Original Creation Date: 03/12/96
Last Update Date: 07/30/96
Last Major Revision Date: 03/12/96
MN54F38-X REV 1A0 MILITARY DATA SHEET
QUAD 2-INPUT NAND BUFFER (OPEN COLLECTOR)
General Description
The device contains four independent gates, each of which performs the logic NAND
function. The open-collector outputs require external pull-up resistors for proper
logical operation.
NS Part Numbers
54F38DMQB
54F38FMQB
54F38LMQB
Industry Part Number
54F38
Prime Die
M038
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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MILITARY DATA SHEET
MN54F38-X REV 1A0
(Absolute Maximum Ratings)
(Note 1)
Storage Temperature -65 C to +150 C
Ambient Temperature under Bias -55 C to +125 C
Junction Temperature under Bias -55 C to +175 C
Vcc Pin Potential to Ground Pin -0.5V to +7.0V
Input Voltage
(Note 2) -0.5V to +7.0V
Input Current
(Note 2) -30 mA to +5.0mA
Voltage Applied to Output in HIGH State (with Vcc=0V) -0.5V to VccStandard Output -0.5V to +5.5VTRI-STATE Output
Current Applied to Output in LOW State (Max) twice the rated Iol(mA)
ESD Last Passing Voltage (Min) 4000V
Note 1: Absolute Maximum ratings are those values beyond which the device may be damaged or
have its useful life impaired. Functional operation under these conditions is not
implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
Recommended Operating Conditions
Free Air Ambient Temperature 0 C to +70 CCommercial -55 C to +125 CMilitary
Supply Voltage +4.5V to +5.5VMilitary +4.5V to +5.5VCommercial
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MN54F38-X REV 1A0 MILITARY DATA SHEET
Electrical Characteristics
DC PARAMETER
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: VCC 4.5V to 5.5V, Temp range: -55C to 125C
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
IIH Input High
Current VCC=5.5V, VM=2.7V, VINH=5.5V,
VINL=0.0V 1, 3 INPUTS 20 uA 1, 2,
3
IBVI Input High
Current VCC=5.5V, VM=7.0V, VINH=5.5V,
VINL=0.0V 1, 3 INPUTS 100 uA 1, 2,
3
IIL Input LOW Current VCC=5.5V, VM=0.5V, VINH=5.5V,
VINL=0.0V 1, 3 INPUTS -1.2 mA 1, 2,
3
IOH Open Collector
Output VCC=4.5V, VM=4.5V, VIL=0.8V, VINH=5.5V 1, 3 OUTPUTS 250 uA 1, 2,
3
VOLB Output LOW
Voltage VCC=4.5V, VIL=0.8V, VIH=2.0V,
IOLB=48mA, VINH=5.5V 1, 3 OUTPUTS .55 V 1, 2,
3
VCD Input Clamp Diode
Voltage VCC=4.5V, IM=-18mA, VINH=5.5V 1, 3 INPUTS -1.2 V 1, 2,
3
ICCH Supply Current VCC=5.5V, VINL=0.0V, VINH=5.5V 1, 3 VCC 7.0 mA 1, 2,
3
ICCL Supply Current VCC=5.5V, VINL=0.0V, VINH=5.5V 1, 3 VCC 30.0 mA 1, 2,
3
AC PARAMETER
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: CL=50pf, RL=500 OHMS, TR=2.5ns, TF=2.5ns SEE AC FIGS
tpLH Propagation Delay VCC=5.0V @25C, VCC=4.5V & 5.5V
@-55/125C 2, 4 An/Bn
to On 6.5 12.5 ns 9
2, 4 An/Bn
to On 6.5 14.5 ns 10, 11
tpHL Propagation Delay VCC=5.0V @25C, VCC=4.5V & 5.5V
@-55/125C 2, 4 An/Bn
to On 1.0 5.0 ns 9
2, 4 An/Bn
to On 1.0 5.5 ns 10, 11
Note 1: Screen tested 100% on each device at +25C, +125C & -55C temperature, subgroups A1, 2,
3, 7 & 8.
Note 2: Screen tested 100% on each device at +25C temperature only, subgroup A9.
Note 3: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C, +125C & -55C
temperature, subgroups A1, 2, 3, 7 & 8.
Note 4: Sample tested (Method 5005, table 1) on each MFG. lot at +25C subgroup A9, and
periodically at +125C & -55C temperature, subgroups 10 & 11.
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