ATF-35143
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Features
Lead-free Option Available
Low Noise Figure
Excellent Uniformity in Product Speci cations
Low Cost Surface Mount Small Plastic Package
SOT-343 (4 lead SC-70)
Tape-and-Reel Packaging Option Available
Speci cations
1.9 GHz; 2 V, 15 mA (Typ.)
0.4 dB Noise Figure
18 dB Associated Gain
11 dBm Output Power at 1 dB Gain Compression
21 dBm Output 3rd Order Intercept
Applications
Low Noise Ampli er for Cellular/PCS Handsets
LNA for WLAN, WLL/RLL, LEO, and MMDS Applications
General Purpose Discrete PHEMT for Other Ultra Low
Noise Applications
Description
Avago’s ATF-35143 is a high dynamic range, low noise,
PHEMT housed in a 4-lead SC-70 (SOT-343) surface
mount plastic package.
Based on its featured performance, ATF-35143 is suitable
for applications in cellular and PCS base stations, LEO
systems, MMDS, and other systems requiring super low
noise gure with good intercept in the 450 MHz to 10
GHz frequency range.
Other PHEMT devices in this family are the ATF-34143
and the ATF-33143. The typical speci cations for these
devices at 2 GHz are shown in the table below:
Surface Mount Package
SOT-343
Pin Connections and Package Marking
Part No. Gate Width Bias Point NF (dB) Ga (dB) OIP3 (dBm)
ATF-33143 1600 μ 4V, 80 mA 0.5 15.0 33.5
ATF-34143 800 μ 4V, 60 mA 0.5 17.5 31.5
ATF-35143 400 μ 2V, 15 mA 0.4 18.0 21.0
SOURCE
DRAIN
GATE
SOURCE
5Px
Note: Top View. Package marking provides
orientation and identi cation.
“5P” = Device code
“x” = Date code character. A new character
is assigned for each month, year.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
2
ATF-35143 Absolute Maximum Ratings[1]
Absolute
Symbol Parameter Units Maximum
V
DS Drain - Source Voltage[2] V 5.5
V
GS Gate - Source Voltage[2] V -5
V
GD Gate Drain Voltage[2] V -5
I
DS Drain Current[2] mA Idss[3]
P
diss Total Power Dissipation[4] mW 300
P
in max RF Input Power dBm 14
T
CH Channel Temperature °C 160
T
STG Storage Temperature °C -65 to 160
jc Thermal Resistance[5] °C/W 150
Notes:
1. Operation of this device above any
one of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. VGS = 0V
4. Source lead temperature is 25°C.
Derate 3.2 mW/°C for TL > 67°C.
5. Thermal resistance measured using
QFI Measurement method.
Product Consistency Distribution Charts [7, 8]
VDS (V)
Figure 1. Typical Pulsed I-V Curves[6].
(VGS = -0.2 V per step)
IDS (mA)
02 4 68
120
100
80
60
40
20
0
+0.6 V
0 V
–0.6 V
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 2V, 15 mA.
LSL=19.0, Nominal=20.9, USL=23.0
19 2120 2322 24
120
100
80
60
40
20
0
-3 Std +3 Std
Cpk = 1.73
Std = 0.35
NF (dB)
Figure 3. NF @ 2 GHz, 2V, 15 mA.
LSL=0.2, Nominal=0.37, USL=0.7
0.2 0.40.3 0.60.5 0.7
200
160
120
80
40
0
-3 Std +3 Std
Cpk = 3.7
Std = 0.03
GAIN (dB)
Figure 4. Gain @ 2 GHz, 2V, 15 mA.
LSL=16.5, Nominal=18.0, USL=19.5
16 17 18 19 20
160
120
80
40
0
-3 Std +3 Std
Cpk = 2.75
Std = 0.17
Notes:
6. Under large signal conditions, VGS may swing positive and the drain current may exceed Idss. These conditions are acceptable as long as the
maximum Pdiss and Pin max ratings are not exceeded.
7. Distribution data sample size is 450 samples taken from 9 di erent wafers. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
8. Measurements made on production test board. This circuit represents a trade-o between an optimal noise match and a realizeable match
based on production test requirements. Circuit losses have been de-embedded from actual measurements.
3
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements.
