4-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSL9110D, FSL9110R UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS -100 V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -100 V
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID2.5 A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID1.5 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 7.5 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT15 W
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT6W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.12 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . .IAS 7.5 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS2.5 A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 7.5 A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to +150 oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V -100 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS,
ID = 1mA TC = -55oC - - -7.0 V
TC = 25oC -2.0 - -6.0 V
TC = 125oC -1.0 - - V
Zero Gate Voltage Drain Current IDSS VDS = -80V,
VGS = 0V TC = 25oC--25µA
TC = 125oC - - 250 µA
Gate to Source Leakage Current IGSS VGS = ±20V TC = 25oC - - 100 nA
TC = 125oC - - 200 nA
Drain to Source On-State Voltage VDS(ON) VGS = -12V, ID = 2.5A - - -3.58 V
Drain to Source On Resistance rDS(ON)12 ID = 1.5A,
VGS = -12V TC = 25oC - 1.00 1.30 Ω
TC = 125oC - - 2.16 Ω
Turn-On Delay Time td(ON) VDD = -50V, ID = 2.5A,
RL = 20Ω, VGS -12V,
RGS = 7.5Ω
- - 20 ns
Rise Time tr- - 45 ns
Turn-Off Delay Time td(OFF) - - 40 ns
Fall Time tf- - 45 ns
Total Gate Charge Qg(TOT) VGS = 0V to -20V VDD = -50V,
ID = 2.5A - - 14 nC
Gate Charge at 12V Qg(12) VGS = 0V to -12V - 7.0 7.9 nC
Threshold Gate Charge Qg(TH) VGS = 0V to -2V - - 0.64 nC
Gate Charge Source Qgs - 1.9 2.1 nC
Gate Charge Drain Qgd - 3.4 3.8 nC
Plateau Voltage V(PLATEAU) ID = 2.5A, VDS = -15V - -7 - V
Input Capacitance CISS VDS = -25V, VGS = 0V,
f = 1MHz - 175 - pF
Output Capacitance COSS -70-pF
Reverse Transfer Capacitance CRSS -20-pF
Thermal Resistance Junction to Case RθJC - 8.3 - oC/W
Thermal Resistance Junction to Ambient RθJA - 175 - oC/W
FSL9110D, FSL9110R