HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Feb. 04. 2004 Preliminary feb. 07. 2005 Preliminary 1) Add Errata tDS tWC tR 0 10 25 0 10 20 50 25us 5 15 45 5 15 25 70 27us Case tRC tRP tREH tREA Read(all) 50 20 20 30 50 20 20 30 60 25 30 30 tCLS Specification Relaxed value Specification 0.1 Except for Relaxed value ID Read ID Read tCLH tWP tALS tALH 2) Add note.4(table14) 3) Add application note(Power on/off Sequence & Auto sleep mode) - Texts & figures are added. 1) Change AC parameters Before 0.2 Afer case tDH x8 10 x16 15 x8, x16 15 Mar. 03. 2005 Preliminary 2) Add tADL(=100ns) parameters 3) Add Muliti Die Concurrent Operations and Extended Read Status - Texts and table are added. 4) Edit Table.8 Rev 0.7 / Nov. 2005 1 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Revision History -Continued- Revision No. History Draft Date Remark Apr. 01. 2005 Preliminary Apr. 06. 2005 Preliminary 1) Change Errata - Errata values (tWP & tWC) are changed 0.3 tCLS tCLH tWP tALS tALH tDS tWC tR 5 15 45 5 15 25 70 25us 5 15 40 5 15 25 60 27us Before After 1) Correct AC Timing Characteristics Table - Errata value is eddited. - tADL(max) is changed to tADL(min). 2) Change Errata - tREA is deleted from the Errata Case Except for Before 0.4 After ID Read ID Read Read(all) tRC tRP tREH 50 20 20 60 25 30 60 25 30 3) Edit Pin Description table 4) Edit Data Protection texts 5) Add Read ID table 6) Add tOH parameter - tOH = 15ns (min.) 7) Add Marking Information 8) Correct Application note.2 - tCS(2us) is changed to 100ns. 1) Correct the test Conditions (DC Characteristics table) 0.5 Test Conditions (ICC1) Test Conditions (ILI, ILO) Before tRC=50ns, CE#=VIL, IOUT=0mA VIN=VOUT=0 to 3.6V After tRC(1.8V=60ns,3.3V=50ns) CE#=VIL, IOUT=0mA VIN=VOUT=0 to Vcc (max) Oct. 19. 2005 2) Change AC Conditions table 3) Add tWW parameter ( tWW = 100ns, min) - Texts & Figures are added. - tWW is added in AC timing characteristics table. 4) Edit System Interface Using CE don't care Figures. 5) Correct Address Cycle Map. Rev 0.7 / Nov. 2005 2 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Revision History -Continued- Revision No. History Draft Date Remark Aug. 22. 2005 Preliminary 1) Correct PKG dimension (TSOP PKG) CP Before 0.050 After 0.100 2) Add tRBSY (Table 12) - tRBSY (Dummy Busy Time for Cache Read) 0.6 - tRBSY is 5us (typ.) 3) Delete Errata 4) Change AC Characteristics Before After tRC tRP tREH 60 25 30 60 40 30 50 25 20 1) Change Ac Characteristics 0.7 Before After Rev 0.7 / Nov. 2005 tRC tRP tREH Read ID 60 40 30 Data Read 50 25 20 Read ID 60 25 30 Data Read 50 25 20 Nov. 04. 2005 3 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities CACHE PROGRAM MODE - Internal Cache Register to improve the program throughput FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER SUPPLY VOLTAGE - 3.3V device: VCC = 2.7 to 3.6V : HY27UHXX4G2M - 1.8V device: VCC = 1.7 to 1.95V : HY27SHXX4G2M ELECTRONIC SIGNATURE - Manufacturer Code - Device Code Memory Cell Array = (2K+ 64) Bytes x 64 Pages x 4,096 Blocks CHIP ENABLE DON'T CARE OPTION - Simple interface with microcontroller = (1K+32) Words x 64 pages x 4,096 Blocks PAGE SIZE - x8 device : (2K + 64 spare) Bytes : HY27(U/S)H084G2M AUTOMATIC PAGE 0 READ AT POWER-UP OPTION - Boot from NAND support - Automatic Memory Download SERIAL NUMBER OPTION - x16 device: (1K + 32 spare) Words : HY27(U/S)H164G2M HARDWARE DATA PROTECTION - Program/Erase locked during Power transitions BLOCK SIZE - x8 device: (128K + 4K spare) Bytes - x16 device: (64K + 2K spare) Words PAGE READ / PROGRAM - Random access: 27us (max.) - Sequential access: 60ns (min.) - Page program time: 300us (typ.) DATA INTEGRITY - 100,000 Program/Erase cycles - 10 years Data Retention PACKAGE - HY27(U/S)H(08/16)4G2M-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm) - HY27(U/S)H(08/16)4G2M-T (Lead) - HY27(U/S)H(08/16)4G2M-TP (Lead Free) COPY BACK PROGRAM MODE - Fast page copy without external buffering Rev 0.7 / Nov. 2005 4 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 1. SUMMARY DESCRIPTION The HYNIX HY27(U/S)H(08/16)4G2M series is a 512Mx8bit with spare 8Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 4096 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells. A program operation allows to write the 2112-byte page in typical 300us and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) block. Data in the page mode can be read out at 60ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. This interface allows a reduced pin count and easy migration towards different densities, without any rearrangement of footprint. Commands, Data and Addresses are synchronously introduced using CE#, WE#, ALE and CLE input pin. The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. The modifying can be locked using the WP# input pin. The output pin RB# (open drain buffer) signals the status of the device during each operation. In a system with multiple memories the RB# pins can be connected all together to provide a global status signal. Even the write-intensive systems can take advantage of the HY27(U/S)H(08/16)4G2M extended reliability of 100K program/erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm. Optionally the chip could be offered with the CE# don't care function. This option allows the direct download of the code from the NAND Flash memory device by a microcontroller, since the CE# transitions do not stop the read operation. The copy back function allows the optimization of defective blocks management: when a page program operation fails the data can be directly programmed in another page inside the same array section without the time consuming serial data insertion phase. The cache program feature allows the data insertion in the cache register while the data register is copied into the flash array. This pipelined program operation improves the program throughput when long files are written inside the memory. A cache read feature is also implemented. This feature allows to