PRODUCT: ZEN056V175A12YM PolyZen DOCUMENT: SCD28847 REV LETTER: A REV DATE: OCTOBER 11, 2014 PAGE NO.: 1 OF 8 Polymer Enhanced Zener Diode Specification Status: RELEASED GENERAL DESCRIPTION BENEFITS TE PolyZen devices are polymer enhanced, precision Zener diode. They offer resettable protection against multi-Watt fault events without the need for multi-Watt heat sinks. PolyZen Zener diode was selected due to its relatively flat voltage vs current response. This helps improve output voltage clamping, even when input voltage is high and diode currents are large. An advanced feature of the PolyZen devices is that the Zener diode is thermally coupled to a resistively non-linear, polymer PTC (positive temperature coefficient) substrate. The PTC substrate is fully integrated into the device, and is electrically in series between VIN and the diode clamped VOUT. This advanced PTC substrate responds to either extended diode heating or overcurrent events by transitioning from a low to high resistance state, also known as "tripping". A tripped PTC will limit current and generate voltage drop. It helps to protect both the Zener diode and the follow-on electronics and effectively increases the diode's power handling capability. The polymer enhanced Zener diode helps protect sensitive portable electronics from damage caused by inductive voltage spikes, voltage transients, incorrect power supplies and reverse bias. These devices are particularly suitable for portable electronics and other low-power DC devices. Stable Zener diode helps shield downstream electronics from overvoltage and reverse bias Trip events shut out overvoltage and reverse bias sources Analog nature of trip events minimizes upstream inductive spikes Integrated protection on over current, over voltage, over temperature and ESD Minimal power dissipation requirements Single component placement FEATURES Overvoltage transient suppression Stable VZ vs fault current Time delayed, overvoltage trip Time delayed, reverse bias trip Multi-Watt power handling capability Integrated device construction RoHS Compliant TARGET APPLICATIONS DC power port protection in portable electronics DC power port protection for systems using barrel jacks for power input Internal overvoltage & transient suppression DC output voltage regulation TYPICAL APPLICATION BLOCK DIAGRAM Power Supply PolyZen Protected Electronics (External or Internal) VIN + 2 1 PolyZen Device GND VOUT 3 Regulated Output RLoad Protected downstream electronics PRODUCT: ZEN056V175A12YM PolyZen DOCUMENT: SCD28847 REV LETTER: A REV DATE: OCTOBER 11, 2014 PAGE NO.: 2 OF 8 Polymer Enhanced Zener Diode CONFIGURATION INFORMATION Pin Configuration (Top View) Block Diagram 2 GND 1 1 VIN 3 V2OUT PIN DESCRIPTION Pin Number 1 2 3 Pin Name VIN GND VOUT Pin Function VIN. Device input GND VOUT. Zener regulated voltage output MECHANICAL DIMMENSIONS Length A Width B Height C Min Typ mm (in) Max 3.00 (0.118) 2.30 (0.091) 1.10 (0.043) 3.20 (0.126) 2.50 (0.098) 1.20 (0.047) 3.40 (0.134) 2.70 (0.106) 1.30 (0.051) DEFINITION of TERMS IPTC IFLT IOUT Trip Event Trip Endurance Current flowing through the PTC portion of the circuit RMS fault current flowing through the diode Current flowing out the VOUT pin of the device A condition where the PTC transitions to a high resistance state, thereby significantly limiting IPTC and related currents. Time the PTC portion of the device remains in a high resistance state. IPTC, IHOLD IOUT VIN VOUT IFLT GND PRODUCT: ZEN056V175A12YM PolyZen DOCUMENT: SCD28847 REV LETTER: A REV DATE: OCTOBER 11, 2014 PAGE NO.: 3 OF 8 Polymer Enhanced Zener Diode GENERAL SPECIFICATIONS1-3, 12 (Typical unless otherwise specified) ELECTRICAL CHARACTERISTICS VZ4 (V) Leakage Current Min Max 5.35 5.85 Izt4 (A) Test Voltage (V) Max Current (mA) 5.25 10 0.1 IHOLD5 @20C (A) RTYP6 (Ohms) R1Max7 (Ohms) 1.75 0.050 0.095 VINT Max8 (V) Test VINT Current Max (V) (A) 12 4 MAXIMUM RATINGS VIN Max9 Peak pulse current IFLT Max10 VIN Max (V) Test Current (A) IFLT Max (A) Test voltage (V) 16 3 3 12 -12 -3 -40 -12 Note 1: Note 2: ESD withstand (IEC 61000-4-2) Temperature Tripped Power Dissipation11 Max 8/20 s pulse (IEC 61000-4-5) (A) Contact (KV) Air (KV) Operating (C) Storage (C) Value (W) Test Voltage (V) 150 +/- 30 +/- 30 -40 to +85 -40 to +85 1.0 12 Electrical characteristics determined at 25C unless otherwise specified. This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device and may affect performance to specifications. Performance impact will depend on multiple factors including, but not limited to, voltage, trip current, trip duration, trip cycles, load condition and circuit design. For details or ratings specific to your application contact TE Connectivity Circuit Protection Division directly. Note 3: Specifications developed using 1.0 ounce 0.045" wide copper traces on dedicated FR4 test boards. Performance in your application may vary. Note 4: Izt is the current at which Vz is measured (VZ = VOUT). Additional VZ values are available on request. Note 5: IHOLD: Maximum steady state current (current entering or exiting the VIN pin of the device) that will not generate a trip event at the specified temperature. Specification assumes IFLT (current flowing through the Zener diode) is sufficiently low so as to prevent the diode from acting as a heat source. Testing is conducted with an "open" Zener. Note 6: RTYP: Resistance between VIN and VOUT pins during normal operation at room temperature. Note 7: R1Max: The maximum resistance between VIN and VOUT pins at room temperature, one hour after first tripped event or after reflow soldering. Note 8: VINT Max: VINT Max is defined as the maximum voltage at which devices can be survived according to typical qualification process at the specified voltage and current. VINT Max testing is conducted using a "shorted" load (VOUT = 0 V). VINT Max is a survivability rating, not a performance rating. For performance ratings, see Note 2. Note 9: VIN Max: For practical application, Polyzen devices are polymer enhanced diode, it use the Polymer PTC technology to offer the diode resettable protection against continuous overvoltage fault events. VIN Max is defined as the maximum voltage rating of the whole device at which devices can be survived according to typical qualification process at specified voltage and current. Testing conducted with no load connected to VOUT. VIN Max is a survivability rating, not a performance rating. For performance ratings, see Note 2. Note 10: IFLT Max: Maximum RMS fault current the device can withstand and remain resettable. Specification is dependent on the direction of current flow through the device. RMS fault currents above IFLT Max may permanently damage the PolyZen device. Specification assumes IOUT = 0. Testing conducted with no load connected to VOUT. Note 11: The power dissipated by the device when in the "tripped" state, as measured on TE test boards (see note 3). Note 12: Specifications based on limited qualification data and subject to change. PRODUCT: ZEN056V175A12YM PolyZen Polymer Enhanced Zener Diode RECOMMENDED PAD DIMENSIONS (mm) RECOMMENDED PAD LAYOUT (mm) RECOMMENDED SOLDER REFLOW PROFILE Classification Reflow Profiles Profile Feature Pb-Free Assembly Average Ramp-up Rate (Ts Max to Tp) 3 C/second max Average Ramp-down Rate (Tp to T L ) 6 C/second max Preheat * Temperature Min (Ts Min) 150 C * Temperature Max (Ts Max) 200 C * Time (ts Preheat) 60-180 seconds Time maintained above: * Temperature (T L ) 217 C * Time (t L ) 60-150 seconds Peak / Classification Temperature * Temperature (T p) DOCUMENT: SCD28847 REV LETTER: A REV DATE: OCTOBER 11, 2014 PAGE NO.: 4 OF 8 260 C Time within 5 C of actual peak * Time (t p ) 20-40 seconds Time 25 C to peak Temperature 8 minutes max PRODUCT: ZEN056V175A12YM PolyZen Polymer Enhanced Zener Diode TYPICAL DEVICE CHARACTERISTICS DOCUMENT: SCD28847 REV LETTER: A REV DATE: OCTOBER 11, 2014 PAGE NO.: 5 OF 8 PRODUCT: ZEN056V175A12YM PolyZen Polymer Enhanced Zener Diode DOCUMENT: SCD28847 REV LETTER: A REV DATE: OCTOBER 11, 2014 PAGE NO.: 6 OF 8 PRODUCT: ZEN056V175A12YM PolyZen Polymer Enhanced Zener Diode DOCUMENT: SCD28847 REV LETTER: A REV DATE: OCTOBER 11, 2014 PAGE NO.: 7 OF 8 PACKAGING Packaging ZEN056V175A12YM REEL DIMENSIONS (mm) TAPE DIMENSIONS (mm) Tape & Reel 3,000 Standard Box 30,000 PRODUCT: ZEN056V175A12YM PolyZen Polymer Enhanced Zener Diode DOCUMENT: SCD28847 REV LETTER: A REV DATE: OCTOBER 11, 2014 PAGE NO.: 8 OF 8 DEVICE MARKINGS INFORMATION Markings 0517F Vz 5.6V Hold current 1.75A Special code F MATERIALS INFORMATION ROHS Compliant ELV Compliant Pb-Free Halogen Free* HF * Halogen Free refers to: Br900ppm, Cl900ppm, Br+Cl1500ppm. All information, including illustrations, is believed to be accurate and reliable. Users, however, should independently evaluate the suitability of and test each product selected for their application. Tyco Electronics Corporation and/or its Affiliates in the TE Connectivity Ltd. family of companies ("TE") makes no warranties as to the accuracy or completeness of the information, and disclaims any liability regarding its use. TE's only obligations are those in the TE Standard Terms and Conditions of Sale and in no case will TE be liable for any incidental, indirect, or consequential damages arising from the sale, resale, use, or misuse of its products. Specifications are subject to change without notice. In addition, TE reserves the right to make changes to materials or processing that do not affect compliance with any applicable specification without notification to Buyer. Without express written consent by an officer of TE, TE does not authorize the use of any of its products as components in nuclear facility applications, aerospace, or in critical life support devices or systems. (c) 2014 Tyco Electronics Corporation, a TE Connectivity Ltd. company. All rights reserved. Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: TE Connectivity: ZEN056V175A12YM