Jan. 2012 Version 1.0 MagnaChip Semiconductor Ltd.
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MDF9N60B N-channel MOSFET 600V
Absolute Maximum Ratings (Ta = 25
o
C)
Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±30 V
Continuous Drain Current(※)
TC=25oC ID 9.0* A
TC=100oC 5.7* A
Pulsed Drain Current(1) IDM 32* A
Power Dissipation
TC=25oC
PD
48 W
W/ oC
Derate above 25 oC 0.38
Repetitive Avalanche Energy(1) EAR 4.8 mJ
Peak Diode Recovery dv/dt(3) dv/dt 4.5 V/ns
Single Pulse Avalanche Energy(4) EAS 480 mJ
Junction and Storage Temperature Range TJ, Tstg -55~150 oC
※ Id limited by maximum junction temperature
Thermal Characteristics
Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient(1) RθJA 62.5 oC/W
Thermal Resistance, Junction-to-Case(1) RθJC 2.62
S
D
G
MDF9N60
B
N-Channel MOSFET 600V, 9A, 0.80
Ω
ΩΩ
Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 9.0A @ VGS = 10V
RDS(ON) ≤ 0.80Ω @ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
Jan. 2012 Version 1.0 MagnaChip Semiconductor Ltd.
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MDF9N60B N-channel MOSFET 600V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
MDF9N60BTH -55~150oC TO-220F Tube Halogen Free
Electrical Characteristics (Ta =25
o
C)
Characteristics Symbol
Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 600 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 - 4.0
Drain Cut-Off Current IDSS VDS = 600V, VGS = 0V - - 1 µA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 4.5A 0.65 0.80 Ω
Forward Transconductance gfs VDS = 30V, ID = 4.5A - 7.0 - S
Dynamic Characteristics
Total Gate Charge Qg
VDS = 480V, ID = 9.0A, VGS = 10V(3)
- 23.9
nC Gate-Source Charge Qgs - 5.1
Gate-Drain Charge Qgd - 8.3
Input Capacitance Ciss
VDS = 25V, VGS = 0V, f = 1.0MHz
- 1226
pF Reverse Transfer Capacitance Crss - 6.2
Output Capacitance Coss - 134
Turn-On Delay Time td(on)
VGS = 10V, VDS = 300V, ID = 9.0A,
RG = 25Ω(3)
- 21.5
ns
Rise Time tr - 33.4
Turn-Off Delay Time td(off) - 100.3
Fall Time tf - 41.6
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current IS - 9 - A
Source-Drain Diode Forward
Voltage VSD IS = 9.0A, VGS = 0V - 1.4 V
Body Diode Reverse Recovery
Time trr
IF = 9.0A, dl/dt = 100A/µs(3)
- 360 ns
Body Diode Reverse Recovery
Charge Qrr - 3.9 µC
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤9.0A, di/dt≤200A/us, VDD≤BVDSS, Rg =25Ω, Starting TJ=25°C
4. L=10.8mH, IAS=9.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Jan. 2012 Version 1.0 MagnaChip Semiconductor Ltd.
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MDF9N60B N-channel MOSFET 600V
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
-50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :※
1. VGS = 0 V
2. ID = 250㎂
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
4 8 12 16
0.6
0.8
1.0
V
GS
=10.0V
V
GS
=20V
RDS(ON) [Ω ]
ID
,Drain Current [A]
2 4 6 8
0.1
1
10
-55℃
25℃150℃
* Notes ;
1. Vds=30V
ID(A)
V
GS
[V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
25℃
150℃
Notes :※
1. VGS = 0 V
2.250µs Pulse test
IDR
Reverse Drain Current [A]
VSD, Source-Drain Voltage [V]
-50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :※
※※
※
1. VGS = 10 V
2. ID = 4.5A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
0 5 10 15
0
4
8
12
16
20
Notes
1. 250㎲
㎲㎲
㎲ Pulse Test
2. T
C
=25℃
℃℃
℃
V
gs
=5.0V
=5.5V
=6.0V
=6.5V
=7.0V
=10.0V
=15.0V
ID,Drain Current [A]
V
DS
,Drain-Source Voltage [V]
Jan. 2012 Version 1.0 MagnaChip Semiconductor Ltd.
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MDF9N60B N-channel MOSFET 600V
Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
0 4 8 12 16 20 24 28
0
2
4
6
8
10
120V
300V
480V
Note : I※
※※
※D = 9.0A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig.12 Maximum Drain Current vs. Case
Temperature
Fig.
10
Transient Thermal Response Curve
Fig.11 Single Pulse Maximum Power
Dissipation
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
Notes :※
Duty Factor, D=t1/t2
PEAK TJ = PDM
* Zθ JC
* Rθ JC
(t) + TC
R
Θ JC
=2.62 /W℃
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JC
(t),
Thermal Response
t1, Rectangular Pulse Duration [sec]
25 50 75 100 125 150
0
2
4
6
8
10
ID, Drain Current [A]
TC, Case Temperature [ ]℃
1 10
0
500
1000
1500
2000
2500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;※
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
10-1 100101102
10-2
10-1
100
101
102
1s
10 µs
100 µs
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max rated
TC=25℃
℃℃
℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
1E-5 1E-4 1E-3 0.01 0.1 1 10
0
2000
4000
6000
8000
10000
12000
14000
16000
single Pulse
RthJC = 2.62 /W℃
℃℃
℃
TC = 25℃
℃℃
℃
Power (W)
Pulse Width (s)
Jan. 2012 Version 1.0 MagnaChip Semiconductor Ltd.
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MDF9N60B N-channel MOSFET 600V
Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Symbol Min Nom Max
A 4.50 4.93
b 0.63 0.91
b1 1.15 1.47
C 0.33 0.63
D 15.47 16.13
E 9.60 10.71
e 2.54
F 2.34 2.84
G 6.48 6.90
L 12.24 13.72
L1 2.79 3.67
Q 2.52 2.96
Q1 3.10 3.50
￠R 3.00 3.55
Jan. 2012 Version 1.0 MagnaChip Semiconductor Ltd.
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MDF9N60B N-channel MOSFET 600V
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DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.
