C = 30 mA, VCE = 10 V I C = 20 mA, IB = 2.0 mA VBE( sat) Base-Emitter Saturation Voltage I C = 20 mA, IB = 2.0 mA 25 40 25 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Ccb Collector-Base Capacitance I C = 10 mA, VCE = 20 V, f = 100 MHz VCB = 20 V, IE = 0, f = 1.0 MHz 50 MHz 6.0 pF *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model PNP (Is=218.9f Xti=3 Eg=1.11 Vaf=100 Bf=99 Ne=1.307 Ise=218.9f Ikf=.2016 Xtb=1.5 Br=24.67 Nc=2 Isc=0 Ikr=0 Rc=7 Cjc=19.88p Mjc=.4876 Vjc=.75 Fc=.5 Cje=81.49p Mje=.3493 Vje=.75 Tr=516.9p Tf=1.395n Itf=1.5 Vtf=22 Xtf=270 Rb=10) h FE - DC CURRENT GAIN DC Current Gain vs Collector Current 140 100 60 - 40 C 0 0.1 125 C 0.2 40 20 = 10 0.4 25 C 80 Collector-Emitter Saturation Voltage vs Collector Current 0.6 125 C 120 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Typical Characteristics VCE = 5V 1 10 I C - COLLECTOR CURRENT (mA) P 6 100 25 C - 40 C 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 MPSA92 / MMBTA92 / PZTA92 PNP High Voltage Amplifier (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current VBE(ON)- BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Typical Characteristics 1 0.9 25 C 0.7 - 40 C 25 C 0.6 125 C 0.6 0.5 125 C 0.4 0.4 0.3 1 0.8 - 40 C 0.8 Base-Emitter ON Voltage vs Collector Current = 10 0.2 1 IC 10 - COLLECTOR CURRENT (mA) 100 VCE = 5V 1 Junction Capacitance vs Reverse Bias Voltage 100 10 JUNCTION CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) VCB = 150V 10 1 0.1 50 75 100 125 T A - AMBIENT TEMPERATURE (C) f = 1.0 MHz C ib 1 C ob 0.1 0.1 150 1 10 V R - REVERSE VOLTAGE (V) P 6 P 6 Gain Bandwidth Product vs Collector Current Power Dissipation vs Ambient Temperature 100 1 100 V CE = 50V P D - POWER DISSIPATION (W) f T - GAIN BANDWIDTH PRODUCT (MHz) 100 P 6 Collector-Cutoff Current vs Ambient Temperature 25 10 I C - COLLECTOR CURRENT (mA) 80 SOT-223 0.75 V CE = 15V 60 40 TO-92 0.5 SOT-23 0.25 20 0 0 1 10 20 I C - COLLECTOR CURRENT (mA) P 76 50 100 0 25 50 75 100 o TEMPERATURE ( C) 125 150 MPSA92 / MMBTA92 / PZTA92 PNP High Voltage Amplifier