This circuit represents a trade-o between an optimal noise match and a realizable match based on production test requirements.
Circuit losses have been de-embedded from actual measurements.
Input 50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag = 0.66
Γ_ang = 5°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
ATF-35143 Electrical Speci cations
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol Parameters and Test Conditions Units Min. Typ.[2] Max.
I
dss[1] Saturated Drain Current VDS = 1.5 V, VGS = 0 V mA 40 65 80
V
P[1] Pincho Voltage VDS = 1.5 V, IDS = 10% of Idss V -0.65 -0.5 -0.35
I
d Quiescent Bias Current VGS = 0.45 V, VDS = 2 V mA — 15 —
g
m[1] Transconductance VDS = 1.5 V, gm = Idss /VP mmho 90 120 —
I
GDO Gate to Drain Leakage Current VGD = 5 V μA 250
I
gss Gate Leakage Current VGD = VGS = -4 V μA — 10 150
f = 2 GHz VDS = 2 V, IDS = 15 mA dB 0.4 0.7
NF Noise Figure[3] V
DS = 2 V, IDS = 5 mA 0.5 0.9
f = 900 MHz VDS = 2 V, IDS = 15 mA dB 0.3
VDS = 2 V, IDS = 5 mA 0.4
f = 2 GHz VDS = 2 V, IDS = 15 mA dB 16.5 18 19.5
Ga
Associated Gain[3] V
DS = 2 V, IDS = 5 mA 14 16 18
f = 900 MHz VDS = 2 V, IDS = 15 mA dB 20
V
DS = 2 V, IDS = 5 mA 18
Output 3rd Order
f = 2 GHz VDS = 2 V, IDS = 15 mA dBm 19 21
OIP3
Intercept Point[4, 5]
V
DS = 2 V, IDS = 5 mA 14
f = 900 MHz VDS = 2 V, IDS = 15 mA dBm 19
V
DS = 2 V, IDS = 5 mA 14
1 dB Compressed
f = 2 GHz VDS = 2 V, IDSQ = 15 mA dBm 10
P1dB
Intercept Point[4]
V
DS = 2 V, IDSQ = 5 mA 8
f = 900 MHz VDS = 2 V, IDSQ = 15 mA dBm 9
V
DS = 2 V, IDSQ = 5 mA 9
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. 2V 5 mA min/max data guaranteed via the 2V 15 mA production test.
4. Measurements obtained using production test board described in Figure 5.
5. Pout = -10 dBm per tone
4
ATF-35143 Typical Performance Curves
Notes:
1. Measurements made on a xed tuned production test board that was tuned for optimal gain match with reasonable noise gure at 2 V 15 mA
bias. This circuit represents a trade-o between optimal noise match, maximum gain match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
2.
P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain
current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power
output approaches P1dB. This results in higher P1dB and higher PAE (power added e ciency) when compared to a device that is driven by a constant
current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is
approached.
I
DSQ
(mA)
Figure 6. OIP3 and P
1dB
vs. Bias at 2GHz.
[1,2]
OIP3, P
1dB
(dBm)
060
30
25
20
15
10
5
0
2010 40 5030
2 V
3 V
4 V
OIP3
P
1dB
I
DSQ
(mA)
Figure 7. OIP3 and P
1dB
vs. Bias at 900MHz.
[1,2]
OIP3, P
1dB
(dBm)
0602010 40 5030
2 V
3 V
4 V
OIP3
P
1dB
30
25
20
15
10
5
I
DSQ
(mA)
Figure 8. NF and G
a
vs. Bias at 2GHz.
[1]
Ga (dB)
0602010 40 5030
2 V
3 V
4 V
G
a
NF
20
19
18
17
16
15
NF (dB)
2.5
2
1.5
1
0.5
0
I
DSQ
(mA)
Figure 9. NF and G
a
vs. Bias at 900MHz.
[1]
Ga (dB)
0602010 40 5030
2 V
3 V
4 V
G
a
NF
24
22
20
18
16
14
NF (dB)
2.5
2
1.5
1
0.5
0
I
DS
(mA)
Figure 10. P
1dB
vs. Bias (Active Bias)
Tuned for NF @ 2V, 15 mA at 2GHz.
