[INTERSIL 2N5515-2N5524 Monolithic Dual N-Channel JFET ABSOLUTE MAXIMUM RATINGS (Note 1) @25C (unless otherwise noted) PIN CONFIGURATION Maximum Temperatures Storage Temperature -65C to +200C TO-71 Maximum Power Dissipation ONE SIDE BOTH SIDES Device Dissipation 250 mW 500 mw @ Free Air Temperature 85C 85C Linear Derating 3.85 mw/Cc 7.7 mWfC Maximum Voltages & Current Ves Gate to Source Voltage -40 V h Vep_ Gate to Drain Voltage -40V te I G Gate Current 50 mA , CHIP. TOPOGRAPHY (2N5520-24) (2N5515-19) >, +6019 6017 FEATURES & Co 039 cos. om | fe 07:11 007 e ) ls, x O06 n+@ Ley Tight Temperature Tracking AVac <5 uV/C NeS==4 Te 2 Puaces om 14 f Gs | oe re . . : 7G wd Q vat Marching - 4 s] : os rae | ip, GS m 82 Tree Places SOUHCE 2.6 AITL Ig < 10 nA @ 125 c Gath teem Of, <3% oss <.1 umho @ High Common Mode-Rejection CMRR < 100 db ORDERING INFORMATION Low Noise e,, < 15 nV / JHz @10 Hz TO-72 WAFER DICE 2N8515_ | 2N5515/W_ | 2N5515/D 2N5516_ | 2N5516/W_| 2N5516/D 2N5517_ | 2N5617/W_ | 2N5517/D 2N5518 =| 2N5518/W_ | 2N5518/D 2N5519_| 2N5519/W_| 2N5519/D 2N5520_ | 2N5520/W_| 2N5520/D 2N5521_ | 2N5521/W | 2N5521/D 2N5522_ | 2N5522/W_| 2N5522/D 2N5523 | 2N5523/W.| 2N5523/D 2N5524 | 2N5524/W | 2N5524/0 2N5525 | 2N5525/W | 2N5525/d 1-852N5515 thru 2N5524 ELECTRICAL CHARACTERISTICS (28C unless otherwise noted) DINWERSIL PARAMETER MIN MAX | UNITS TEST CONDITIONS (+ 25C} -250 pA a =-30V, Vps= lGss Gate Reverse Current (+150C) _250 nA VGs ) ps=0 BVgss _Gate-Source Breakdown Voltage -40 Vv IG=1RA, Vps=0 Ve Gate-Source Pinch-Off Voltage 0.7 4 Vv Vps= 20 V, Ip = THA loss Drain Current.at Zero Gate Voltage (Note 2) 0.5 75 mA Vos = 20 V, Ves =0 ots tamer Source Forward Transeonductancs 1000 4000 | ymho Vps = 20 V, Vgg = 0 f=1kHz Goss Common-Source Output Conductance 10 umho Vos = 20 V, Ves =0 f= TkHz Common-Source Reverse Transfer . 5 F Vos = 20 V, Ves =90 f= 1 MHz Cress Capacitance P bs Gs Ciss Common-Source Input Capacitance 25 pF Vos = 20 V, Vgs = 0 f= 1 MHz 2N5515-19 30. [nV/AJAz| Vpg=20V.Ip= 200nA = f= 10 Hz > : . 2N5520-24 15 jnV/A/Hz VpG=20V, Ip =200uA f= 10 Hz en Equivalent Input Noise Voltage 2N5515-24 10 nVin/Hz VpG=20V,Ip=200uA f= 1 kHz (+ 25C) -100 pA : v =20V,Ip= 200KA IG Gate Current (+125C} 100 nA DG D u Ves Gate Source Voltage -0.2 -3.8 Vv VpG = 20-V, Ip = 200nA fs Newsy source Forward Transtonductance 500 | 1000 | umho VpG=20V,'p=200uA = f=1kH Goss Common-Source Output Conductance 1 xumho VpG = 20 V, 1p = 200nA MATCHING CHARACTERISTICS (25C unless otherwise noted) 2N5515,20 2N5516,21 2N5517,22 2N5518,23 2N5519,24 PARAMETER mn | WAX Tw | MAX [MIN | MAX T MIN | MAX [MIN ToMAx | UNIT TEST CONDITIONS Ipss1 Drain Current Ratio at 0.95 1 0.95 1 0.95 1 0.95 1 0.90 1 Vos = 20 V, Vg5=0 tposs2 Zero Gate Voltage {Note 2) llg1 - leat Differential oat oC) 10 10 10 10 10 nA | Vpg = 20 V. Ip = 200 uA 9s? Transconductance Ratio 0.97 1 0.97 1 0.95 1 0.95 1 0.90 1 Vpg = 20. V. Ip = 200 LA Ots2 {Note 2) = TKHz Differents VDG = 20 V, Ip = 200 pA \Gosst - Soss2! Conant Output a4 84 8.1 oA 84 penho f 2G KHz " IV@si -Vesai vole Gate-Source 5 5 10 18 15 mV | Vpq=20V. Ip = 200KA Gate-Source Voltage Differ- AIMGS1=~VGS2 antiat Drift (Ta = 428C to 5 10 20 40 go | uv?c| vog=20V.!p = 200uA 4T +125C) Gate-Source Voltage Differ- : 4SiVG1-VGS2! ential Drift (Ta = +25 to 5 10 20 40 80 | uV/C] Vp = 20 V. Ip = 200pA aT 58C) CMRR Fore ino a Rejection 100 100 90 dB \Vpp = 10 to 20 V, Ip = 200A NOTES: , 1. These ratings are limiting values above which the serviceabitity of any individual semiconductor device may be impaired. 2. Puise duration of 28mS used during test. 3. CMRR = 20L09194Vpp/4!Vgsi - Vgsa!. (AVgp = 10V) 1-86