N-Channel MOSFET 500V, 18.0 A, 0.27 General Description Features The MDP/F18N50B uses advanced Magnachip's MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. VDS = 500V ID = 18.0A RDS(ON) 0.27 MDP/F18N50B is suitable device for SMPS, HID and general purpose applications. Applications @VGS = 10V @VGS = 10V Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Drain-Source Voltage VDSS Gate-Source Voltage TC=25 C Continuous Drain Current ID o TC=100 C (1) IDM o TC=25 C Power Dissipation o Derate above 25 C (1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt (3) (4) Single Pulse Avalanche Energy Junction and Storage Temperature Range PD MDF18N50B Unit 500 VGSS o Pulsed Drain Current MDP18N50B V 30 V 18 18* A 11 11* A 72 72* A 236 37 W 1.89 0.29 W/ C o EAR 23.6 mJ dv/dt 4.5 V/ns EAS 950 mJ TJ, Tstg -55~150 o C Id limited by maximum junction temperature Thermal Characteristics Characteristics Symbol MDP18N50B MDF18N50B (1) RJA 62.5 62.5 RJC 0.53 3.4 Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Dec 2011. Version 1.0 (1) 1 Unit o C/W MagnaChip Semiconductor Ltd. MDP1850B / MDF18N50B N-channel MOSFET 500V MDP18N50B / MDF18N50B Part Number Temp. Range Package Packing RoHS Status o TO-220 Tube Halogen Free o TO-220F Tube Halogen Free MDP18N50BTH -55~150 C MDF18N50BTH -55~150 C Electrical Characteristics (Ta = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 500 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 - 4.0 IDSS VDS = 500V, VGS = 0V - - 1 A Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance IGSS V VGS = 30V, VDS = 0V - - 100 nA RDS(ON) VGS = 10V, ID = 9A - 0.22 0.27 gfs VDS = 40V, ID = 9A - 13 - S - 48 - - 10 - - 15 - - 2490 - - 13 - Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 400V,ID = 18.0A,VGS = 10V (3) Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss - 307 - Turn-On td(on) - 32 - Delay Time Rise Time Turn-Off Delay Time Fall Time tr VDS = 25V, VGS = 0V, f = 1.0MHz nC pF - 82 - - 222 - tf - 75 - IS - 18 - A - - 1.4 V - 375 - ns - 4.2 - C td(off) VGS = 10V, VDS = 250V, ID = 18.0A, (3) RG = 25 ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 18.0A, VGS = 0V IF = 18.0A, dl/dt = 100A/s (3) Note : 1. Pulse width is based on RJC & RJA and the maximum allowed junction temperature of 150C. 2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150C. 3. ISD 18.0A, di/dt200A/us, VDDBVDSS, Rg =25, Starting TJ=25C 4. L=5.3mH, IAS=18.0A, VDD=50V, , Rg =25, Starting TJ=25C Dec 2011. Version 1.0 2 MagnaChip Semiconductor Ltd. MDP1850B / MDF18N50B N-channel MOSFET 500V Ordering Information 0.6 Vgs=5.0V =5.5V =6.0V =7.0V =8.0V =10.0V =15.0V 30 0.5 R D S (O N ) [ ] ID,Drain Current [A] 25 Notes 1. 250? Pulse Test 2. TC=25? 20 15 VGS=10.0V 0.4 VGS=20V 10 5 0.3 0 0 5 10 15 20 25 10 15 20 25 VDS,Drain-Source Voltage [V] 35 BVDSS, (Normalized) Drain-Source Breakdown Voltage Notes : 1. VGS = 10 V 2. ID = 5.0A 2.5 2.0 1.5 1.0 0.5 0.0 -50 50 55 0 50 100 150 Notes : 1. VGS = 0 V 2. ID = 250 1.1 1.0 0.9 0.8 -50 200 0 50 100 o TJ, Junction Temperature [ C] Notes : 1. VGS = 0 V 2.250s Pulse test IDR Reverse Drain Current [A] * Notes ; 1. Vds=30V 10 150 -55 1 25 0.1 4 5 6 7 10 150 25 1 0.1 0.2 8 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Dec 2011. Version 1.0 200 Fig.4 Breakdown Voltage Variation vs. Temperature 100 3 150 