DATA SH EET
Product specification
Supersedes data of 1996 Sep 10 2002 Jan 23
DISCRETE SEMICONDUCTORS
BAS32L
High-speed diode
b
ook, halfpage
M3D238
2002 Jan 23 2
Philips Semiconductors Product specification
High-speed diode BAS32L
FEATURES
•Small hermetically sealed glass
SMD package
•High switching speed: max. 4 ns
•Continuous reverse voltage:
max. 75 V
•Repetitive peak reverse voltage:
max. 100 V
•Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
•High-speed switching
•Fast logic applications.
DESCRIPTION
The BAS32L is a high-speed switching diode fabricated in planar technology,
and encapsulated in the small hermetically sealed glass SOD80C SMD
package.
Fig.1 Simplified outline (SOD80C) and symbol.
The marking band indicates the cathode.
handbook, 4 columns
MAM061
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage −100 V
VRcontinuous reverse voltage −75 V
IFcontinuous forward current see Fig.2; note 1 −200 mA
IFRM repetitive peak forward current −450 mA
IFSM non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs−4A
t=1ms −1A
t=1s −0.5 A
Ptot total power dissipation Tamb =25°C; note 1 −500 mW
Tstg storage temperature −65 +200 °C
Tjjunction temperature −200 °C
2002 Jan 23 3
Philips Semiconductors Product specification
High-speed diode BAS32L
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage see Fig.3
IF= 5 mA 620 750 mV
IF= 100 mA −1000 mV
IF= 100 mA; Tj= 100 °C−930 mV
IRreverse current see Fig.5
VR=20V −25 nA
VR=75V −5µA
V
R=20V; T
j= 150 °C−50 µA
VR=75V; T
j= 150 °C−100 µA
V(BR)R reverse breakdown voltage IR= 100 µA 100 −V
Cddiode capacitance f = 1 MHz; VR= 0; see Fig.6 2 pF
trr reverse recovery time when switched from IF= 10 mA to
IR= 10 mA; RL= 100 Ω; measured
at IR= 1 mA; see Fig.7
4ns
V
fr forward recovery voltage when switched from IF= 50 mA;
tr=20 ns; see Fig.8 −2.5 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 300 K/W
Rth j-a thermal resistance from junction to ambient note 1 350 K/W
2002 Jan 23 4
Philips Semiconductors Product specification
High-speed diode BAS32L
GRAPHICAL DATA
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
Device mounted on an FR4 printed-circuit board.
handbook, halfpage
0 100 200
300
200
0
100
MBG451
Tamb (oC)
IF
(mA)
Fig.3 Forward current as a function of
forward voltage.
handbook, halfpage
012
600
0
200
400
MBG464
VF (V)
IF
(mA)
(1) (2) (3)
(1) Tj= 175 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj=25°C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
2002 Jan 23 5
Philips Semiconductors Product specification
High-speed diode BAS32L
Fig.5 Reverse current as a function of
junction temperature.
handbook, halfpage
0 100 Tj (oC) 200
103
102
10−1
10−2
10 (1) (2)
1
IR
(µA)
MGD006
(3)
(1) VR= 75 V; maximum values.
(2) VR= 75 V; typical values.
(3) VR= 20 V; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
01020
1.2
1.0
0.6
0.4
0.8
MGD004
VR (V)
Cd
(pF)
2002 Jan 23 6
Philips Semiconductors Product specification
High-speed diode BAS32L
Fig.7 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR= 1 mA.
Fig.8 Forward recovery voltage test circuit and waveforms.
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
2002 Jan 23 7
Philips Semiconductors Product specification
High-speed diode BAS32L
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
Note
1. The marking band indicates the cathode.
SOD80C 100H01 97-06-20
Hermetically sealed glass surface mounted package; 2 connectors SOD80C
UNIT D
mm 1.60
1.45 3.7
3.3 0.3
HL
DIMENSIONS (mm are the original dimensions)
H
D
LL
(1)
0 1 2 mm
scale
ka
2002 Jan 23 8
Philips Semiconductors Product specification
High-speed diode BAS32L
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyofthese products,conveys nolicence ortitle
under any patent, copyright, or mask work right to these
products,and makes norepresentationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 Jan 23 9
Philips Semiconductors Product specification
High-speed diode BAS32L
NOTES
2002 Jan 23 10
Philips Semiconductors Product specification
High-speed diode BAS32L
NOTES
2002 Jan 23 11
Philips Semiconductors Product specification
High-speed diode BAS32L
NOTES
© Koninklijke Philips Electronics N.V. 2002 SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613514/03/pp12 Date of release: 2002 Jan 23 Document order number: 9397 750 09264
