VSMY1850ITX01 - VISHAY - Datasheet.Live

VSMY1850ITX01

www.vishay.com Vishay Semiconductors

Rev. 1.2, 30-Jun-16 1Document Number: 84272

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Speed Infrared Emitting Diodes, 850 nm,

Surface Emitter Technology

DESCRIPTION

As part of the SurfLightTM portfolio, the VSMY1850ITX01 is

an infrared, 850 nm emitting diode based on GaAlAs surface

emitter chip technology with high radiant intensity, high

optical power and high speed, molded in clear, untinted

0805 plastic package for surface mounting (SMD).

FEATURES

• Package type: surface mount

• Package form: 0805

• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85

• AEC-Q101 qualified

• Enhanced operating temperature range:

-40 °C to +105 °C

• Peak wavelength: λp = 850 nm

• High reliability

• High radiant power

• High radiant intensity

• High speed

• Angle of half intensity: ϕ = ± 60°

• Suitable for high pulse current operation

• 0805 standard surface-mountable package

• Floor life: 72 h, MSL 4, according to J-STD-020

• Lead (Pb)-free reflow soldering

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Miniature light barrier

• Photointerrupters

• Optical switch

• Emitter source for proximity sensors

• IR touch panels

•IR flash

• IR illumination

• Emitter for automotive applications (e.g. rain sensor)

Note

• Test conditions see table “Basic Characteristics“

Note

• MOQ: minimum order quantity

21531

PRODUCT SUMMARY

COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)

VSMY1850ITX01 10 ± 60 850 10

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

VSMY1850ITX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805

VSMY1850ITX01

www.vishay.com Vishay Semiconductors

Rev. 1.2, 30-Jun-16 2Document Number: 84272

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage VR5V

Forward current IF100 mA

Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA

Surge forward current tp = 100 μs IFSM 1A

Power dissipation PV190 mW

Junction temperature Tj100 °C

Operating temperature range Tamb -40 to +105 °C

Storage temperature range Tstg -40 to +110 °C

Soldering temperature According to Fig. 7, J-STD-020 Tsd 260 °C

Thermal resistance junction / ambient JESD 51 RthJA 270 K/W

100

120

140

160

180

200

0 153045607590105120

PV- Power Dissipation (mW)

Tamb - Ambient Temperature (°C)

RthJA = 270 K/W

100

120

0 153045607590105120

- Forward Current (mA)

amb

- Ambient Temperature (°C)

RthJA = 270 K/W

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Forward voltage IF = 100 mA, tp = 20 ms VF- 1.65 1.9 V

IF = 1 A, tp = 100 μs VF-2.9- V

Temperature coefficient of VF

IF = 1 mA TKVF --1.4-mV/K

IF = 10 mA TKVF --1.18-mV/K

Reverse current IRNot designed for reverse operation μA

Junction capacitance VR = 0 V, f = 1 MHz,

E = 0 mW/cm2CJ- 125 v pF

Radiant intensity IF = 100 mA, tp = 20 ms Ie51015mW/sr

IF = 1 A, tp = 100 μs Ie-85-mW/sr

Radiant power IF = 100 mA, tp = 20 ms φe-50-mW

Temperature coefficient of

radiant power IF = 100 mA TKφe--0.35- %/K

Angle of half intensity ϕ-± 60- deg

Peak wavelength IF = 100 mA λp840 850 870 nm

Spectral bandwidth IF = 30 mA Δλ -30-nm

Temperature coefficient of λpIF = 30 mA TKλp-0.25-nm/K

Rise time IF = 100 mA, 20 % to 80 % tr-10-ns

Fall time IF = 100 mA, 20 % to 80 % tf-10-ns

Virtual source diameter d - 0.5 - mm

VSMY1850ITX01

www.vishay.com Vishay Semiconductors

Rev. 1.2, 30-Jun-16 3Document Number: 84272

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 3 - Forward Current vs. Forward Voltage

Fig. 4 - Radiant Intensity vs. Forward Current

Fig. 5 - Relative Radiant Power vs. Wavelength

Fig. 6 - Relative Radiant Intensity vs. Angular Displacement

REFLOW SOLDER PROFILE

Fig. 7 - Lead (Pb)-free Reflow Solder Profile

According to J-STD-020

DRYPACK

Devices are packed in moisture barrier bags (MBB) to

prevent the products from moisture absorption during

transportation and storage. Each bag contains a desiccant.

FLOOR LIFE

Time between soldering and removing from MBB must not

exceed the time indicated in J-STD-020:

Moisture sensitivity: level 4

Floor life: 72 h

Conditions: Tamb < 30 °C, RH < 60 %

DRYING

In case of moisture absorption devices should be baked

before soldering. Conditions see J-STD-020 or label.

Devices taped on reel dry using recommended conditions

192 h at 40 °C (+ 5 °C), RH < 5 %.

- Forward Voltage (V)

22097

- Forward Current (A)

0.001

0.01

0.1

0 0.5 1 1.5 2 2.5 3 3.5

tp = 100 µs

22110 IF - Forward Current (A)

Ie - Radiant Intensity (mW/sr)

0.1

100

1000

0.001 0.01 0.1 1

tp = 100 µs

λ - Wavelength (nm)

21776-1

Φe, rel - Relative Radiant Power

0.25

0.5

0.75

650 750 850 950

= 30 mA

0.4 0.2 0

e, rel

- Relative Radiant Intensity

0.6

0.9

0.8

0°

30°

10° 20°

40°

50°

60°

70°

80°

0.7

1.0

ϕ - Angular Displacement

948013-1

100

150

200

250

300

0 50 100 150 200 250 300

Time (s)

Temperature (°C)

240 °C 245 °C

max. 260 °C

max. 120 s max. 100 s

217 °C

max. 30 s

max. ramp up 3 °C/s

max. ramp down 6 °C/s

19841

255 °C

VSMY1850ITX01

www.vishay.com Vishay Semiconductors

Rev. 1.2, 30-Jun-16 4Document Number: 84272

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters

Drawing-No.: 6.541-5083.01-4

specications

according to DIN

technical drawings

1.25

0.35

0.85

Not indicated tolerances ± 0.1

1 1

1.2

0.6

Recommended solder pad

Footprint

0.6 0.6

0.82

0.625

Issue: 1; 29.03.10

Cathode Anode

Top View

Side View

Bottom View

22111

VSMY1850ITX01

www.vishay.com Vishay Semiconductors

Rev. 1.2, 30-Jun-16 5Document Number: 84272

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BLISTER TAPE DIMENSIONS in millimeters

REEL DIMENSIONS in millimeters

Drawing-No.: 9.700-5352.01-4

specications

according to DIN

technical drawings

Reel off direction

2 ± 0.05

Ø 1.55 ± 0.05

0.2 ± 0.05

0.94 4

1.75

3.5 ± 0.05

2.24

Not indicated tolerances ±0.1

1.45

Ø 1.1 + 0.1

Anode

Cathode

Issue: 1; 13.04.10

22112

of the wheel is supplier specic.

Form of the leave open

Issue: 2; 26.04.10

Drawing-No.: 9.800-5096.01-4

specications

according to DIN

technical drawings

Ø 177.8 max.

Ø 55 min.

8.4 +2.5

8.4 +0.15

14.4 max.

Ø 13 + 0.5

- 0.2

1.5 min.

Ø 20.2 min.

Z 2:1

20875

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Revision: 01-Jan-2021 1Document Number: 91000

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