dramatically improve the read throughput when consecutive pages have to be streamed out. This device includes also extra features like OTP/Unique ID area, Automatic Read at Power Up, Read ID2 extension. The HYNIX HY27(U/S)H(08/16)4G2M series is available in 48 - TSOP1 12 x 20 mm. 1.1 Product List PART NUMBER ORIZATION HY27SH084G2M x8 HY27SH164G2M x16 HY27UH084G2M x8 HY27UH164G2M x16 Rev 0.7 / Nov. 2005 VCC RANGE PACKAGE 1.70 - 1.95 Volt 48TSOP1 2.7V - 3.6 Volt 5 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 9&& &( ,2a,2 ,2a,2 [2QO\ :( 5% 5( $/( &/( :3 35( 966 Figure1: Logic Diagram IO15 - IO8 Data Input / Outputs (x16 only) IO7 - IO0 Data Input / Outputs CLE Command latch enable ALE Address latch enable CE# Chip Enable RE# Read Enable WE# Write Enable WP# Write Protect RB# Ready / Busy Vcc Power Supply Vss Ground NC No Connection PRE Power-On Read Enable Table 1: Signal Names Rev 0.7 / Nov. 2005 6 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 1& 1& 1& 1& 1& 1& 5% 5( &( 1& 1& 9FF 9VV 1& 1& &/( $/( :( :3 1& 1& 1& 1& 1& 1$1')ODVK 7623 [ 1& 1& 1& 1& ,2 ,2 ,2 ,2 1& 1& 35( 9FF 9VV 1& 1& 1& ,2 ,2 ,2 ,2 1& 1& 1& 1& 1& 1& 1& 1& 1& 1& 5% 5( &( 1& 1& 9FF 9VV 1& 1& &/( $/( :( :3 1& 1& 1& 1& 1& 1$1')ODVK 7623 [ 9VV ,2 ,2 ,2 ,2 ,2 ,2 ,2 ,2 1& 35( 9FF 1& 1& 1& ,2 ,2 ,2 ,2 ,2 ,2 ,2 ,2 9VV Figure 2. 48TSOP1 Contactions, x8 and x16 Device Rev 0.7 / Nov. 2005 7 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 1.2 PIN DESCRIPTION Pin Name Description IO0-IO7 IO8-IO15(1) DATA INPUTS/OUTPUTS The IO pins allow to input command, address and data and to output data during read / program operations. The inputs are latched on the rising edge of Write Enable (WE#). The I/O buffer float to High-Z when the device is deselected or the outputs are disabled. CLE COMMAND LATCH ENABLE This input activates the latching of the IO inputs inside the Command Register on the Rising edge of Write Enable (WE#). ALE ADDRESS LATCH ENABLE This input activates the latching of the IO inputs inside the Address Register on the Rising edge of Write Enable (WE#). CE# CHIP ENABLE This input controls the selection of the device. When the device is busy CE# low does not deselect the memory. WE# WRITE ENABLE This input acts as clock to latch Command, Address and Data. The IO inputs are latched on the rise edge of WE#. RE# READ ENABLE The RE# input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge of RE# which also increments the internal column address counter by one. WP# WRITE PROTECT The WP# pin, when Low, provides an Hardware protection against undesired modify (program / erase) operations. RB# READY BUSY The Ready/Busy output is an Open Drain pin that signals the state of the memory. VCC SUPPLY VOLTAGE The VCC supplies the power for all the operations (Read, Write, Erase). VSS GROUND NC NO CONNECTION PRE To Enable and disable the Power On Auto Read. When PRE is a logic high, Power-On Auto-Read mode are enabled, and when PRE is a logic low, Power-On Auto-Read mode are disabled. Power-On Auto-Read mode is available only on 3.3V device. Not using POWER-ON AUTO-READ, connect it Vss or leave it N.C Table 2: Pin Description NOTE: 1. For x16 version only 2. A 0.1uF capacitor should be connected between the VCC Supply Voltage pin and the VSS Ground pin to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during program and erase operations. Rev 0.7 / Nov. 2005 8 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash IO0 IO1 IO2 IO3 IO4 IO5 IO6 IO7 1st Cycle A0 A1 A2 A3 A4 A5 A6 A7 2nd Cycle A8 A9 A10 A11 L (1) (1) (1) L L(1) 3rd Cycle A12 A13 A14 A15 A16 A17 A18 A19 4th Cycle A20 A21 A22 A23 A24 A25 A26 A27 5th Cycle A28 A29 L(1) (1) (1) (1) (1) L L(1) L L L L Table 3: Address Cycle Map(x8) NOTE: 1. L must be set to Low. IO0 IO1 IO2 IO3 IO4 IO5 IO6 IO7 IO8-IO15 1st Cycle A0 A1 A2 A3 A4 A5 A6 A7 L(1) 2nd Cycle A8 A9 A10 L(1) L(1) L(1) L(1) L(1) L(1) 3rd Cycle A11 A12 A13 A14 A15 A16 A17 A18 L(1) 4th Cycle A19 A20 A21 A22 A23 A24 A25 A26 L(1) 5th Cycle A27 A28 L(1) L(1) L(1) L(1) L(1) L(1) L(1) Table 4: Address Cycle Map(x16) NOTE: 1. L must be set to Low. FUNCTION 1st CYCLE 2nd CYCLE 3rd CYCLE READ 1 00h 30h - READ FOR COPY-BACK 00h 35h - READ ID 90h - - RESET FFh - - PAGE PROGRAM (start) 80h 10h - COPY BACK PGM (start) 85h 10h - CACHE PROGRAM 80h 15h - BLOCK ERASE 60h D0h - READ STATUS REGISTER 70h - - RANDOM DATA INPUT 85h - - RANDOM DATA OUTPUT 05h E0h - CACHE READ START 00h 31h - CACHE READ EXIT 34h - - 72h/73h/74h/75h - - EXTENDED READ STATUS Acceptable command during busy Yes Yes Yes Table 5: Command Set Rev 0.7 / Nov. 2005 9 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash CLE ALE CE# WE# RE# WP# H L L Rising H X L H L Rising H X H L L Rising H H L H L Rising H H L L L Rising H H Data Input L (1) H Falling X Sequential Read and Data Output L L MODE Read Mode Write Mode Command Input Address Input(5 cycles) Command Input Address Input(5 cycles) L L L H H X During Read (Busy) X X X X X H During Program (Busy) X X X X X H During Erase (Busy) X X X X X L Write Protect X X H X X 0V/Vcc Stand By Table 6: Mode Selection NOTE: 1. With the CE# don't care option CE# high during latency time does not stop the read operation Rev 0.7 / Nov. 2005 10 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 2. BUS OPERATION There are six standard bus operations that control the device. These are Command Input, Address Input, Data Input, Data Output, Write Protect, and Standby. Typically glitches less than 5 ns on Chip Enable, Write Enable and Read Enable are ignored by the memory and do not affect bus operations. 2.1 Command Input. Command Input bus operation is used to give a command to the memory device. Command are accepted with Chip Enable low, Command Latch Enable High, Address Latch Enable low and Read Enable High and latched on the rising edge of Write Enable. Moreover for commands that starts a modifying operation (write/erase) the Write Protect pin must be high. See figure 4 and table 13 for details of the timings requirements. Command codes are always applied on IO7:0, disregarding the bus configuration (X8/X16). 