BZT52B2V4S-BZT52B75S
200mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
VZ Tolerance Selection of ±2%
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Min Max Min Max
Case : Flat lead SOD-323 small outline plastic package 1.15 1.35 0.045 0.053
2.30 2.70 0.091 0.106
0.25 0.40 0.010 0.016
1.60 1.80 0.063 0.071
0.80 1.00 0.031 0.039
0.05 0.20 0.002 0.008
Package
SOD-323F
Maximum Ratings
IF=10mA
Notes:1. Valid provided that electrodes are kept at ambient temperature
VBR : Voltage at IZK
IZK : Test current for voltage VBR
ZZK : Dynamic impedance at IZK
IZT : Test current for voltage VZ
VZ: Voltage at current IZT
ZZT : Dynamic impedance at IZT
IZM : Maximum steady state current
VZM : Voltage at IZM
SOD-323F
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
A
B
Unit (inch)
Dimensions
E
Packing
C
Features
Mechanical Data
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
Unit (mm)
Wide zener voltage range selection : 2.4V to 75V
Ordering Information
Part No.
D
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings and Electrical Characteristics
BZT52BxxS RR 3Kpcs / 7" Reel
F
High temperature soldering guaranteed: 260°C/10s
Polarity : Indicated by cathode band
Weight : 4.02±0.5 mg
Type Number
-65 to + 150
Value
200
Junction and Storage Temperature Range
Power Dissipation
Symbol Units
PD
VF
mW
Zener I vs. V Characteristics
V
Thermal Resistance (Junction to Ambient) (Note 1) RθJA 625 °C/W
Forward Voltage 1
TJ, TSTG °C
Voltage
Current
IF
VF
VR
IR
VBR
IZK
VZ
IZT
VZM
IZM
Forward RegionLeakage RegionBreakdownRegion
D
A
B
C
E
F
Version : B09
C11
BZT52B2V4S-BZT52B75S
200mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
Electrical Characteristics
Ta = 25°C unless otherwise noted
VF Forward Volatge = 1 V Maximum @ IF = 10mA for all part numbers
Device
Marking Min Nom Max
BZT52B2V4S 0Z 2.35 2.40 2.45 5 100 1 564 45 1
BZT52B2V7S 1Z 2.65 2.70 2.75 5 100 1 564 18 1
BZT52B3V0S 2Z 2.94 3.00 3.06 5 100 1 564 9 1
BZT52B3V3S 3Z 3.23 3.30 3.37 5 95 1 564 4.5 1
BZT52B3V6S 4Z 3.53 3.60 3.67 5 90 1 564 4.5 1
BZT52B3V9S 5Z 3.82 3.90 3.98 5 90 1 564 2.7 1
BZT52B4V3S 6Z 4.21 4.30 4.39 5 90 1 564 2.7 1
BZT52B4V7S 7Z 4.61 4.70 4.79 5 80 1 470 2.7 2.0
BZT52B5V1S 8Z 5.00 5.10 5.20 5 60 1 451 1.8 2.0
BZT52B5V6S 9Z 5.49 5.60 5.71 5 40 1 376 0.9 2.0
BZT52B6V2S AZ 6.08 6.20 6.32 5 10 1 141 2.7 4.0
BZT52B6V8S BZ 6.66 6.80 6.94 5 15 1 75 1.8 4.0
BZT52B7V5S CZ 7.35 7.50 7.65 5 15 1 75 0.9 5.0
BZT52B8V2S DZ 8.04 8.20 8.36 5 15 1 75 0.63 5.0
BZT52B9V1S EZ 8.92 9.10 9.28 5 15 1 94 0.45 6.0
BZT52B10S FZ 9.80 10.00 10.20 5 20 1 141 0.18 7.0
BZT52B11S GZ 10.78 11.00 11.22 5 20 1 141 0.09 8.0
BZT52B12S HZ 11.76 12.00 12.24 5 25 1 141 0.09 8.0
BZT52B13S JZ 12.74 13.00 13.26 5 30 1 160 0.09 8.0
BZT52B15S KZ 14.70 15.00 15.30 5 30 1 188 0.045 10.5
BZT52B16S LZ 15.68 16.00 16.32 5 40 1 188 0.045 11.2
BZT52B18S MZ 17.64 18.00 18.36 5 45 1 212 0.045 12.6
BZT52B20S NZ 19.60 20.00 20.40 5 55 1 212 0.045 14.0
BZT52B22S PZ 21.56 22.00 22.44 5 55 1 235 0.045 15.4
BZT52B24S RZ 23.52 24.00 24.48 5 70 1 235 0.045 16.8
BZT52B27S SZ 26.46 27.00 27.54 2 80 0.5 282 0.045 18.9
BZT52B30S TZ 29.40 30.00 30.60 2 80 0.5 282 0.045 21.0
BZT52B33S UZ 32.34 33.00 33.66 2 80 0.5 306 0.045 23.0
BZT52B36S VZ 35.28 36.00 36.72 2 90 0.5 329 0.045 25.2
BZT52B39S WZ 38.22 39.00 39.78 2 130 0.5 329 0.045 27.3
BZT52B43S XZ 42.14 43.00 43.86 2 150 0.5 353 0.045 30.1
BZT52B47S YZ 46.06 47.00 47.94 2 170 0.5 353 0.045 33.0
BZT52B51S －Z49.98 51.00 52.02 2 180 0.5 376 0.045 35.7
BZT52B56S ＝Z54.88 56.00 57.12 2 200 0.5 400 0.045 39.2
BZT52B62S ≡Z60.76 62.00 63.24 2 215 0.5 423 0.045 43.4
BZT52B68S ＞Z66.64 68.00 69.36 2 240 0.5 447 0.045 47.6
BZT52B75S ＜Z73.50 75.00 76.50 2 255 0.5 470 0.045 52.5
Notes:
1. The Zener Volta
g
e
(
V
Z
)
is tested under pulse condition of 10ms
.
2. The device numbers listed have a standard tolerance on the nominal zener volta
g
e o
f
±2%.
4. The Zener impedance is derived from the 60-cycle ac volatge, which results when an ac current having an
rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed to IZT or IZK.
ZZK @ IZK(Ω)
Max
VZ @ IZT (Volt) IR @ VR(μA)
Max
IZK(mA)IZT(mA) VR(V)
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and
tighter voltage tolerances, contact your nearest Taiwan semiconductor representative.
Part Number ZZT @ IZT(Ω)
Max
Version : B10
C11
BZT52B2V4S-BZT52B75S
200mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
1
10
100
1000
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Forward Current (mA)
0
0
1
10
100
0123456789101112
Zener Current (mA)
Ta=25°C
0
50
100
150
200
250
300
0 50 100 150 200
Power Dissipation (mW)
FIG 3 Zener Breakdown Characteristics
0
0
1
10
100
15 25 35 45 55 65 75
Zener Current (mA)
Ta=25°C
Ta=150°C
Ta=25°C
FIG 6 Effect of Zener Voltage on Impedence
1
10
100
1000
1 10 100
Dynamic Impedence (Ώ)
FIG 5 Typical Capacitance
1
10
100
1000
1 10 100
Capacitance(pF)
Bias at 50% of VZ(Nom)
1V Bias
Iz=20m
Iz=5mA
Iz=1mA
Zener Voltage (V)
Forward Voltage (V)
FIG 2 Zener Breakdown Characteristics
Zener Voltage (V)
FIG 4 Admissible Power Disspation Curve
Zener Voltage (V) Ambient Tempeture (°C)
Zener Voltage (V)
0.01
0.1
Version : B09
C11
