ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 1700
V
IC = 800
A
Doc. No. 5SYA1590-00 Oct 06
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Maximum rated values 1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 1700
V
DC collector current IC Tc = 80 °C 800 A
Peak collector current ICM tp = 1 ms, Tc = 80 °C 1600
A
Gate-emitter voltage VGES -20 20 V
Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) 4800
W
DC forward current IF 800 A
Peak forward current IFRM 1600
A
Surge current IFSM VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave 6600
A
IGBT short circuit SOA tpsc VCC = 1200 V, V CEM CHIP ≤ 1700 V
VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs
Isolation voltage Visol 1 min, f = 50 Hz 4000
V
Junction temperature Tvj 150 °C
Junction operating temperature Tvj(op) -40 125 °C
Case temperature Tc -40 125 °C
Storage temperature Tstg -40 125 °C
Ms Base-heatsink, M6 screws 4 6
Mt1 Main terminals, M8 screws 8 10
Mounting torques 2) Mt2 Auxiliary terminals, M4 screws 2 3 Nm
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
ABB HiPak
TM
IGBT Module
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ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06 page 2 of 9
IGBT characteristic values 3)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 10 mA, Tvj = 25 °C 1700
V
Tvj = 25 °C 2.0 2.3 2.6 V
Collector-emitter 4)
saturation voltage VCE sat IC = 800 A, VGE = 15 V Tvj = 125 °C 2.3 2.6 2.9 V
Tvj = 25 °C 4 mA
Collector cut-off current ICES VCE = 1700 V, VGE = 0 V Tvj = 125 °C 40 mA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500
500 nA
Gate-emitter threshold voltage VGE(TO) IC = 80 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V
Gate charge Qge IC = 800 A, VCE = 900 V,
VGE = -15 V .. 15 V 7.3 µC
Input capacitance Cies 76
Output capacitance Coes 7.3
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 3.2 nF
Tvj = 25 °C 485
Turn-on delay time td(on) Tvj = 125 °C 485 ns
Tvj = 25 °C 165
Rise time tr
VCC = 900 V,
IC = 800 A,
RG = 1.2 Ω,
VGE = ±15 V,
Lσ = 80 nH, inductive load Tvj = 125 °C 170 ns
Tvj = 25 °C 790
Turn-off delay time td(off) Tvj = 125 °C 875 ns
Tvj = 25 °C 160
Fall time tf
VCC = 900 V,
IC = 800 A,
RG = 1.8 Ω,
VGE = ±15 V,
Lσ = 80 nH, inductive load Tvj = 125 °C 185 ns
Tvj = 25 °C 160
Turn-on switching energy Eon VCC = 900 V, IC = 800 A,
VGE = ±15 V, RG = 1.2 Ω,
Lσ = 80 nH, inductive load Tvj = 125 °C 250 mJ
Tvj = 25 °C 220
Turn-off switching energy Eoff VCC = 900 V, IC = 800 A,
VGE = ±15 V, RG = 1.8 Ω,
Lσ = 80 nH, inductive load Tvj = 125 °C 300 mJ
Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 1200 V, VCEM CHIP ≤ 1700 V 3600
A
Module stray inductance Lσ CE Leg 1 24 nH
TC = 25 °C 0.18
Resistance, terminal-chip RCC’+EE’ Leg 1 TC = 125 °C 0.255
mΩ
3) Characteristic values according to IEC 60747 – 9
4) Collector-emitter saturation voltage is given at chip level
5SNE 0800M170100
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Doc. No. 5SYA1590-00 Oct 06 page 3 of 9
Diode characteristic values 5)
Parameter Symbol Conditions min typ max
Unit
Tvj = 25 °C 1.65 2.0
Forward voltage 6) VF IF = 800 A Tvj = 125 °C 1.7 2.0 V
Tvj = 25 °C 560
Reverse recovery current Irr Tvj = 125 °C 730 A
Tvj = 25 °C 210
Recovered charge Qrr Tvj = 125 °C 385 µC
Tvj = 25 °C 690
Reverse recovery time trr Tvj = 125 °C 975 ns
Tvj = 25 °C 150
Reverse recovery energy Erec
VCC = 900 V,
IF = 800 A,
VGE = ±15 V,
RG = 1.2 Ω
Lσ = 80 nH
inductive load
Tvj = 125 °C 270 mJ
Module stray inductance Lσ AE Leg 2 24 nH
TC = 25 °C 0.18
Resistance, terminal-chip RAA’+CC’ Leg 2 TC = 125 °C 0.255
mΩ
5) Characteristic values according to IEC 60747 – 2
6) Forward voltage is given at chip level
Thermal properties 7)
Parameter Symbol Conditions min typ max
Unit
IGBT thermal resistance
junction to case Rth(j-c)IGBT 0.021
K/W
Diode thermal resistance
junction to case Rth(j-c)DIODE
per switch 0.036
K/W
IGBT thermal resistance 2)
case to heatsink Rth(c-s)IGBT
IGBT per switch, λ grease = 1W/m x K 0.024
K/W
Diode thermal resistance 7)
case to heatsink Rth(c-s)DIODE
Diode per switch, λ grease = 1W/m x K 0.048
K/W
2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
Mechanical properties 7)
Parameter Symbol Conditions min typ max
Unit
Dimensions L x W x H
Typical , see outline drawing 130 x 140 x 38 mm
Term. to base:
10
Clearance distance in air da according to IEC 60664-1
and EN 50124-1 Term. to term:
10 mm
Term. to base:
15
Surface creepage distance ds according to IEC 60664-1
and EN 50124-1 Term. to term:
15 mm
Mass m 900 g
7) Thermal and mechanical properties according to IEC 60747 – 15
5SNE 0800M170100
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Doc. No. 5SYA1590-00 Oct 06 page 4 of 9
Electrical configuration Leg 1 Leg 2
E1
E1
G1
C1 C1 E2
C2
Outline drawing 2)
E1
E2C1
C2
E1
G1
C1
Note: all dimensions are shown in mm
2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for industrial level.