2.2 Address Input. Address Input bus operation allows the insertion of the memory address. To insert the 29(x8 device) addresses needed to access the 4Gbit 5 cycles are needed. Addresses are accepted with Chip Enable low, Address Latch Enable High, Command Latch Enable low and Read Enable high and latched on the rising edge of Write Enable. Moreover for commands that starts a modify operation (write/erase) the Write Protect pin must be high. See figure 5 and table 13 for details of the timings requirements. Addresses are always applied on IO7:0, disregarding the bus configuration (x8/ x16). 2.3 Data Input. Data Input bus operation allows to feed to the device the data to be programmed. The data insertion is serially and timed by the Write Enable cycles. Data are accepted only with Chip Enable low, Address Latch Enable low, Command Latch Enable low, Read Enable High, and Write Protect High and latched on the rising edge of Write Enable. See figure 6 and table 13 for details of the timings requirements. 2.4 Data Output. Data Output bus operation allows to read data from the memory array and to check the status register content, the lock status and the ID data. Data can be serially shifted out toggling the Read Enable pin with Chip Enable low, Write Enable High, Address Latch Enable low, and Command Latch Enable low. See figures 7,9,10 and table 13 for details of the timings requirements. 2.5 Write Protect. Hardware Write Protection is activated when the Write Protect pin is low. In this condition modify operation do not start and the content of the memory is not altered. Write Protect pin is not latched by Write Enable to ensure the protection even during the power up. 2.6 Standby. In Standby mode the device is deselected, outputs are disabled and Power Consumption is reduced. Rev 0.7 / Nov. 2005 11 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 3. DEVICE OPERATION 3.1 Page Read. Upon initial device power up, the device defaults to Read mode. This operation is also initiated by writing 00h and 30h to the command register along with five address cycles. In two consecutive read operations, the second one doesn't' need 00h command, which five address cycles and 30h command initiates that operation. Two types of operations are available : random read, serial page read. The random read mode is enabled when the page address is changed. The 2112 bytes (X8 device) or 1056 words (X16 device) of data within the selected page are transferred to the data registers in less than 27us (tR). The system controller may detect the completion of this data transfer (tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be read out in 60ns cycle time by sequentially pulsing RE#. The repetitive high to low transitions of the RE# clock make the device output the data starting from the selected column address up to the last column address. The device may output random data in a page instead of the consecutive sequential data by writing random data output command. The column address of next data, which is going to be out, may be changed to the address which follows random data output command. Random data output can be operated multiple times regardless of how many times it is done in a page. 3.2 Page Program. The device is programmed basically by page, but it does allow multiple partial page programming of a word or consecutive bytes up to 2112 (X8 device) or words up to 1056 (X16 device), in a single page program cycle. The number of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed 4 times for main array (X8 device:1time/512byte, X16 device:1time/256word) and 4 times for spare array (X8 device:1time/16byte ,X16 device:1time/8word). The addressing should be done in sequential order in a block. A page program cycle consists of a serial data loading period in which up to 2112bytes (X8 device) or 1056words (X16 device) of data may be loaded into the data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell. The serial data loading period begins by inputting the Serial Data Input command (80h), followed by the five cycle address inputs and then serial data. The words other than those to be programmed do not need to be loaded. The device supports random data input in a page. The column address of next data, which will be entered, may be changed to the address which follows random data input command (85h). Random data input may be operated multiple times regardless of how many times it is done in a page. The Page Program confirm command (10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the programming process. The internal write state controller automatically executes the algorithms and timings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command may be entered to read the status register. The system controller can detect the completion of a program cycle by monitoring the RB# output, or the Status bit (I/ O 6) of the Status Register. Only the Read Status command and Reset command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit (I/O 0) may be checked. The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status command mode until another valid command is written to the command register. Figure 15 details the sequence. Rev 0.7 / Nov. 2005 12 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 3.3 Block Erase. The Erase operation is done on a block basis. Block address loading is accomplished in three cycles initiated by an Erase Setup command (60h). Only address A18 to A29 (X8) or A17 to A28 (X16) is valid while A12 to A17 (X8) or A11 to A16 (X16) is ignored. The Erase Confirm command (D0h) following the block address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that memory contents are not accidentally erased due to external noise conditions. At the rising edge of WE# after the erase confirm command input, the internal write controller handles erase and erase-verify. Once the erase process starts, the Read Status Register command may be entered to read the status register. The system controller can detect the completion of an erase by monitoring the RB# output, or the Status bit (I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while erasing is in progress. When the erase operation is completed, the Write Status Bit (I/O 0) may be checked. Figure 16 details the sequence. 