[1]
P
1dB
(dBm)
080
25
20
15
10
5
0
-5
20 40 60
2 V
3 V
4 V
I
DS
(mA)
Figure 11. P
1dB
vs. Bias (Active Bias)
Tuned for NF @ 2V, 15 mA at 900MHz.
[1]
P
1dB
(dBm)
08020 40 60
2 V
3 V
4 V
20
15
10
5
0
-5
5
ATF-35143 Typical Performance Curves, continued
Notes:
1. Measurements made on a xed tuned test xture that was tuned for noise gure at 2 V 15mA bias. This circuit represents a trade-o between
optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de-
embedded from actual measurements.
2.
P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is running closer to class B as
power output approaches P1dB. This results in higher P1dB and higher PAE (power added e ciency) when compared to a device that is driven by a
constant current source as is typically done with active biasing. As an example, at a VDS = 4V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15
dBm is approached.
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and Current at 2V.
F
min
(dB)
010
1.50
1.25
1.00
0.75
0.50
0.25
0
4286
5 mA
15 mA
30 mA
FREQUENCY (GHz)
Figure 13. Associated Gain vs.
Frequency and Current at 2V.
F
min
(dB)
010
25
20
15
10
5
4286
5 mA
15 mA
30 mA
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency and
Temperature, VDS=2V, IDS=15 mA.
G
a
(dB)
08246
25C
-40C
85C
22
20
18
16
14
12
I
DS
(mA)
Figure 16. OIP3, P1dB, NF and Gain vs. Bias[1]
(Active Bias, 2V, 3.9 GHz).
OIP3, P
1dB
(dBm), Gain (dB)
08020 40 60
P
1dB
OIP3
Gain
NF
25
20
15
10
5
0
NF (dB)
2.5
2
1.5
1
0.5
0
NF (dB)
1.0
0.8
0.6
0.4
0.2
0
I
DS
(mA)
Figure 17. OIP3, P1dB, NF and Gain vs. Bias[1]
(Active Bias, 2V, 5.8 GHz).
OIP3, P
1dB
(dBm), Gain (dB)
08020 40 60
P
1dB
OIP3
Gain
NF
25
20
15
10
5
0
-5
NF (dB)
3
2.5
2
1.5
1
0.5
0
FREQUENCY (GHz)
Figure 15. OIP3 and P1dB vs. Frequency and
Temperature[1,2], VDS=2V, IDS=15mA.
OIP3, P
1dB
(dBm)
08246
25C
-40C
85C
25
20
15
10
5
6
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 5 mA
Freq. Fmin opt R
n/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.10 0.91 6.4 0.22 19.3
0.9 0.12 0.87 15.0 0.22 17.9
1.0 0.14 0.86 17.2 0.22 17.5
1.5 0.20 0.81 28.0 0.22 16.3
1.8 0.23 0.78 33.4 0.21 15.8
2.0 0.27 0.76 38.8 0.21 15.4
2.5 0.33 0.71 50.0 0.19 14.7
3.0 0.39 0.66 61.9 0.17 14.0
4.0 0.52 0.58 87.2 0.13 12.7
5.0 0.64 0.52 114.4 0.09 11.5
6.0 0.77 0.47 143.2 0.06 10.4
7.0 0.89 0.43 173.5 0.05 9.5
8.0 1.02 0.41 -155.2 0.07 8.7
9.0 1.14 0.40 -122.9 0.13 8.0
10.0 1.27 0.41 -90.1 0.24 7.5
FREQUENCY (GHz)
Figure 18. MSG/MAG and |S21|2 vs. Frequency at 2 V, 5 mA.
