2N6388 - ON Semiconductor - Datasheet.Live

November, 2014 − Rev. 15 1Publication Order Number:

2N6387/D

2N6387, 2N6388

Plastic Medium-Power

Silicon Transistors

These devices are designed for general−purpose amplifier and

low−speed switching applications.

Features

•High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

•Collector−Emitter Sustaining Voltage − @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) − 2N6387

= 80 Vdc (Min) − 2N6388

•Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC

= 5.0 Adc − 2N6387, 2N6388

•Monolithic Construction with Built−In Base−Emitter Shunt Resistors

•TO−220AB Compact Package

•These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector−Emitter Voltage 2N6387

2N6388 VCEO 60

80 Vdc

Collector−Base Voltage 2N6387

2N6388 VCB 60

80 Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current − Continuous

− Peak IC10

15 Adc

Base Current IB250 mAdc

Total Power Dissipation @ TC = 25_C

Derate above 25_CPD65

0.52 W

W/°C

Total Power Dissipation @ TA = 25_C

Derate above 25_CPD2.0

0.016 W

W/°C

Operating and Storage Junction,

Temperature Range TJ, Tstg −65 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. Indicates JEDEC Registered Data.

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 1.92 _C/W

Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

DARLINGTON NPN SILICON

POWER TRANSISTORS

8 AND 10 AMPERES

65 WATTS, 60 − 80 VOLTS

TO−220

CASE 221A

STYLE 1

123

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2N638x = Device Code

x = 7 or 8

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MARKING DIAGRAM

2N638xG

AYWW

2N6388G TO−220

(Pb−Free) 50 Units / Rail

Device Package Shipping

2N6387G TO−220

(Pb−Free) 50 Units / Rail

ORDERING INFORMATION

2N6387, 2N6388

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020 40 80 100 120 160

Figure 1. Power Derating

T, TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

TATC

4.0

2.0

1.0

3.0

0 60 140

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 200 mAdc, IB = 0) 2N6387

2N6388

VCEO(sus) 60

80 −

−

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0) 2N6387

(VCE = 80 Vdc, IB = 0) 2N6388

ICEO −

−1.0

1.0

mAdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N6387

(VCE − 80 Vdc, VEB(off) = 1.5 Vdc) 2N6388

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N6387

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N6388

ICEX −

−

300

3.0

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 5.0 mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 5.0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388

(IC = 1 0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388

hFE 1000

100 20,000

−

Collector−Emitter Saturation Voltage

(IC = 5.0 Adc, IB = 0.01 Adc) 2N6387, 2N6388

(IC = 10 Adc, IB = 0.1 Adc) 2N6387, 2N6388

VCE(sat) −

−2.0

3.0

Vdc

Base−Emitter On Voltage

(IC = 5.0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388

(IC = 10 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388

VBE(on) −

−2.8

4.5

Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) |hfe| 20 − −

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 200 pF

Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 1000 − −

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Indicates JEDEC Registered Data.

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2N6387, 2N6388

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Figure 2. Switching Times Test Circuit

7.0

0.1

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMPS)

t, TIME (s)μ

5.0

0.7

0.3

0.2

0.2 10

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

0.07 1.0 5.0

0.1

1.0

3.0

0.5 2.0

VCC

+ 30 V

SCOPE

TUT

- 4.0 V

tr, tf v 10 ns

DUTY CYCLE = 1.0%

D1 MUST BE FAST RECOVERY TYPES, e.g.,

1N5825 USED ABOVE IB [ 100 mA

MSD6100 USED BELOW IB [ 100 mA

25 ms

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

APPROX

+ 12 V

APPROX

- 8 V

[ 8.0 k [ 120

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

ZqJC (t) = r(t) RqJC

RqJC = 1.92°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

2N6387, 2N6388

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BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 100°C

SECOND BREAKDOWN LIMITED

1.0

Figure 5. Active-Region Safe Operating Area

2.0

0.03 10 20 80

TJ = 150°C

0.2

5.0

0.5

IC, COLLECTOR CURRENT (AMPS)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0

0.1

2.0 604.0 6.0

50 ms

10 ms

CURVES APPLY BELOW RATED VCEO

5 ms

1 ms

50 ms

2N6387

2N6388

There are two limitations on the power handling ability o f

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 150_C. T J(pk) may be calculated from the data in Figure

4. At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown

10,000

1.0

Figure 6. Small−Signal Current Gain

f, FREQUENCY (kHz)

10 2.0 5.0 10 20 50 100 200 1000

500

300

100

5000

hFE, SMALL-SIGNAL CURRENT GAIN

3000

200

500

2000

1000

TC = 25°C

VCE = 4.0 Vdc

IC = 3.0 Adc

300

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

30 1.0 2.0 5.0 20 10010

C, CAPACITANCE (pF)

200

100

Cib

Cob

500.2 0.5

TJ = 25°C

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 2.0 10

500

300

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

VCE = 4.0 V

200 7.0

20,000

5000

10,000

3000

2000

1000

3.0 5.0

Figure 9. Collector Saturation Region

3.0

IB, BASE CURRENT (mA)

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25°C

4.0 A 6.0 A

1.0 0.7 2010

2N6387, 2N6388

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0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0

- 1.0

IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VCE(sat) @ IC/IB = 250

TJ = 25°C

VBE @ VCE = 4.0 V

0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0

3.0

2.5

2.0

1.5

1.0

0.5

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

*qVC for VCE(sat) -55°C to 25°C

25°C to 150°C

*IC/IB ≤

hFE@VCE +4.0V

-55°C to 25°C

25°C to 150°C

qVB for VBE

- 2.0

- 3.0

- 4.0

- 5.0

+ 1.0

+ 2.0

+ 3.0

+ 4.0

+ 5.0

105

Figure 12. Collector Cut−Off Region

VBE, BASE-EMITTER VOLTAGE (VOLTS)

102

101

100

, COLLECTOR CURRENT (A)

10-1

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

103

104

+0.2 +0.40-0.2-0.4-0.6 +0.6 +0.8 +1.0 +1.2 + 1.4

Figure 13. Darlington Schematic

BASE

COLLECTOR

EMITTER

[ 8.0 k [ 120

2N6387, 2N6388

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PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AH

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.415 9.66 10.53

C0.160 0.190 4.07 4.83

D0.025 0.038 0.64 0.96

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.024 0.36 0.61

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

UBLICATION ORDERING INFORMATION

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

2N6387/D

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