3.4 Copy-Back Program. The copy-back program is configured to quickly and efficiently rewrite data stored in one page without utilizing an external memory. Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned free block. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copying-program with the address of destination page. A read operation with "35h" command and the address of the source page moves the whole 2112byte (X8 device) or 1056word (X16 device) data into the internal data buffer. As soon as the device returns to Ready state, Copy Back command (85h) with the address cycles of destination page may be written. The Program Confirm command (10h) is required to actually begin the programming operation. Data input cycle for modifying a portion or multiple distant portions of the source page is allowed as shown in Figure 12. "When there is a program-failure at Copy-Back operation, error is reported by pass/fail status. But, if Copy-Back operations are accumulated over time, bit error due to charge loss is not checked by external error detection/correction scheme. For this reason, two bit error correction is recommended for the use of Copy-Back operation." Figure 14 shows the command sequence for the copy-back operation. 3.5 Read Status Register. The device contains a Status Register which may be read to find out whether read, program or erase operation is completed, and whether the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs the content of the Status Register to the I/O pins on the falling edge of CE# or RE#, whichever occurs last. This two line control allows the system to poll the progress of each device in multiple memory connections even when RB# pins are common-wired. RE# or CE# does not need to be toggled for updated status. Refer to table 15 for specific Status Register definitions. The command register remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read cycle, the read command (00h) should be given before starting read cycles. See figure 8 for details of the Read Status operation. Rev 0.7 / Nov. 2005 13 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 3.6 Read ID. The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of 00h. Four read cycles sequentially output the manufacturer code (ADh), and the device code and 00h, 4th cycle ID, respectively. The command register remains in Read ID mode until further commands are issued to it. Figure 17 shows the operation sequence, while tables 15, 16, 17 explain the byte meaning. 3.7 Reset. The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and the Status Register is cleared to value E0h when WP# is high. If the device is already in reset state a new reset command will not be accepted by the command register. The RB# pin transitions to low for tRST after the Reset command is written. Refer to figure 23. 3.8 Cache Program. Cache Program is an extension of Page Program, which is executed with 2112byte (X8 device) or 1056word (X16 device) data registers, and is available only within a block. Since the device has 1 page of cache memory, serial data input may be executed while data stored in data register are programmed into memory cell. After writing the first set of data up to 2112byte (X8 device) or 1056word (X16 device) into the selected cache registers, Cache Program command (15h) instead of actual Page Program (10h) is input to make cache registers free and to start internal program operation. To transfer data from cache registers to data registers, the device remains in Busy state for a short period of time (tRBSY) and has its cache registers ready for the next data-input while the internal programming gets started with the data loaded into data registers. Read Status command (70h) may be issued to find out when cache registers become ready by polling the Cache-Busy status bit (I/O 6). Pass/fail status of only the previous page is available upon the return to Ready state. When the next set of data is input with the Cache Program command, tCBSY is affected by the progress of pending internal programming. The programming of the cache registers is initiated only when the pending program cycle is finished and the data registers are available for the transfer of data from cache registers. The status bit (I/O5) for internal Ready/Busy may be polled to identify the completion of internal programming. If the system monitors the progress of programming only with RB#, the last page of the target programming sequence must be programmed with actual Page Program command (10h). If the Cache Program command (15h) is used instead, status bit (I/O5) must be polled to find out when the last programming is actually finished before starting other operations such as read. Pass/fail status is available in two steps. I/O 1 returns with the status of the previous page upon Ready or I/O6 status bit changing to "1", and later I/O 0 with the status of current page upon true Ready (returning from internal programming) or I/O 5 status bit changing to "1". I/O 1 may be read together when I/O 0 is checked. See figure 15 for more details. NOTE : Since programming the last page does not employ caching, the program time has to be that of Page Program. However, if the previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after completion of the previous cycle, which can be expressed as the following formula. tPROG= Program time for the last page+ Program time for the ( last -1 )th page (Program command cycle time + Last page data loading time) Rev 0.7 / Nov. 2005 14 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 3.9 Cache