MSG/MAG and S21 (dB)
020
25
20
15
10
5
0
-5
51015
MSG
MAG
S21
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 5 mA
Freq. S11 S
21 S
12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -16.90 13.34 4.64 166.04 -31.70 0.026 77.91 0.73 -12.47 22.52
0.75 0.98 -26.37 13.29 4.62 157.78 -28.18 0.039 71.12 0.72 -17.53 20.83
1.00 0.97 -34.76 13.16 4.55 150.72 -25.85 0.051 65.76 0.71 -23.33 19.50
1.50 0.94 -50.59 12.83 4.38 137.02 -22.73 0.073 54.85 0.68 -34.88 17.78
1.75 0.91 -58.26 12.66 4.30 130.38 -21.62 0.083 49.69 0.67 -40.49 17.13
2.00 0.90 -65.74 12.44 4.19 123.90 -20.72 0.092 44.45 0.65 -46.03 16.58
2.50 0.85 -80.62 12.04 4.00 111.27 -19.33 0.108 34.61 0.62 -56.68 15.69
3.00 0.81 -95.48 11.61 3.81 99.08 -18.27 0.122 25.21 0.59 -66.71 14.94
4.00 0.72 -125.99 10.71 3.43 75.75 -17.08 0.140 6.95 0.52 -85.11 13.89
5.00 0.66 -156.09 9.79 3.09 53.63 -16.48 0.150 -9.83 0.45 -102.71 13.13
6.00 0.62 174.97 8.93 2.80 32.77 -16.14 0.156 -25.73 0.38 -120.16 12.53
7.00 0.60 145.61 8.06 2.53 12.43 -16.08 0.157 -41.00 0.31 -138.01 12.07
8.00 0.60 118.39 7.20 2.29 -7.12 -16.31 0.153 -54.14 0.25 -157.10 11.75
9.00 0.62 93.15 6.26 2.06 -26.14 -16.59 0.148 -67.05 0.20 -178.27 11.19
10.00 0.66 71.31 5.43 1.87 -44.14 -16.89 0.143 -78.09 0.16 157.62 9.63
11.00 0.70 50.91 4.58 1.69 -62.85 -17.14 0.139 -88.99 0.14 121.82 8.81
12.00 0.72 31.04 3.64 1.52 -81.42 -17.52 0.133 -100.38 0.17 82.33 7.87
13.00 0.74 11.26 2.56 1.34 -99.46 -18.13 0.124 -111.06 0.22 53.17 6.79
14.00 0.76 -3.08 1.45 1.18 -115.94 -18.79 0.115 -119.00 0.28 27.32 5.86
15.00 0.82 -14.26 0.43 1.05 -132.24 -19.25 0.109 -127.12 0.34 6.01 5.89
16.00 0.82 -26.64 -0.72 0.92 -149.24 -19.58 0.105 -135.42 0.42 -10.69 4.84
17.00 0.84 -38.94 -1.83 0.81 -164.44 -19.74 0.103 -143.49 0.49 -22.32 4.62
18.00 0.86 -54.78 -3.02 0.71 179.28 -20.18 0.098 -152.36 0.56 -35.90 4.04
7
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 10 mA
Freq. Fmin opt R
n/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.10 0.88 5.0 0.15 20.5
0.9 0.11 0.84 14.0 0.15 19.0
1.0 0.12 0.83 16.0 0.15 18.6
1.5 0.17 0.77 26.0 0.15 17.5
1.8 0.20 0.74 31.9 0.15 16.9
2.0 0.23 0.71 37.3 0.14 16.4
2.5 0.29 0.66 48.6 0.14 15.7
3.0 0.34 0.60 60.6 0.12 15.0
4.0 0.46 0.52 86.8 0.12 13.6
5.0 0.58 0.45 115.3 0.08 12.4
6.0 0.69 0.40 145.8 0.05 11.3
7.0 0.81 0.37 177.7 0.05 10.3
8.0 0.92 0.35 -149.3 0.07 9.5
9.0 1.04 0.35 -115.6 0.12 8.8
10.0 1.16 0.37 -81.8 0.22 8.3
FREQUENCY (GHz)
Figure 19. MSG/MAG and |S21|2 vs. Frequency at 2 V, 10 mA.
