Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP120 Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage VRRM 1600 V Durchlastrom Grenzeffektivwert RMS forward current per chip IFRMSM 40 A Id 50 A IFSM 500 A Dauergleichstrom DC forward current TC = 80C Stostrom Grenzwert tP = 10 ms, T vj = surge forward current tP = 10 ms, T vj = 150C Grenzlastintegral tP = 10 ms, T vj = 2 I t - value 25C 400 A 1250 A2s 800 A2s VCES 1200 V IC,nom. 50 A IC 80 A ICRM 100 A Ptot 360 W VGES +/- 20V V IF 50 A IFRM 100 A 2 It 1.200 A2s VCES 1200 V TC = 80 C IC,nom. 25 A TC = 25 C IC 45 A I2 t 25C tP = 10 ms, T vj = 150C Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tc = 80 C TC = 25 C Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, Gesamt-Verlustleistung total power dissipation TC = 25C T C = 80 C Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Tc = 80 C Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral I2t - value VR = 0V, tp = 10ms, Tvj = 125C Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80C ICRM 50 A Gesamt-Verlustleistung total power dissipation TC = 25C Ptot 230 W VGES +/- 20V V IF 15 A IFRM 30 A Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Tc = 80 C Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms prepared by: Andreas Schulz date of publication:12.06.2003 approved by: Robert Severin revision: 6 1(11) DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP120 Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. VF - 1,05 - V Diode Gleichrichter/ Diode Rectifier Durchlaspannung forward voltage Tvj = 150C, Schleusenspannung threshold voltage Tvj = 150C V(TO) - - 0,8 V Ersatzwiderstand slope resistance Tvj = 150C rT - - 6,5 mW Sperrstrom reverse current Tvj = 150C, IR - 3 - mA RAA'+CC' - 4 - mW min. typ. max. - 2,2 2,55 V - 2,5 - V VGE(TO) 4,5 5,5 6,5 V Cies - 3,3 - nF I F = 50 A V R = 1600 V Modul Leitungswiderstand, Anschlusse-Chip TC = 25C lead resistance, terminals-chip Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, IC = 50 A IC = 50 A Gate-Schwellenspannung gate threshold voltage VCE = VGE, IC = 2 mA Eingangskapazitat input capacitance f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current VGE = 0V, Tvj = 25C, V CE = 1200 V VGE = 0V, Tvj =125C, V CE = 1200 V Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Tvj = 25C, VCE = 0V, VGE =20V, Tvj =25C IC = INenn, V CC = 15 Ohm 15 Ohm IC = INenn, 600 V VGE = 15V, Tvj = 25C, R G = 15 Ohm VGE = 15V, Tvj = 125C, R G = 15 Ohm IC = INenn, 600 V VGE = 15V, Tvj = 25C, R G = 15 Ohm VGE = 15V, Tvj = 125C, R G = 15 Ohm IC = INenn, 600 V V CC = VGE = 15V, Tvj = 25C, R G = 15 Ohm VGE = 15V, Tvj = 125C, R G = 15 Ohm IC = INenn, 600 V V CC = VGE = 15V, Tvj = 125C, R G = IC = INenn, 50 nH V CC = 600 V LS = Kurzschluverhalten SC Data 15 Ohm LS = VGE = 15V, Tvj = 125C, R G = 3,0 500 A 4,0 - mA - - 300 nA 15 Ohm td,on tr td,off tf - 65 - ns - 60 - ns - 45 - ns - 45 - ns - 380 - ns - 400 - ns - 10 - ns - 30 - ns Eon - 6,5 - mWs Eoff - 6 - mWs ISC - 300 - A 50 nH tP 10s, VGE 15V, RG = 15 Ohm Tvj125C, VCC = 720 V dI/dt = - 600 V VGE = 15V, Tvj = 125C, R G = V CC = ICES IGES VGE = 15V, Tvj = 25C, R G = V CC = VCE sat 4000 A/s 2(11) DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP120 Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip TC = 25C lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy VGE = 0V, Tvj = 25C, IF = 50 A VGE = 0V, Tvj = 125C, IF = 50 A IF=INenn, - diF/dt = VGE = -10V, Tvj = 25C, V R = 600 V 600 V - diF/dt = 600 V VGE = -10V, Tvj = 125C, V R = 600 V - diF/dt = 600 V VGE = -10V, Tvj = 125C, V R = 600 V Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, IC = 25,0 A IC = 25,0 A Gate-Schwellenspannung gate threshold voltage VCE = VGE, IC = 1mA Eingangskapazitat input capacitance f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current VGE = 0V, Tvj = 25C, V CE = 1200 V VGE = 0V, Tvj = 125C, V CE = 1200 V Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25C Diode Brems-Chopper/ Diode Brake-Chopper Tvj = 25C, Durchlaspannung forward voltage Tvj = 125C, 25,0 A IF = 25,0 A TC = 25C Abweichung von R100 deviation of R100 TC = 100C, R 100 = 493 W Verlustleistung power dissipation TC = 25C B-Wert B-value R2 = R1 exp [B(1/T2 - 1/T1)] - - 100 nH RCC'+EE' - 7 - mW min. typ. max. - 1,75 2,2 V - 1,7 - V VF IRM Qr ERQ - 75 - A - 85 - A - 5,5 - As - 12 - As - 1,6 - mWs - 4 - mWs min. typ. max. - 2,2 2,55 V - 2,5 - V VGE(TO) 4,5 5,5 6,5 V Cies - 1,5 - nF VCE sat ICES - 1,5 500 A - 2,0 - mA - - 300 nA min. typ. max. - 2,1 2,4 V - 2 - V min. typ. max. R25 - 5 - kW DR/R -5 5 % 20 mW IGES IF = NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance LsCE 1600A/s VGE = -10V, Tvj = 25C, V R = Tvj = 25C, max. 1600A/s VGE = -10V, Tvj = 25C, V R = IF=INenn, typ. 1600A/s VGE = -10V, Tvj = 125C, V R = IF=INenn, min. VF P25 B25/50 3375 K 3(11) DB-PIM-10.