Read Cache read operation allows automatic download of consecutive pages, up to the whole device. Immediately after 1st latency end, while user can start reading out data, device internally starts reading following page. Start address of 1st page is at page start (A<10:0>=00h), after 1st latency time (tr) , automatic data download will be uninterrupted. In fact latency time is 27us, while download of a page require at least 100us for x8 device (50us for x16 device). Cache read operation command is like standard read, except for confirm code (30h for standard read, 31h for cache read) user can check operation status using : - RB# ( `0' means latency ongoing, download not possible, `1' means download of n page possible, even if device internally is active on n+1 page - Status register (SR<6> behave like RB#, SR<5> is `0' when device is internally reading and `1' when device is idle) To exit cache read operation a cache read exit command (34h) must be issued. this command can be given any time (both device idle and reading). If device is active (SR<5>=0) it will go idle within 5us, while if it is not active, device itself will go busy for a time shorter then tCBSY before becoming again idle and ready to accept any further commands. If user arrives reading last byte/word of the memory array, then has to stop by giving a cache read exit command. Random data output is not available in cache read. Cache read operation must be done only block by block if system needs to avoid reading also from invalid blocks. Rev 0.7 / Nov. 2005 15 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 4. OTHER FEATURES 4.1 Data Protection & Power On/Off Sequence The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector disables all functions whenever Vcc is below about 1.1V(1.8V device), 2.0V(3.3V device). WP# pin provides hardware protection and is recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 10us is required before internal circuit gets ready for any command sequences as shown in Figure 24. The two-step command sequence for program/erase provides additional software protection. 4.2 Ready/Busy. The device has a Ready/Busy output that provides method of indicating the completion of a page program, erase, copy-back, cache program and random read completion. The RB# pin is normally high and goes to low when the device is busy (after a reset, read, program, erase operation). It returns to high when the internal controller has finished the operation. The pin is an open-drain driver thereby allowing two or more RB# outputs to be Or-tied. Because pull-up resistor value is related to tr(RB#) and current drain during busy (Ibusy), an appropriate value can be obtained with the following reference chart (Fig 25). Its value can be determined by the following guidance. 4.3 Power-On Auto-Read The device is designed to offer automatic reading of the first page without command and address input sequence during power-on. An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activation of auto- page read function. Auto-page read function is enabled only when PRE pin is logic high state. Serial access may be done after power-on without latency. Power-On Auto Read mode is available only on 3.3V device. Parameter Symbol Min Valid Block Number NVB 4016 Typ Max Unit 4096 Blocks Table 7: Valid Blocks Number Rev 0.7 / Nov. 2005 16 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Symbol Parameter Value Unit 1.8V 3.3V 0 to 70 0 to 70 Ambient Operating Temperature (Extended Temperature Range) -25 to 85 -25 to 85 Ambient Operating Temperature (Industrial Temperature Range) -40 to 85 -40 to 85 TBIAS Temperature Under Bias -50 to 125 -50 to 125 TSTG Storage Temperature -65 to 150 -65 to 150 VIO(2) Input or Output Voltage -0.6 to 2.7 -0.6 to 4.6 V Supply Voltage -0.6 to 2.7 -0.6 to 4.6 V Ambient Operating Temperature (Commercial Temperature Range) TA Vcc Table 8: Absolute maximum ratings NOTE: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. 2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions. Rev 0.7 / Nov. 2005 17 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash $a$ $''5(66 5(*,67(5 &2817(5 352*5$0 (5$6( &21752//(5 +9*(1(5$7,21 35( $/( &/( :( &( :3 5( ; 0ELW0ELW 1$1')ODVK 0(025<$55$< ' ( & 2 ' ( 5 &200$1' ,17(5)$&( /2*,& 3$*(%8))(5 &200$1' 5(*,67(5 <'(&2'(5 '$7$ 5(*,67(5 %8))(56 ,2 Figure 3: Block Diagram Rev 0.7 / Nov. 2005 18 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Parameter Symbol Test Conditions Sequential Read ICC1 Program Erase 1.8Volt 3.3Volt Unit Min Typ Max Min Typ Max tRC(1.8V=60ns, 3.3V=50ns) CE#=VIL, IOUT=0mA - 15 30 - 20 40 mA ICC2 - - 15 30 - 20 40 mA ICC3 - - 15 30 - 20 40 mA Stand-by Current (TTL) ICC4 CE#=VIH, PRE=WP#=Vcc - - 1.5 - 1.5 mA Stand-by Current (CMOS) ICC5 CE#=Vcc-0.2, PRE=WP#=Vcc - 40 200 - 40 200 uA Input Leakage Current ILI VIN=0 to Vcc (max) - - 40 - - 40 uA Output Leakage Current ILO VOUT =0 to Vcc (max) - - 40 - - 40 uA Input High Voltage VIH - Vcc-0.4 - Vcc+0. 3 2 - Vcc+0 .3 V Input Low Voltage VIL - -0.3 - 0.4 -0.3 - 0.8 V Output High Voltage Level VOH IOH=-100uA Vcc-0.1 - - - - - V IOH=-400uA - - - 2.4 - - V Output Low Voltage Level VOL IOL=100uA - - 0.1 - - - V IOL=2.1mA - - - - - 0.4 V VOL=0.1V 3 4 - - - - mA VOL=0.4V - - - 8 10 - mA Operating Current Output Low Current (RB#) IOL (RB#) Table 9: DC and Operating Characteristics Value Parameter Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels Output Load (1.7V - 1.95Volt & 2.7V - 3.3V) 1.8Volt 3.3Volt 0V to Vcc 0.4V to 2.4V 5ns 5ns Vcc / 2 1.5V 1 TTL GATE and CL=30pF 1 TTL GATE and CL=50pF Output Load (3.0V - 3.6V) 1 TTL GATE and CL=100pF Table 10: AC Conditions NOTE: 1. These parameters are applied to the errata. Rev 0.7 / Nov. 2005 19 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Item Symbol Test Condition Min Max Unit Input / Output Capacitance CI/O VIL=0V - 40 pF Input Capacitance CIN VIN=0V - 40 pF Table 11: Pin Capacitance (TA=25C, F=1.0MHz) Parameter Symbol Min Typ Max Unit Program