MSG/MAG and S21 (dB)
02051015
MSG
MAG
S21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at sixteen di erent impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 10 mA
Freq. S11 S
21 S
12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -18.75 15.89 6.23 164.76 -32.40 0.024 77.63 0.63 -14.09 24.14
0.75 0.97 -29.11 15.79 6.16 155.98 -28.87 0.036 70.58 0.61 -19.69 22.30
1.00 0.95 -38.28 15.61 6.03 148.42 -26.56 0.047 64.88 0.60 -26.10 21.08
1.50 0.91 -55.52 15.17 5.73 133.92 -23.61 0.066 54.16 0.57 -38.73 19.39
1.75 0.89 -63.78 14.92 5.57 127.01 -22.62 0.074 49.11 0.56 -44.79 18.75
2.00 0.86 -71.82 14.65 5.40 120.27 -21.72 0.082 44.08 0.54 -50.70 18.19
2.50 0.81 -87.59 14.11 5.08 107.36 -20.35 0.096 34.60 0.51 -61.95 17.23
3.00 0.76 -103.22 13.54 4.76 95.04 -19.41 0.107 25.71 0.47 -72.47 16.48
4.00 0.66 -134.81 12.40 4.17 71.95 -18.27 0.122 9.04 0.41 -91.47 15.34
5.00 0.61 -165.34 11.29 3.67 50.43 -17.65 0.131 -5.97 0.34 -110.05 14.47
6.00 0.58 165.88 10.27 3.26 30.28 -17.33 0.136 -20.15 0.27 -129.24 13.80
7.00 0.57 137.00 9.27 2.91 10.68 -17.14 0.139 -33.84 0.21 -150.49 13.21
8.00 0.58 110.78 8.33 2.61 -8.09 -17.14 0.139 -45.60 0.17 -174.77 12.73
9.00 0.61 86.75 7.32 2.32 -26.38 -17.20 0.138 -57.65 0.13 154.01 10.69
10.00 0.65 66.25 6.44 2.10 -43.90 -17.20 0.138 -68.22 0.11 118.18 9.85
11.00 0.69 46.88 5.54 1.89 -61.97 -17.27 0.137 -79.30 0.14 78.36 9.16
12.00 0.72 27.76 4.56 1.69 -79.90 -17.39 0.135 -90.87 0.19 49.57 8.34
13.00 0.74 8.62 3.45 1.49 -97.18 -17.79 0.129 -102.19 0.26 29.95 7.35
14.00 0.77 -5.28 2.33 1.31 -112.92 -18.20 0.123 -110.80 0.33 9.45 6.51
15.00 0.82 -16.03 1.29 1.16 -128.66 -18.56 0.118 -120.09 0.39 -7.98 6.51
16.00 0.82 -28.32 0.19 1.02 -144.87 -18.79 0.115 -129.92 0.45 -22.30 5.48
17.00 0.84 -40.43 -0.87 0.91 -159.49 -18.79 0.115 -139.60 0.51 -32.23 5.24
18.00 0.86 -56.14 -1.99 0.80 -175.19 -19.33 0.108 -149.17 0.57 -44.43 4.72
8
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 15 mA
Freq. Fmin opt R
n/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.10 0.88 4.5 0.19 20.9
0.9 0.13 0.83 13.1 0.17 19.4
1.0 0.14 0.82 15.3 0.16 19.2
1.5 0.19 0.76 26.1 0.15 17.9
1.8 0.22 0.72 32.6 0.15 17.3
2.0 0.23 0.70 36.9 0.14 17.0
2.5 0.29 0.64 48.5 0.12 16.2
3.0 0.34 0.58 60.9 0.07 15.4
4.0 0.45 0.49 87.9 0.13 14.1
5.0 0.56 0.42 117.4 0.07 12.8
6.0 0.67 0.37 149.0 0.05 11.7
7.0 0.79 0.34 -178.1 0.05 10.8
8.0 0.90 0.33 -144.3 0.07 9.9
9.0 1.01 0.34 -110.2 0.13 9.2
10.0 1.12 0.36 -76.3 0.23 8.6
FREQUENCY (GHz)
Figure 20. MSG/MAG and |S21|2 vs. Frequency at 2 V, 15 mA.
