MJE182 Low voltage high speed switching NPN transistor Features High speed switching NPN device Applications Audio amplifier High speed switching applications Description SOT-32 This device is an NPN low voltage transistor manufactured using epitaxial planar technology and housed in a SOT-32 plastic package. It is designed for low power audio amplifiers and low current, high speed switching applications. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging MJE182 MJE182 SOT-32 Tube August 2011 Doc ID 022074 Rev 1 1/7 www.st.com 7 Electrical ratings 1 MJE182 Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit VCEO Collector-emitter voltage (IB = 0) 80 V VCBO Collector-base voltage (IE = 0) 100 V VEBO Base-emitter voltage (IC = 0) 7 V Collector current 3 A Collector peak current (tP < 5 ms) 6 A Base current 1 A IBM Base peak current (tP < 5 ms) 2 A PTOT Total dissipation at Tc 25 C 12.5 W Tstg Storage temperature IC ICM IB TJ Table 3. Symbol RthJC Rth-amb 2/7 Parameter -65 to 150 Total power dissipation at Tc 25 C C 150 Thermal data Parameter Thermal resistance junction-case_max Thermal resistance junction-ambient_max Doc ID 022074 Rev 1 Value Unit 10 C/W 83.3 C/W MJE182 2 Electrical characteristics Electrical characteristics Tcase = 25 C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB= 100 V VCB = 100 V, Tc = 150 C 0.1 0.1 A mA VEBO Emitter cut-off current (IC = 0) VEB = 7 V 0.1 A VCEO(sus)(1) Collector-emitter I = 10 mA sustaining voltage (IB = 0) C 80 V Collector-emitter saturation voltage IC = 0.5 A IC = 1.5 A IC = 3 A IB = 50 mA IB = 0.15 A IB = 0.6 A 0.3 0.9 1.7 V VBE(sat) (1) Base-emitter saturation voltage IC = 1.5 A IC = 3 A IB = 0.15 A IB = 0.6 A 1.5 2 V V VBE(on) (1) Base-emitter on voltage IC = 0.5 A VCE =1 V 1.2 V DC current gain IC = 0.1 A IC = 0.5 A IC = 1.5 A VCE = 1 V VCE = 1 V VCE = 1 V 50 30 12 Transistor frequency IC = 0.1 A f=10 MHz VCE = 10 V 50 Collector-base capacitance (IE=0) VCB = 10 V VCE(sat) hFE fT CCBO (1) f= 0.1 MHz 250 MHz 40 pF 1. Pulse test: pulse duration 300 s, duty cycle 1.5 %. Doc ID 022074 Rev 1 3/7 Package mechanical data 3 MJE182 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 4/7 Doc ID 022074 Rev 1 MJE182 Package mechanical data Table 5. SOT-32 (TO-126) mechanical data mm. Dim. Min. Typ. Max. A 2.40 2.90 B 0.64 0.88 B1 0.39 0.63 D 10.50 11.05 E 7.40 7.80 e 2.04 2.29 2.54 e1 4.07 4.58 5.08 L 15.30 16 OP 2.90 3.20 Q Q1 3.80 1 1.52 H2 2.15 I 1.27 Figure 2. SOT-32 (TO-126) drawing ?2%6?% Doc ID 022074 Rev 1 5/7 Revision history 4 MJE182 Revision history Table 6. 6/7 Document revision history Date Revision 08-Aug-2011 1 Changes Initial release Doc ID 022074 Rev 1 MJE182 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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