Time tPROG - 300 700 us Dummy Busy Time for Cache Program tCBSY - 3 700 us Dummy Busy Time for Cache Read tRBSY - 5 - us Dummy Busy Time for the Lock or Lock-tight Block tLBSY - 5 10 us Main Array NOP - - 4 Cycles Spare Array NOP - - 4 Cycles tBERS - 2 3 ms Number of partial Program Cycles in the same page Block Erase Time Table 12: Program / Erase Characteristics Rev 0.7 / Nov. 2005 20 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Parameter Symbol 1.8Volt Min Max 3.3Volt Min Max Unit CLE Setup time tCLS 5 5 ns CLE Hold time tCLH 15 15 ns CE# setup time tCS 0 0 ns CE# hold time tCH 10 10 ns WE# pulse width tWP 40 40 ns ALE setup time tALS 5 5 ns ALE hold time tALH 15 15 ns Data setup time tDS 25 25 ns Data hold time tDH 15 15 ns Write Cycle time tWC 60 60 ns WE# High hold time tWH 20 20 ns ADL(3) 100 100 ns ALE to Data Loading time t Data Transfer from Cell to register tR ALE to RE# Delay tAR 10 10 ns CLE to RE# Delay tCLR 10 10 ns Ready to RE# Low tRR 20 20 ns RE# Pulse Width (ID Read) tRP 25 25 ns RE# Pulse Width (Data Read) tRP 25 25 ns WE# High to Busy tWB Read Cycle Time (ID Read) tRC 60 50 27 27 100 100 us ns ns 60 50 ns Read Cycle Time (Data Read) tRC RE# Access Time tREA 30 30 ns RE# High to Output High Z tRHZ 30 30 ns CE# High to Output High Z tCHZ 20 20 ns RE or CE High to Output hold tOH 15 15 ns RE# High Hold Time (ID Read) tREH 30 30 ns RE# High Hold Time (Data Read) tREH 20 20 ns Output High Z to RE# low tIR 0 CE# Access Time tCEA WE# High to RE# low tWHR Device Resetting Time (Read / Program / Erase) tRST Write Protection time tWW(3) 0 45 60 ns 45 60 5/10/500(1) 100 ns 5/10/500(1) 100 ns us ns Table 13: AC Timing Characteristics NOTE: 1. If Reset Command (FFh) is written at Ready state, the device goes into Busy for maximum 5us 2. tADL is the time from the WE# rising edge of final address cycle to the WE# rising edge of first data cycle. 3. Program / Erase Enable Operation : tWP# high to tWE# High. Program / Erase Disable Operation : tWP# Low to tWE# High. Rev 0.7 / Nov. 2005 21 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash IO Pagae Program Block Erase Cache Program Read Cache Read 0 Pass / Fail Pass / Fail Pass / Fail (N) NA Pass: `0' Fail: `1' 1 NA NA Pass / Fail (N-1) NA Pass: `0' Fail: `1' (Only for Cache Program, else Don't care) 2 NA NA NA NA - 3 NA NA NA NA - 4 NA NA NA NA - 5 Ready/Busy Ready/Busy P/E/R Controller Bit Ready/Busy P/E/R Controller Bit Active: `0' Idle: `1' 6 Ready/Busy Ready/Busy Cache Register Free Ready/Busy Ready/Busy Busy: `0' Ready': `1' 7 Write Protect Write Protect Write Protect Write Protect CODING Protected: `0' Not Protected: `1' Table 14: Status Register Coding DEVICE IDENTIFIER BYTE DESCRIPTION 1st Manufacturer Code 2nd Device Identifier 3rd Don't care 4th Page Size, Block Size, Spare Size, Organization Table 15: Device Identifier Coding Part Number Voltage Bus Width Manufacture Code Device Code 3rd Code 4th Code HY27UH084G2M 3.3V x8 ADh DCh don't care 15h HY27SH084G2M 1.8V x8 ADh ACh don't care 15h HY27UH164G2M 3.3V x16 00ADh CCh don't care 0055h HY27SH164G2M 1.8V x16 00ADh BCh don't care 0055h Table 16: Read ID Data Table Rev 0.7 / Nov. 2005 22 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Description Page Size (Without Spare Area) Spare Area Size (Byte / 512Byte) Serial Access Time Block Size (Without Spare Area) Organization Not Used IO7 IO6 IO5-4 IO3 IO2 1K 2K Reserved Reserved IO1-0 0 0 1 1 8 16 0 1 0 1 0 1 Standard (50ns) Fast (30ns) 0 1 64K 128K 256K Reserved 0 0 1 1 X8 X16 0 1 0 1 0 1 Reserved Table 17: 4th Byte of Device Identifier Description Rev 0.7 / Nov. 2005 23 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash &/( W&/6 W&/+ W&6 W&+ &( W:3 :( W$/6 W$/+ $/( W'6 ,2[ W'+ &RPPDQG Figure 4: Command Latch Cycle W&/6 &/( &( W:& W&6 W:& W:3 :( W:3 W$/+ W$/6 W:& W:3 W:+ W$/6 W:& W:+ W$/+ W:3 W:+ W$/6 W$/+ W:+ W$/6 W$/+ W$/6 W$/+ $/( ,2[ W'+ W'+ W'+ W'6 W'6 &RO$GG &RO$GG W'6 5RZ$GG W'+ W'+ W'6 5RZ$GG W'6 5RZ$GG Figure 5: Address Latch Cycle Rev 0.7 / Nov. 2005 24 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash W&/+ &/( W&+ &( W$/6 W:& $/( W:3 W:3 :( W:3 W:+ W:+ W'6 ,2[ W'+ W'6 ',1 W'+ ',1 W'6 W'+ ',1ILQDO Figure 6. Input Data Latch Cycle W&($ &( W5($ W5(+ W53 W&+= W5($ W5($ W2+ 5( W5+= W5+= W2+ ,2[ 'RXW W55 'RXW 'RXW W5& 5% 127(67UDQVLWLRQLVPHDVXUHGP9IURPVWHDG\VWDWHYROWDJHZLWKORDG 7KLVSDUDPHWHULVVDPSOHGDQGQRWWHVWHG Figure 7: Sequential Out Cycle after Read (CLE=L, WE#=H, ALE=L) Rev 0.7 / Nov. 2005 25 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash W&/5 &/( W&/6 W&/+ W&6 &( W&+ W:3 :( W&($ W&+= W:+5 5( W'6 ,2[ W'+ W,5 W5($ W5+= 6WDWXV2XWSXW K Figure 8: Status Read Cycle W&/5 &/( &( W:& :( W:% W$5 $/( W5 W5& W5+= 5( W55 ,2[ K &RO$GG &RO$GG &ROXPQ$GGUHVV 5% 5RZ$GG 5RZ$GG 5RZ$GG 'RXW1 K 'RXW1 'RXW0 5RZ$GGUHVV %XV\ Figure 9: Read1 Operation (Read One Page) Rev 0.7 / Nov. 2005 26 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash &( :( W:% W&+= W$5 W2+ $/( W5 W5& 5( W55 ,2[ K 5% &RO &RO $GG $GG &ROXPQ$GGUHVV 5RZ $GG 5RZ 5RZ $GG $GG 5RZ$GGUHVV 'RXW 1 K 'RXW 1 'RXW 1 %XV\ Figure 10: Read1 Operation intercepted by CE# Rev 0.7 / Nov. 2005 27 Rev 0.7 / Nov. 2005 5% ,2[ 5( $/( :( &( &/( &ROXPQ$GGUHVV 5RZ$GGUHVV K &RO$GG &RO$GG 5RZ$GG 5RZ$GG 5RZ$GG K W55 W$5 %XV\ W5 W:% 'RXW1 W5& 'RXW1 K &RO$GG &ROXPQ$GGUHVV &RO$GG (K W:+5 W&/5 'RXW0 W5($ 'RXW0 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Figure 11 : Random Data output 28 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash &/( &( W:& W:& W:& :( W$'/ W:% W352* $/( 5( ,2[ K &RO $GG &RO $GG 6HULDO'DWD ,QSXW&RPPDQG &ROXPQ$GGUHVV 5RZ $GG 5RZ $GG 5RZ $GG 5RZ$GGUHVV 'LQ 1 XSWRP%\WH 6HULDO,QSXW 'LQ 0 K 3URJUDP &RPPDQG K ,2R 5HDG6WDWXV &RPPDQG 5% ;GHYLFHP E\WH ;GHYLFHP ZRUG ,2R 6XFFHVVIXO3URJUDP ,2R (UURULQ3URJUDP Figure 12: Page Program Operation Rev 0.7 / Nov. 2005 29 Rev 0.7 / Nov. 2005 5% ,2[ 5( $/( :( &( &/( W:& W$'/ 5RZ$GGUHVV &RO$GG &RO$GG 5ZR$GG 5ZR$GG 5ZR$GG 6HULDO'DWD ,QSXW&RPPDQG &ROXPQ$GGUHVV K W:& 'LQ 0 K 5DQGRP'DWD 6HULDO,QSXW ,QSXW&RPPDQG 'LQ 1 W:& &RO$GG &ROXPQ$GGUHVV &RO$GG W$'/ 6HULDO,QSXW 'LQ - 'LQ . 