o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature I D (A ) 45 1.2 3.0 2 40 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics RDS(ON), (Normalized) Drain-Source On-Resistance 30 ID,Drain Current [A] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDP1850B / MDF18N50B N-channel MOSFET 500V 35 MDP1850B / MDF18N50B N-channel MOSFET 500V 10 100V 250V 8 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 5000 Note : ID = 18.0A Coss 400V Capacitance [pF] 4000 6 4 2 Notes ; 1. VGS = 0 V 2. f = 1 MHz Ciss 3000 2000 1000 Crss 0 0 0 10 20 30 40 1 50 Fig.7 Gate Charge Characteristics 2 20 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 10 10 10 Fig.8 Capacitance Characteristics 10 s 100 s 1 ms 10 ms 100 ms DC 1 18 16 ID, Drain Current [A] 10 0 -1 14 12 10 -1 6 2 -2 10 8 4 Single Pulse TJ=Max rated TC=25 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 10 0 10 1 10 0 25 2 50 75 100 Fig.9 Maximum Safe Operating Area MDP18N50B (TO-220) 30000 0 single Pulse RthJC = 0.53/W TC = 25 27000 24000 D=0.5 21000 Power (W) Z JC(t), Thermal Response 150 Fig.10 Maximum Drain Current vs. Case Temperature 10 0.2 -1 10 0.1 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC R JC=0.53/W 0.02 0.01 -5 15000 12000 single pulse 6000 3000 -2 10 18000 9000 0.05 10 125 TC, Case Temperature [] VDS, Drain-Source Voltage [V] -4 10 -3 10 -2 10 -1 10 0 10 0 1E-5 1 10 t1, Rectangular Pulse Duration [sec] 1E-3 0.01 0.1 1 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation - MDP18N50B (TO-220) Fig.11 Transient Thermal Response Curve MDP18N50B (TO-220) Dec 2011. Version 1.0 1E-4 4 MagnaChip Semiconductor Ltd. 12000 2 10 1 10 0 10 10 s 100 s 1 ms 10 ms 100 ms DC single Pulse RthJC = 3.4/W TC = 25 9000 Power (W) ID, Drain Current [A] Operation in This Area is Limited by R DS(on) 6000 3000 -1 Single Pulse TJ=Max rated TC=25 10 0 1E-5 -2 10 -1 10 0 1 10 10 2 1E-4 1E-3 0.01 0.1 1 Pulse Width (s) VDS, Drain-Source Voltage [V] Fig.14 Single Pulse Maximum Power Dissipation - MDF13N50B (TO-220F) Fig.13 Maximum Safe Operating Area MDF13N50B (TO-220F) 1 10 Z JC(t), Thermal Response D=0.5 0 10 0.2 0.1 -1 10 0.05 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC R JC=3.4/W 0.02 0.01 single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] Fig.15 Transient Thermal Response Curve MDF13N50B (TO-220F) Dec 2011. Version 1.0 5 MagnaChip Semiconductor Ltd. MDP1850B / MDF18N50B N-channel MOSFET 500V 10 MDP1850B / MDF18N50B N-channel MOSFET 500V Physical Dimensions 3 Leads, TO-220 Dimensions are in millimeters unless otherwise specified Dec 2011. Version 1.0 6 MagnaChip Semiconductor Ltd. MDP1850B / MDF18N50B N-channel MOSFET 500V Physical Dimension 3 Leads, TO-220F Dimensions are in millimeters unless otherwise specified Symbol A b b1 C D E e F G L L1 Q Q1 R Dec 2011. Version 1.0 Min 4.50 0.63 1.15 0.33 15.47 9.60 Nom Max 4.93 0.91 1.47 0.63 16.13 10.71 2.54 2.34 6.48 12.24 2.79 2.52 3.10 3.00 2.84 6.90 13.72 3.67 2.96 3.50 3.55 7 MagnaChip Semiconductor Ltd. U.S.A Sunnyvale Office 787 N. 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Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. \ MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Dec 2011. Version 1.0 8 MagnaChip Semiconductor Ltd. MDP1850B / MDF18N50B N-channel MOSFET 500V Worldwide Sales Support Locations