MSG/MAG and S21 (dB)
02051015
MSG
MAG
S21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATF NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 15 mA
Freq. S11 S
21 S
12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -19.75 17.02 7.10 164.04 -32.77 0.023 77.60 0.57 -14.99 24.89
0.75 0.97 -30.58 16.90 7.00 154.98 -29.37 0.034 70.54 0.55 -20.86 23.05
1.00 0.95 -40.15 16.69 6.83 147.18 -27.13 0.044 64.80 0.54 -27.61 21.91
1.50 0.90 -58.08 16.18 6.44 132.28 -24.15 0.062 54.23 0.51 -40.74 20.17
1.75 0.87 -66.65 15.90 6.23 125.22 -23.10 0.070 49.25 0.49 -46.95 19.53
2.00 0.84 -74.93 15.59 6.02 118.41 -22.27 0.077 44.36 0.48 -53.06 18.93
2.50 0.79 -91.13 14.97 5.61 105.38 -20.92 0.090 35.36 0.44 -64.59 17.95
3.00 0.73 -107.08 14.34 5.21 93.08 -20.00 0.100 26.85 0.41 -75.32 17.17
4.00 0.64 -139.07 13.09 4.51 70.17 -18.94 0.113 11.15 0.35 -94.59 16.01
5.00 0.59 -169.70 11.90 3.93 49.03 -18.27 0.122 -2.96 0.29 -113.89 15.09
6.00 0.56 161.74 10.81 3.47 29.27 -17.79 0.129 -16.43 0.23 -134.46 14.30
7.00 0.56 133.19 9.77 3.08 10.04 -17.59 0.132 -29.47 0.17 -158.65 13.68
8.00 0.57 107.56 8.78 2.75 -8.35 -17.46 0.134 -40.80 0.14 172.14 12.29
9.00 0.60 84.16 7.75 2.44 -26.29 -17.39 0.135 -52.63 0.11 134.01 10.74
10.00 0.64 64.19 6.86 2.20 -43.56 -17.33 0.136 -63.33 0.12 95.85 9.99
11.00 0.68 45.46 5.93 1.98 -61.33 -17.27 0.137 -74.77 0.16 63.20 9.34
12.00 0.72 26.66 4.93 1.76 -78.94 -17.27 0.137 -86.46 0.22 40.01 8.57
13.00 0.74 7.70 3.80 1.55 -95.93 -17.59 0.132 -98.11 0.29 23.11 7.62
14.00 0.77 -5.93 2.68 1.36 -111.53 -17.92 0.127 -107.51 0.36 3.55 6.79
15.00 0.82 -16.54 1.63 1.21 -126.76 -18.20 0.123 -117.16 0.41 -12.09 6.76
16.00 0.82 -28.76 0.54 1.06 -142.70 -18.49 0.119 -127.03 0.47 -26.21 5.81
17.00 0.84 -40.79 -0.49 0.95 -157.02 -18.49 0.119 -137.06 0.53 -35.57 5.55
18.00 0.86 -56.40 -1.60 0.83 -172.47 -18.94 0.113 -147.50 0.58 -47.29 5.06
9
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 30 mA
Freq. Fmin opt R
n/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.11 0.87 2.7 0.18 21.6
0.9 0.15 0.81 12.1 0.17 20.2
1.0 0.16 0.80 14.5 0.16 19.9
1.5 0.22 0.73 26.3 0.15 18.7
1.8 0.25 0.69 33.4 0.15 18.0
2.0 0.27 0.66 38.1 0.14 17.7
2.5 0.33 0.60 50.6 0.13 17.0
3.0 0.39 0.54 64.2 0.12 16.2
4.0 0.52 0.45 94.0 0.10 14.8
5.0 0.64 0.39 126.5 0.07 13.5
6.0 0.77 0.34 160.6 0.05 12.4
7.0 0.90 0.33 -164.7 0.06 11.4
8.0 1.02 0.33 -130.3 0.10 10.5
9.0 1.15 0.36 -97.5 0.18 9.7
10.0 1.28 0.40 -67.0 0.30 9.1
FREQUENCY (GHz)
Figure 21. MSG/MAG and |S21|2 vs. Frequency at 2 V, 30 mA.