3URJUDP &RPPDQG K W:% W352* K 5HDG6WDWXV &RPPDQG ,2 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Figure 13 : Random Data In 30 Rev 0.7 / Nov. 2005 5% ,2[ 5( $/( :( &( &/( &RO $GG 5RZ $GG 5RZ $GG 5RZ $GG &ROXPQ$GGUHVV 5RZ$GGUHVV &RO $GG K W:% K &RO $GG 5RZ $GG 5RZ $GG 5RZ $GG 'DWD &ROXPQ$GGUHVV 5RZ$GGUHVV &RO $GG %XV\ &RS\%DFN'DWD ,QSXW&RPPDQG W5 W$'/ W:% 'DWD1 K 1RWHVW$'/LVWKHWLPHIURPWKH:(ULVLQJHGJHRIILQDODGGUHVVF\FOHWRWKH:(ULVLQJHGJHRIILUVWGDWDF\FOH K W:& K ,2 ,2 6XFFHVVIXO3URJUDP ,2 (UURULQ3URJUDP %XV\ 5HDG6WDWXV &RPPDQG W352* HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Figure 14 : Copy Back Program 31 Rev 0.7 / Nov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eries HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Figure 15 : Cache Program 32 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash &/( &( W:& :( W:% W%(56 $/( 5( ,2[ K 5RZ 5RZ 5RZ $GG $GG $GG 5RZ$GGUHVV 'K K 5% ,2 %86< (UDVH&RPPDQG $XWR%ORFN(UDVH 6HWXS&RPPDQG 5HDG6WDWXV &RPPDQG ,2 6XFFHVVIXO(UDVH ,2 (UURULQ(UDVH Figure 16: Block Erase Operation (Erase One Block) &/( &( :( W$5 $/( 5( W5($ K K 5HDG,'&RPPDQG $GGUHVVF\FOH ,2[ $'K '&K 0DNHU&RGH 'HYLFH&RGH K 'RQWFDUH [[K WKF\FOH Figure 17: Read ID Operation Rev 0.7 / Nov. 2005 33 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash &/( $/( :( ' 'K $GG $GG $GG $GG K ' ' ' ' ' ' ' ' ' ' ' ' V 5( ,QWHUQDORSHUDWLRQ 5HDGUGSDJH ,GOH 5HDGVWSDJH 5HDGQGSDJH V 5HDGWKSDJH V V V 6WDWXV5HJLVWHU 65! ,GOH V V Figure 18: start address at page start :after 1st latency uninterrupted data flow &/( 8VHUFDQ KHUHILQLVK UHDGLQJ1 SDJH $/( :( ' ' ' ' ' ' ' K QSDJH QSDJH 5( 1SDJH FDQQRWEH UHDG V W5%6< 5% ,QWHUQDO RSHUDWLRQ 5HDGQSDJH ,GOH ,QWHUUXSWHG 5HDG QSDJH ,GOH V V 6WDWXV5HJLVWHU 65! Figure 19: exit from cache read in 5us when device internally is reading Rev 0.7 / Nov. 2005 34 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash System Interface Using CE don't care To simplify system interface, CE may be deasserted during data loading or sequential data-reading as shown below. So, it is possible to connect NAND Flash to a microporcessor. The only function that was removed from standard NAND Flash to make CE don't care read operation was disabling of the automatic sequential read function. &/( &(GRQWFDUH &( :( $/( ,2[ K 6WDUW$GG &\FOH 'DWD,QSXW 'DWD,QSXW K Figure 20: Program Operation with CE don't-care. &/( ,IVHTXHQWLDOURZUHDGHQDEOHG &(PXVWEHKHOGORZGXULQJW5 &(GRQWFDUH &( 5( $/( 5% W5 :( ,2[ K 6WDUW$GG &\FOH K 'DWD2XWSXW VHTXHQWLDO Figure 21: Read Operation with CE don't-care. Rev 0.7 / Nov. 2005 35 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 9 9FF :( &( $/( &/( W5 5% 35( 5( ,2[ 'DWD 'DWD 'DWD /DVW 'DWD 'DWD2XWSXW Figure 22: Automatic Read at Power On :( $/( &/( 5( ,2 ))K W567 5% Figure 23: Reset Operation Rev 0.7 / Nov. 2005 36 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 9FF 97+ W :3 :( 7 Figure 24: Power On/Off Timing Rev 0.7 / Nov. 2005 37 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 5S LEXV\ 9FF 5HDG\ 9FF 5% RSHQGUDLQRXWSXW 9 9 %XV\ WI WU *1' 'HYLFH )LJ5SYVWUWI 5SYVLEXV\ #9FF 97D &&/ S) LEXV\ Q Q Q P P WI N N N N LEXV\>$@ WUWI>V@ P 5S RKP 5SYDOXHJXLGHQFH 5S PLQ 9FF 0D[ 92/ 0D[ 9 ,2/,/ P$,/ ZKHUH,/LVWKHVXPRIWKHLQSXWFXUUQWVRIDOOGHYLFHVWLHGWRWKH5%SLQ 5S PD[ LVGHWHUPLQHGE\PD[LPXPSHUPLVVLEOHOLPLWRIWU Figure 25: Ready/Busy Pin electrical specifications Rev 0.7 / Nov. 2005 38 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash wG]Z wG]Z O][P O][P a wGZX a wGZX OZYP OXP a wGY wGX wGW a wGY wGX wGW OZP OYP OXP kG kG mGGsziGGGtziG kh{hGpuGaGkGOXP OZP OZYP OXP kGO][P lUPGyGGGOwP kh{hGpuGaGkGOXP kGO][P Figure 26: page programming within a block Rev 0.7 / Nov. 2005 39 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Bad Block Management Devices with Bad Blocks have the same quality level and the same AC and DC characteristics as devices where all the blocks are valid. A Bad Block does not affect the performance of valid blocks because it is isolated from the bit line and common source line by a select transistor. The devices are supplied with all the locations inside valid blocks erased(FFh). The Bad Block Information is written prior to shipping. Any block where the 1st Byte in the spare area of the 1st or 2nd page(if the 1st page is Bad) does not contain FFh is a Bad Block. The Bad Block Information must be read before any erase is attempted as the Bad Block Information may be erased. For the system to be able to recognize the Bad Blocks based on the original information it is recommended to create a Bad Block table following the flowchart shown in Figure 26. The 1st block, which is placed on 00h block address is guaranteed to be a valid block. Bad Replacement Over the lifetime of the device additional Bad Blocks may develop. In this case the block has to be replaced by copying the data to a valid block. These additional Bad Blocks can be identified as attempts to program or erase them will give errors in the Status Register. As the failure of a page program operation does not affect the data in other pages in the same block, the block can be replaced by re-programming the current data and copying the rest of the replaced block to an available valid block. The Copy Back Program command can be used to copy the data to a valid block. See the "Copy Back Program" section for more details. Refer to Table 17 for the recommended procedure to follow if an error occurs during an operation. Operation Recommended Procedure Erase Block Replacement Program Block Replacement or ECC Read ECC Table 18: Block Failure 67$57 %ORFN$GGUHVV %ORFN ,QFUHPHQW %ORFN$GGUHVV 'DWD ))K" 1R 8SGDWH %DG%ORFNWDEOH <HV /DVW EORFN" 1R <HV (1' Figure 27: Bad Block Management Flowchart Rev 0.7 / Nov. 2005 40 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Write Protect Operation The Erase and Program Operations are automatically reset when WP goes Low (tWW = 100ns, min). The operations are enabled and disabled as follows (Figure 28~31) :( W :: ,2[ K K :3 5% Figure 28: Enable Programming :( W :: ,2[ K K :3 5% Figure 29: Disable Programming Rev 0.7 / Nov. 2005 41 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash :( W :: K ,2[ 'K :3 5% Figure 30: Enable Erasing :( W :: ,2[ K 'K :3 5% Figure 31: Disable Erasing Rev 0.7 / Nov. 2005 42 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 5. APPENDIX : Extra Features 5.1 Automatic Page0 Read after Power Up The timing diagram related to this operation is shown in Fig. 22 Due to this functionality the CPU can directly download the boot loader from the first page of the NAND flash, storing it inside the internal cache and starting the execution after the download completed. 