fiAMOSPEC HIGH-POWER PNP SILICON POWER TRANSISTORS PNP ... designed for use in general-purpose amplifier and switching FEATURES: * Recommend for 150W High Fiderity Audio Frequency Amplifier . Output stage 17 AMPERE Complementary to 2SC3858 POWER TRANASISTOR 200 VOLTS 200 WATTS MAXIMUM RATINGS Characteristic Symbol 2SA1494 Unit Collector-Emitter Voltage Veco 200 Vv Collector-Base Voltage Veso 200 Vv Emitter-Base Voltage V, 6.0 V 9 EBO TO-247(3P) Collector Current - Continuous le 17 A - B Peak lom 20 a. Me 0. Base current lp 2.0 A Ne rl | , Total Power Dissipation @T, = 25C Py 200 w "Taal FEI Derate above 25C 1.6 wirc 4 Operating and Storage Junction Ty .Ts1 C H f it r Temperature Range -55 to +150 \ || a P L THERMAL CHARACTERISTICS PIN 1.BASE 2.COLLECTOR Characteristic Symbol Max Unit 3.EMITTER Thermal Resistance Junction to Case Rejc 0.625 CAV DIM MILLIMETERS MIN MAX A 20.63 | 22.38 500 FIGURE -1 POWER DERATING B 1538 | 16.20 = Cc 1.90 2.70 E 17 D 5.10 6.10 < E 14.81 15.22 = 180 F | 11.72 | 1284 & 125 G 4.20 | 450 < H 1.82 2.46 g 100 292 | 323 a 75 J 089 | 153 i K 5.26 | 5.66 3 50 L | 1850 | 21.50 & 55 M 468 | 5.36 a 0 N 2.40 2.80 O 3.25 3.65 0 2B 50 7 100 12 150 Pp O55 0.70 To , TEMPERATURE( C)2SA1494 PNP ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Viericeo V (1,= 50 mA, I,=0 ) 200 Collector Cutoff Current lopo uA ( Vep= 200 V, i,= 0) 100 Emitter Cutoff Current leno uA ( Vep= 6.0 V, I,= 0) 100 ON CHARACTERISTICS (1) DC Current Gain ( I,= 8.0 A, Vog= 4.0 V ) hFE 30 Collector-Emitter Saturation Voitage Vee(sat) V (1g= 10A, 1Z= 1.0A) 2.5 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product fy . MHz (lg = 1.0 A, Veg = 12 V, f = 1.0 MHz ) 10 SWITCHING CHARATERISTICS Turn-on Time Voe 40 V, p= 10A ton 0.60(typ) us : Ip4= -lpo= 1.0A . Storage Time Bi ~'B2 t 0.90) us g R, = 4.0 ohm (typ) Fall Time ty 0.30(typ) us (1) Pulse Test: Pulse Width =300 us,Duty Cycle = 2.0%2SA1494 PNP ae TG ACTIVE-REGION SAFE OPERATING AREA (SOA) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate = Ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typig=150 C;T is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided PULSE Tupmst50C,At high case temperatures, thermal limita - CURVES MUST BE tion will reduce the power that can be handled to values LINEARLY WITH INCREASE nee IN TEMPERATURE less than the limitations imposed by second breakdown. a 8s 10 lc, COLLECTOR CURRENT (Amp.) 3 ww 2 = 2.0 5.0 10 20 30 50 100 Vee , COLLECTOR EMITTER (VOLTS) DC CURRENT GAIN Ic - Vee 18 2125 C COMMON EMITTER oet4.0V Z <= 25 6 a 12 g x oO & we 3 3 e 8 o w a od = B60 2 0.02 005 0 le couEcToR CURRENT (ANeP) 5.0 0 20 9 ve , COLLECT! OREMMTER VOLTAGE) 40 G.-t VCE(sat)-l5 Nv o THERMAL RESISTANCE Oj* CC/W) =~ o 120A Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) le=5A o 3.0 oOo 1 10 100 1000 Time (ms) 1.0 2.0 Is , COLLECTOR CURRENT (A)