MSG/MAG and S21 (dB)
02051015
MSG
MAG
S21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATF NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 30 mA
Freq. S11 S
21 S
12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -20.95 18.17 8.10 163.18 -33.56 0.021 77.39 0.49 -15.99 25.87
0.75 0.96 -32.34 18.02 7.96 153.79 -30.17 0.031 70.55 0.47 -22.00 24.10
1.00 0.94 -42.36 17.77 7.73 145.67 -27.96 0.040 65.08 0.46 -29.03 22.86
1.50 0.88 -61.09 17.18 7.22 130.36 -25.04 0.056 54.79 0.43 -42.64 21.11
1.75 0.85 -69.98 16.85 6.96 123.20 -24.01 0.063 50.12 0.41 -48.96 20.42
2.00 0.82 -78.53 16.50 6.69 116.28 -23.22 0.069 45.58 0.39 -55.19 19.86
2.50 0.76 -95.14 15.81 6.17 103.17 -21.94 0.080 37.15 0.36 -66.91 18.87
3.00 0.70 -111.48 15.11 5.69 90.88 -21.01 0.089 29.29 0.34 -77.74 18.06
4.00 0.61 -143.89 13.73 4.86 68.24 -19.83 0.102 14.76 0.28 -97.29 16.78
5.00 0.56 -174.55 12.46 4.20 47.48 -19.02 0.112 1.63 0.23 -117.24 15.74
6.00 0.55 157.19 11.31 3.68 28.10 -18.49 0.119 -10.98 0.17 -139.78 14.90
7.00 0.55 129.18 10.22 3.24 9.28 -18.13 0.124 -23.67 0.13 -169.09 14.17
8.00 0.56 104.19 9.20 2.88 -8.75 -17.79 0.129 -34.72 0.11 155.22 11.98
9.00 0.60 81.48 8.15 2.56 -26.37 -17.59 0.132 -46.33 0.11 112.23 10.82
10.00 0.64 62.07 7.24 2.30 -43.37 -17.33 0.136 -57.43 0.13 77.30 10.15
11.00 0.68 43.83 6.29 2.06 -60.90 -17.20 0.138 -68.78 0.18 51.74 9.51
12.00 0.72 25.46 5.27 1.84 -78.22 -17.14 0.139 -81.32 0.24 32.67 8.77
13.00 0.74 6.81 4.14 1.61 -94.88 -17.33 0.136 -93.11 0.31 17.81 7.87
14.00 0.77 -6.74 3.01 1.41 -110.07 -17.65 0.131 -103.06 0.38 0.45 7.08
15.00 0.82 -17.21 1.94 1.25 -125.15 -17.86 0.128 -112.88 0.43 -15.44 7.06
16.00 0.83 -29.31 0.87 1.11 -140.80 -18.06 0.125 -123.55 0.49 -29.37 6.13
17.00 0.85 -41.30 -0.15 0.98 -154.83 -18.13 0.124 -134.43 0.54 -38.55 5.89
18.00 0.87 -56.87 -1.24 0.87 -170.03 -18.56 0.118 -144.88 0.60 -49.70 5.39
10
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 10 mA
Freq. Fmin opt R
n/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.12 0.87 4.7 0.21 20.0
0.9 0.16 0.82 13.2 0.19 19.0
1.0 0.17 0.81 15.3 0.19 18.8
1.5 0.22 0.75 25.9 0.17 17.8
1.8 0.26 0.71 32.3 0.16 17.2
2.0 0.28 0.68 36.5 0.16 16.7
2.5 0.33 0.62 47.7 0.14 15.9
3.0 0.39 0.57 59.6 0.13 15.1
4.0 0.49 0.49 85.4 0.10 13.7
5.0 0.60 0.43 113.6 0.08 12.5
6.0 0.71 0.38 143.7 0.05 11.4
7.0 0.81 0.36 175.6 0.05 10.4
8.0 0.92 0.34 -151.3 0.07 9.6
9.0 1.03 0.34 -117.3 0.12 8.9
10.0 1.13 0.35 -82.7 0.21 8.4
FREQUENCY (GHz)
Figure 22. MSG/MAG and |S21|2 vs. Frequency at 3 V, 10 mA.