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GP120 Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to case RthJC Gleichr. Diode/ Rectif. Diode min. typ. max. - - 0,65 Trans. Wechsr./ Trans. Inverter - - 0,35 K/W K/W Diode Wechsr./ Diode Inverter - - 0,55 K/W Trans. Bremse/ Trans. Brake - - 0,55 K/W Diode Bremse/ Diode Brake - - 1,2 K/W - 0,04 - K/W - 0,02 - K/W - 0,04 - K/W Ubergangs-Warmewiderstand Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter lgrease=1W/m*K RthCK Diode Wechsr./ Diode Inverter Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj - - 150 C Betriebstemperatur operation temperature Top -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 125 C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation Al2O3 CTI comperative tracking index 225 M Anzugsdrehmoment f. mech. Befestigung mounting torque 3 Nm 10% Gewicht weight G 300 g 4(11) DB-PIM-10.xls Technische Information / Technical Information BSM50GP120 IGBT-Module IGBT-Modules Ausgangskennlinienfeld Wechselr. (typisch) CI = f (VCE) Output characteristic Inverter (typical) VGE = 15 V 100 90 80 Tj = 25C 70 Tj = 125C IC [A] 60 50 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 4 4,5 5 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) CI = f (VCE) Output characteristic Inverter (typical) Tvj = 125C 100 90 VGE = 17V VGE = 15V 80 VGE = 13V VGE = 11V 70 VGE = 9V IC [A] 60 50 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 VCE [V] 5(11) DB-PIM-10.xls Technische Information / Technical Information BSM50GP120 IGBT-Module IGBT-Modules Ubertragungscharakteristik Wechselr. (typisch) I C Transfer characteristic Inverter (typical) = f (VGE) VCE = 20 V 100 90 80 70 Tj = 25C Tj = 125C IC [A] 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 VGE [V] Durchlakennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) FI = f (VF) 100 90 80 70 Tj = 25C Tj = 125C IF [A] 60 50 40 30 20 10 0 0 0,5 1 1,5 2 2,5 VF [V] 6(11) DB-PIM-10.xls Technische Information / Technical Information BSM50GP120 IGBT-Module IGBT-Modules Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) Switching losses Inverter (typical) Tj = 125C, V GE = 15 V, VCC = 600 V RGon = RGoff = 15 Ohm 100 120 18 16 Eon 14 Eoff Erec E [mWs] 12 10 8 6 4 2 0 0 20 40 60 80 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) Eon = f (RG), Eoff = f (RG), Erec = f (RG) Tj = 125C, V GE = +-15 V , I c = Inenn , VCC = 600 V 10 9 Eon Eoff 8 Erec E [mWs] 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 RG [W] 7(11) DB-PIM-10.xls Technische Information / Technical Information BSM50GP120 IGBT-Module IGBT-Modules Transienter Warmewiderstand Wechselr. Transient thermal impedance Inverter ZthJC = f (t) 1 Zth-IGBT ZthJC [K/W] Zth-FWD 0,1 0,01 0,001 0,01 0,1 1 10 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) I C = f (VCE) Reverse bias save operating area Inverter (RBSOA)Tvj = 125C, VGE = 15V, RG = 15 Ohm 120 100 80 IC,Modul IC [A] IC,Chip 60 40 20 0 0 200 400 600 800 1000 1200 1400 VCE [V] 8(11) DB-PIM-10.xls Technische Information / Technical Information BSM50GP120 IGBT-Module IGBT-Modules Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) CI = Output characteristic brake-chopper-IGBT (typical) f (VCE) VGE = 15 V 50 45 40 Tj = 25C Tj = 125C 35 IC [A] 30 25 20 15 10 5 0 0 0,5 1 1,5 2 2,5 3 3,5 4 VCE [V] Durchlakennlinie der Brems-Chopper-Diode (typisch) Forward characteristic of brake-chopper-FWD (typical) FI = f (VF) 50 45 40 35 Tj = 25C Tj = 125C IF [A] 30 25 20 15 10 5 0 0 0,5 1 1,5 2 2,5 3 VF [V] 9(11) DB-PIM-10.xls Technische Information / Technical Information BSM50GP120 IGBT-Module IGBT-Modules Durchlakennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) FI = f (VF) 100 90 80 70 Tj = 25C IF [A] 60 Tj = 150C 50 40 30 20 10 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp R[W] 10000 1000 100 0 20 40 60 80 100 120 140 160 TC [C] 10(11) DB-PIM-10.xls Technische Information / Technical Information BSM50GP120 IGBT-Module IGBT-Modules Schaltplan/ Circuit diagram 21 8 22 20 1 2 3 23 19 7 14 18 13 24 4 12 9 16 17 5 15 6 NTC 11 10 Gehauseabmessungen/ Package outlines Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 11(11) DB-PIM-10.xls Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact".