AO6424 30V N-Channel MOSFET General Description Product Summary The AO6424 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V 5A RDS(ON) (at VGS=10V) < 31m RDS(ON) (at VGS =4.5V) < 43m TSOP6 Top View D Bottom View Top View D 1 6 D 2 5 D G 3 4 S D G S Pin1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 2: Dec. 2011 Steady-State Steady-State A 1.25 W 0.8 TJ, TSTG Symbol t 10s V 20 PD TA=70C 20 4 IDM TA=25C Power Dissipation B Units V 5 ID TA=70C Maximum 30 RJA RJL www.aosmd.com -55 to 150 Typ 82 110 56 C Max 100 130 70 Units C/W C/W C/W Page 1 of 5 AO6424 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250A, VGS=0V TJ=55C Gate-Body leakage current VDS=0V, VGS=20V VDS=VGS ID=250A 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 20 100 nA 1.8 2.4 V 25.5 31 41 50 VGS=4.5V, ID=4A 34 43 m 1 V 1.5 A VGS=10V, ID=5A Static Drain-Source On-Resistance TJ=125C A gFS Forward Transconductance VDS=5V, ID=5A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ 255 VGS=0V, VDS=15V, f=1MHz m S 310 45 pF pF 35 50 pF 3.25 4.9 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.2 6.3 nC Qg(4.5V) 2.55 3.2 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=5A VGS=10V, VDS=15V, RL=3, RGEN=3 1.6 nC 0.85 nC 1.3 nC 4.5 ns 2.5 ns 14.5 ns tf Turn-Off Fall Time 3.5 ns trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/s 8.5 Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/s 2.2 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Dec. 2011 www.aosmd.com Page 2 of 5 AO6424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 30 10V VDS=5V 7V 4.5V 25 10 20 ID(A) ID (A) 4V 15 3.5V 5 10 5 VGS=3V 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 5 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 4.5 2 Normalized On-Resistance 40 35 RDS(ON) (m ) 25C 125C VGS=4.5V 30 25 VGS=10V 20 1.8 VGS=10V ID=5A 1.6 17 5 2 VGS=4.5V10 1.4 1.2 ID=4A 1 0.8 0 3 6 9 12 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 100 1.0E+02 ID=5A 1.0E+01 40 1.0E+00 60 IS (A) RDS(ON) (m ) 80 125C 1.0E-01 1.0E-02 125C 1.0E-03 40 25C 1.0E-04 25C 1.0E-05 20 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: Dec. 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO6424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 10 VDS=15V ID=5A 350 300 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 250 200 150 Coss 100 2 50 Crss 0 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 TA=25C 10s RDS(ON) limited 1000 Power (W) ID (Amps) 10.0 100s 1.0 1ms 10ms TJ(Max)=150C TA=25C 0.1 100 10 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=130C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: Dec. 2011 www.aosmd.com Page 4 of 5 AO6424 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 2: Dec. 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5