5SNE 0800M170100
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Doc. No. 5SYA1590-00 Oct 06 page 5 of 9
0
200
400
600
800
1000
1200
1400
1600
012345
VCE [V]
IC [A]
VGE = 15 V
125 °C
25 °C
0
200
400
600
800
1000
1200
1400
1600
0123456789101112
VGE [V]
IC [A]
125 °C
25 °C
VCE = 25 V
Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level
0
200
400
600
800
1000
1200
1400
1600
0123456
VCE [V]
IC [A]
9V
11V
13V
15V
17V
Tvj = 25 °C
0
200
400
600
800
1000
1200
1400
1600
0123456
VCE [V]
IC [A]
Tvj = 125 °C
11V
9V
13V
17V
15V
Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level
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Doc. No. 5SYA1590-00 Oct 06 page 6 of 9
E
sw
[J] = 347 x 10
-9
x I
C2
+ 280 x 10
-6
x I
C
+ 97.7 x 10
-3
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
0 400 800 1200 1600
IC [A]
Eon, Eoff [J]
VCC = 900 V
VGE = ±15 V
RGon = 1.2 ohm
RGoff = 1.8 ohm
Tvj = 125 °C
Lσ = 80 nH
Eon
Eoff
0.0
0.5
1.0
1.5
2.0
0 5 10 15 20 25
RG [ohm]
Eon, Eoff [J]
VCC = 900 V
IC = 800 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 80 nH Eon
Eoff
Fig. 5 Typical switching energies per pulse
vs collector current Fig. 6 Typical switching energies per pulse
vs gate resistor
0.01
0.1
1
10
0 400 800 1200 1600
IC [A]
td(on), tr, td(off), tf [µs]
VCC = 900 V
RGon = 1.2 ohm
RGoff = 1.8 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 80 nH
td(off)
tf
td(on)
tr
0.1
1
10
0 5 10 15 20 25
RG [ohm]
td(on), tr, td(off), tf [µs]
VCC = 900 V
IC = 800 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 80 nH
td(off)
tf
td(on)
tr
Fig. 7 Typical switching times
vs collector current Fig. 8 Typical switching times
vs gate resistor
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Doc. No. 5SYA1590-00 Oct 06 page 7 of 9
1
10
100
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
Cies
Coes
Cres
VGE = 0V
fOSC = 1 MHz
VOSC = 50 mV
0
5
10
15
20
0123456
Qg [µC]
VGE [V]
V
CC
= 900 V
VCC = 1300 V
IC = 800 A
Tvj = 25 °C
Fig. 9 Typical capacitances
vs collector-emitter voltage Fig. 10 Typical gate charge characteristics
0
0.5
1
1.5
2
2.5
0500 1000 1500 2000
VCE [V]
ICpulse / IC
Chip
Module
VCC ≤ 1200 V, Tvj = 125 °C
VGE = ±15 V, RG = 1.8 ohm
Fig. 11 Turn-off safe operating area (RBSOA)
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ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06 page 8 of 9
E
rec
[mJ] = -0.105 x 10
-3
x I
F2
+ 352 x 10
-3
x I
F
+ 49
0
100
200
300
400
0400 800 1200 1600
IF [A]
Erec [mJ]
0
200
400
600
800
Irr [A], Qrr [µC]
Irr
Qrr
Erec
VCC = 900 V
VGE = ±15 V
RG = 1.2 ohm
Tvj = 125 °C
Lσ = 80 nH
0
100
200
300
400
012345
di/dt [kA/µs]
Erec [mJ], Qrr [µC]
0
200
400
600
800
Irr [A]
VCC = 900 V
IF = 800 A
Tvj = 125 °C
Lσ = 80 nH
Erec
Qrr
Irr
RG
= 22 ohm
RG
= 8.2 o hm
RG
= 3.9 o hm
RG
= 2.2 ohm
RG
= 1.5 o hm
RG
= 1.2 o hm
Fig. 12 Typical reverse recovery characteristics
vs forward current Fig. 13 Typical reverse recovery characteristics
vs di/dt
0
200
400
600
800
1000
1200
1400
1600
00.5 1 1.5 2 2.5
VF [V]
IF [A]
125°C
25°C
0
400
800
1200
1600
0500 1000 1500 2000
VR [V]
IR [A]
VCC ≤ 1200 V
di/dt ≤ 5 kA/µs
Tvj = 125 °C
Fig. 14 Typical diode forward characteristics,
chip level Fig. 15 Safe operating area diode (SOA)
5SNE 0800M170100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications witho
ut notice.
ABB Switzerland Ltd Doc. No. 5SYA1590-00 Oct 06
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ic)-(jth ∑
=
i
τ
i 1 2 3 4
Ri(K/kW) 15.2 3.6 1.49 0.74
IGBT
τi(ms) 202 20.3 2.01 0.52
Ri(K/kW) 25.3 5.78 2.6 2.52
DIODE
τi(ms) 210 29.6 7.01 1.49
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t [s]
Zth(j-c) [K/W] IGBT, DIODE
Zth(j-c) IGBT
Zth(j-c) Diode
Fig. 16 Thermal impedance vs time
For detailed information refer to:
• 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays
• 5SYA 2043-01 Load – cycle capability of HiPaks
• 5SZK 9120-00 Specification of environmental class for HiPak (available upon request)
