MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL DIODE) FOR HIGH SPEED SWITCHING APPLICATION MC2843 SILICON EPITAXIAL TYPE DESCRIPTION it Mitsubishi MC2843 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING aterm type diode,especially designed for high speed switching application. 2102 > Due to the small pin capacitance,short switching time (reverse recovery time), it pee 1.2640.1 pas is most suitable for high speed switching application and limitter,clipper application. 20 k ~ tH ' ? FEATURE a| | 8 ! 3 @Smail pin capacitance a . rE @aQuick switching time a| 2 2 6) @dtigh voltage co @Super mini package for mounting APPLICATION ow ox For general high speed switching of audio machine, VCR. $ a ge | Jo) Ley TERMINAL CONNECTOR : ANODE NC > CATHODE Note) The dimension without tolerance represent central vaiue. 0100.1] EIAJ : SC-70 MAXIMUM RATINGS (Ta=25'C) MARKING @ [] A3 LJ o U @ INTERNAL CONNECTION @ {1 em ef Symbol Parameter Ratings Unit VRM Peak reverse voltage 75 Vv VR DC reverse voltage 50 v 1FSM Surge current(1 42S) 4 A lem Peak forward current 300 mA lo Average rectification current 100 mA Pr Total allowable dissipation(Ta=25'C ) 150 mw Tj Junction temperature +125 Cc Tstg Storage temperature -55 to +125 c ELECTRICAL CHARACTERISTICS (Ta=25C) ses Limits : Symbol Parameter Test conditions Min Typ Max Unit VFA Forward voltage te =10mA 0.72 0.9 4 VF2 Forward voltage le =50mA 0.85 1.0 Vv VFa Forward voltage \F =100MA 0.90 1.2 Vv in Reverse current Vr =50V 0.1 BA Ct Pin capacitance Ve =0,fe1MHz 1.3 4.0 pF tr Reverse recovery time (Refar ta test circuit} 3.0 ns MITSUBISHI ELECTRIC B- 29MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL DIODE) MC2843 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE REVERSE RECOVERY TIME(tr)TEST CIRCUIT TRIGGER rc DUT PULSE 0.02 uF >! SAMPLING GENERATOR ' OSCILLOSCOPE (Zout=50) (Zin=800) Ir=10mA, Va=6V + 3kQ Ri=S0Q DC POWER Law REVERSE RECOVERY SUPPLY TIME FOR tw=0.1Ir TYPICAL CHARACTERISTICS FORWARD CURRENT VS.FORWARD VOLTAGE 4100 50 _ t < c E 20 = 5 10 5 Ww Wi x 5 q a ac 5 5 2 Go 2 4 2 i = 05 3 e iva 0.2 0.4 oz 04 06 O08 10 12 FORWARD VOLTAGE VF(V) PIN CAPACITANCE VS, REVERSE VOLTAGE 10 es ~ 5 & s wy 5 - uid Go ? & 2 w - 4 5 z i 0.5 S w zZ fi a. 0.2 2 rh o ~ oy 100 2 5 10020 50 REVERSE VOLTAGE Va(V) o @INPUT VOLTAGE WAVE FORM @CURRENT WAVE FORM IN DIODE O.1lr Ik fo YY te fe REVERSE CURRENT VS.REVERSE VOLTAGE 20 30 40 50 REVERSE VOLTAGE Va(V) REVERSE RECOVERY TIME VS. FORWARD CURRENT 20 40 60 80 100 FORWARD CURRENT tr(mA) 8-30 oe SS