5.2 Stacked Devices Access A small logic inside the devices allows the possibility to stack up to 4 devices in a single package without changing the pinout of the memory. To do this the internal address register can store up to 29 addresses (512 Mbyte addressing field) and basing on the 2 MSB pattern each device inside the package can decide if remain active (1 over 4) or "hangup" the connection entering the Stand-By. 5.3 Addressing for program operation Within a block, the pages must be programmed consecutively from LSB (least significant bit) page of the block to MSB (most significant bit) page of the block. Random address programming is prohibited. See Fig. 26. 5.4 Multiple Die Concurrent Operations and Extended Read Status When the 1Gbit is stacked to form a 4Gbit QDP some concurrent operations (like Erase while Read, Read while write, etc.) are available. Moreover an extended Read Status Register Feature is included to check the status of each stacked device. In more details it is possible to run a first operation selecting the first 1Gbit, then activate a concurrent operation on the second (or third or fourth) device, checking the progression of these operations by the use of the extended Read Status Register feature. The command sequence to be used is shown in Table 18. The result is the typical Read Status Pattern. FUNCTION Read Status 1st device COMMAND (AX<= 0x07FFFFFF) 72h Read Status 2nd device (0x07FFFFFF <AX<= 0x0FFFFFFF) 73h Read Status 3rd device (0x0FFFFFFF <AX<= 0x17FFFFFF) 74h Read Status 4th device (0x17FFFFFF <AX<= 0x1FFFFFFF) 75h Table 19: Extended Read Status Register Commands Rev 0.7 / Nov. 2005 43 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash / H ' $ $ % $ / ',( ( ( & &3 Figure 32. 48-pin TSOP1, 12 x 20mm, Package Outline millimeters Symbol Min Typ A Max 1.200 A1 0.050 0.150 A2 0.980 1.030 B 0.170 0.250 C 0.100 0.200 CP 0.100 D 11.910 12.000 12.120 E 19.900 20.000 20.100 E1 18.300 18.400 18.500 e 0.500 L 0.500 0.680 alpha 0 5 Table 20: 48-pin TSOP1, 12 x 20mm, Package Mechanical Data Rev 0.7 / Nov. 2005 44 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash MARKING INFORMATION - TSOP1 P ackag TSOP1 M a rk in g E x a m p le H Y 2 7 x x x x x H - h y n ix : H y n ix S y m b o l - KOR : O rig in C o u n try - HY27xHxx4G2M xxxx : P a rt N u m b e r x K O R x 4 G 2 M Y W W x x H Y : H Y N IX 2 7 : N A N D F la sh x : P o w e r S u p p ly : U (2 .7 V ~ 3 .6 V ), L (2 .7 V ), S (1 .8 V ) H : C la ssifica tio n : S in g le L e v e l C e ll+ Q u a d ru p le D ie + L a rg e B lo c k x x : B it O rg a n iza tio n : 0 8 (x 8 ), 1 6 (x 1 6 ) 4 G : D e n sity : 4 G b it 2: M ode : 1 n C E & 1 R /n B ; S e q u e n tia l R o w R e a d D isa b le M : V e rsio n : 1 st G e n e ra tio n x: Package T ype : T (4 8 -T S O P 1 ) x : P a c k a g e M a te ria l : B la n k (N o rm a l), P (L e a d F re e ) x : O p e ra tin g T e m p e ra tu re : C (0 ~ 7 0 ), E (-2 5 ~ 8 5 ) M (-3 0 ~ 8 5 ), I(-4 0 ~ 8 5 ) x : B a d B lo c k : B (In c lu d e d B a d B lo c k ), S (1 ~ 5 B a d B lo c k ), P (A ll G o o d B lo c k ) - Y : Y e a r (e x : 5 = y e a r 2 0 0 5 , 0 6 = y e a r 2 0 0 6 ) - w w : W o rk W e e k (e x : 1 2 = w o rk w e e k 1 2 ) - x x : P ro c e ss C o d e N o te - C a p ita l L e tte r : F ix e d Ite m - S m a ll L e tte r : N o n -fix e d Ite m Rev 0.7 / Nov. 2005 45 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Application Note 1. Power-on/off Sequence After power is on, the device starts an internal circuit initialization when the power supply voltage reaches a specific level. The device shows its internal initialization status with the Ready/Busy signal if initialization is on progress. While the device is initializing, the device sets internal registeries to default value and generates internal biases to operate circuits. Typically the initializing time of 20us is required. Power-off or power failure before write/erase operation is complete will cause a loss of data. The WP# signal helps user to protect not only the data integrity but also device circuitry from being damaged at power-on/off by keeping WP# at VIL during power-on/off. For the device to operate stably, it is highly recommended to operate the device as shown Fig.33. 9'HYLFH9 9'HYLFH9 9&& 9 2WKHUV 3LQV ,QLWLDOL]HDWSRZHURQ 5HDG\ %XV\ :( :3 9,/ 9,/ XV 9,+ Figure 33: Power-on/off sequence Rev 0.7 / Nov. 2005 46 HY27UH(08/16)4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash 2. Automatic sleep mode for low power consumption The device provides the automatic sleep function for low power consumption. The device enters the automatic sleep mode by keeping CE# at VIH level for 10us without any additional command input, and exits simply by lowering CE# to VIL level. Typically, consecutive operation is executable right after deactivating the automatic sleep mode, while tCS of 100ns is required prior to following operation as shown in Fig.34. 5HDG2SHUDWLRQ ,2[ $GGUHVVLQSXW K 'DWDRXWSXW FROXPQ0a1 'DWDRXWSXW FROXPQ/a0 K QV 0LQ 5( $XWR6OHHS &( XV 0LQ&( 9,+ 3URJUDP2SHUDWLRQ ,2[ $GGUHVVLQSXW K 'DWDLQSXW FROXPQ0a1 'DWDLQSXW FROXPQ/a0 K QV 0LQ :( $XWR6OHHS &( XV 0LQ&( 9,+ Figure 34: tCS setting when deactivating the auto sleep mode Rev 0.7 / Nov. 2005 47