050-7090 Rev C 5-2006
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
APT8020JFLL
800V 33A 0.220ΩΩ
ΩΩ
Ω
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg • Popular SOT-227 Package
•FAST RECOVERY BODY DIODE
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
POWER MOS 7 R FREDFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 16.5A)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
UNIT
Volts
Ohms
µA
nA
Volts
MIN TYP MAX
800
0.220
250
1000
±100
35
APT8020JFLL
800
33
132
±30
±40
520
4.16
-55 to 150
300
33
50
3000
SOT-227
ISOTOP
fi
file # E145592
"UL Recognized"
GS
S
D
Microsemi Website - http://www.microsemi.com
050-7090 Rev C 5-2006
DYNAMIC CHARACTERISTICS APT8020JFLL
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
SINGLE PULSE
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -33A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -33A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -33A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -33A, di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
MIN TYP MAX
33
132
1.3
18
Tj = 25°C 320
Tj = 125°C 650
Tj = 25°C 1.4
Tj = 125°C 5.9
Tj = 25°C 10.8
Tj = 125°C 18.9
Symbol
RθJC
RθJA
MIN TYP MAX
0.24
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 400V
ID = 33A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 400V
ID = 33A @ 25°C
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 533V, VGS = 15V
ID = 33A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 533V, VGS = 15V
ID = 33A, RG = 5Ω
MIN TYP MAX
5200
1000
190
195
27
130
12
14
39
10
760
715
1250
780
UNIT
pF
nC
ns
µJ
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 5.51mH, RG = 25Ω, Peak IL = 33A
5dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID33A di/dt ≤ 700A/µs VR ≤ 800V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and inforation contained herein.
050-7090 Rev C 5-2006
APT8020JFLL
Typical Performance Curves
VGS=10V
VGS=20V
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE BVDSS, DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)
(NORMALIZED) VOLTAGE (NORMALIZED)
0 5 10 15 20 25 30
0 2 4 6 8 10 0 10 20 30 40 50 60 70 80
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
100
80
60
40
20
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
5.5V
6V
6.5V
7V
5V
VGS =15 &10 V 8V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
NORMALIZED TO
VGS = 10V @ ID = 16.5A
120
100
80
60
40
20
0
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
ID = 16.5A
VGS = 10V
0.0528 0.0651 0.123
0.0203 0.173 0.490
Dissipated Power
(Watts)
TJ (C) TC (C)
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
ZEXT
050-7090 Rev C 5-2006
APT8020JFLL
ID (A) ID (A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A) RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
VDD = 533V
RG = 5Ω
TJ = 125°C
L = 100µH
Eon
Eoff
tr
tf
SWITCHING ENERGY (µJ) td(on) and td(off) (ns)
SWITCHING ENERGY (µJ) tr and tf (ns)
10 20 30 40 50 60 10 20 30 40 50 60
10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50
VDD = 533V
ID = 38A
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
td(on)
td(off)
Eon Eoff
200
180
160
140
120
100
80
60
40
20
0
2500
2000
1500
1000
500
0
VDD = 533V
RG = 5Ω
TJ = 125°C
L = 100µH
VDD = 533V
RG = 5Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 10 100 800 0 10 20 30 40 50
0 50 100 150 200 250 0.3 0.5 0.7 0.9 1.1 1.3 1.5
132
100
50
10
1
16
12
8
4
0
20,000
10,000
1,000
100
200
100
10
1
Crss
Ciss
Coss
TJ
=+150°C
TJ
=+25°C
VDS=400V
VDS=160V
VDS=640V
ID = 33A
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
10mS
1mS
100µS
100
80
60
40
20
0
5000
4000
3000
2000
1000
0
050-7090 Rev C 5-2006
APT8020JFLL
Typical Performance Curves
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source Drain
Gate
*
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP®
is a registered trademark of ST Microelectronics NV.
Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions
I
D
D.U.T.
V
DS
Figure 20, Inductive Switching Test Circuit
V
DD
G
APT30DF100
Drain Current
Drain Voltage
Gate Voltage
TJ125°C
Switching Energy
10%
td(on)
90%
5%
tr
5%
10%
Switching Energy
Drain Current
Drain Voltage
Gate Voltage TJ125°C
10%
0
td(off)
90%
90%
tf