MSG/MAG and S21 (dB)
02051015
MSG
MAG
S21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 10 mA
Freq. S11 S
21 S
12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -18.76 16.07 6.36 164.73 -32.77 0.023 76.79 0.65 -13.67 24.42
0.75 0.97 -29.12 15.97 6.29 155.93 -29.37 0.034 70.22 0.63 -19.08 22.70
1.00 0.95 -38.28 15.79 6.16 148.37 -27.13 0.044 64.53 0.62 -25.28 21.46
1.50 0.91 -55.52 15.34 5.85 133.87 -24.01 0.063 54.04 0.59 -37.48 19.68
1.75 0.88 -63.78 15.09 5.68 126.95 -22.97 0.071 49.13 0.57 -43.28 19.00
2.00 0.86 -71.79 14.82 5.51 120.22 -22.05 0.079 44.06 0.56 -49.01 18.43
2.50 0.81 -87.55 14.27 5.17 107.29 -20.82 0.091 34.85 0.52 -59.84 17.55
3.00 0.75 -103.15 13.71 4.85 95.00 -19.83 0.102 25.98 0.49 -69.88 16.77
4.00 0.66 -134.65 12.56 4.25 71.95 -18.71 0.116 9.56 0.42 -87.88 15.63
5.00 0.60 -165.16 11.45 3.74 50.50 -18.13 0.124 -5.10 0.35 -105.14 14.79
6.00 0.58 166.12 10.43 3.32 30.44 -17.79 0.129 -19.00 0.29 -122.61 14.11
7.00 0.56 137.25 9.44 2.97 10.91 -17.65 0.131 -32.32 0.23 -141.22 13.55
8.00 0.57 111.11 8.51 2.66 -7.80 -17.59 0.132 -43.61 0.18 -162.07 12.81
9.00 0.60 87.10 7.51 2.38 -26.05 -17.65 0.131 -55.14 0.13 172.01 10.75
10.00 0.64 66.58 6.64 2.15 -43.52 -17.65 0.131 -65.42 0.10 139.11 9.98
11.00 0.68 47.31 5.76 1.94 -61.59 -17.65 0.131 -76.27 0.11 93.44 9.32
12.00 0.71 28.18 4.81 1.74 -79.58 -17.72 0.130 -87.47 0.16 57.88 8.54
13.00 0.74 9.02 3.71 1.53 -96.96 -17.99 0.126 -98.60 0.23 35.32 7.59
14.00 0.77 -4.82 2.61 1.35 -112.95 -18.34 0.121 -107.41 0.29 13.11 6.76
15.00 0.82 -15.65 1.60 1.20 -128.77 -18.56 0.118 -116.63 0.35 -4.62 6.79
16.00 0.82 -28.00 0.51 1.06 -145.23 -18.71 0.116 -126.02 0.42 -19.61 5.79
17.00 0.84 -40.11 -0.55 0.94 -160.01 -18.71 0.116 -136.14 0.49 -29.62 5.54
18.00 0.86 -55.87 -1.68 0.82 -176.05 -19.25 0.109 -146.13 0.55 -41.92 5.05
11
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 15 mA
Freq. Fmin opt R
n/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.11 0.86 3.5 0.17 21.2
0.9 0.15 0.81 12.1 0.16 19.9
1.0 0.16 0.80 14.3 0.16 19.6
1.5 0.21 0.73 25.1 0.15 18.2
1.8 0.24 0.69 31.6 0.14 17.6
2.0 0.26 0.66 35.9 0.20 17.2
2.5 0.31 0.60 47.2 0.17 16.3
3.0 0.37 0.55 59.4 0.15 15.6
4.0 0.47 0.46 86.0 0.11 14.2
5.0 0.58 0.40 115.4 0.07 12.9
6.0 0.68 0.36 146.8 0.05 11.8
7.0 0.79 0.33 179.8 0.05 10.8
8.0 0.89 0.32 -146.1 0.07 10.0
9.0 1.00 0.32 -111.5 0.13 9.3
10.0 1.10 0.33 -76.8 0.22 8.8
FREQUENCY (GHz)
Figure 23. MSG/MAG and |S21|2 vs. Frequency at 3 V, 15 mA.
MSG/MAG and S21 (dB)
02051015
MSG
MAG
S21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 15 mA
Freq. S11 S
21 S
12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -19.76 17.20 7.24 164.03 -33.15 0.022 76.95 0.60 -14.39 25.17
0.75 0.96 -30.58 17.08 7.14 154.94 -29.90 0.032 69.88 0.58 -20.00 23.47
1.00 0.94 -40.14 16.86 6.97 147.12 -27.54 0.042 64.59 0.57 -26.48 22.20
1.50 0.90 -58.04 16.35 6.57 132.22 -24.58 0.059 54.00 0.54 -39.05 20.47
1.75 0.87 -66.61 16.06 6.35 125.16 -23.48 0.067 49.23 0.52 -45.00 19.78
2.00 0.84 -74.88 15.75 6.13 118.36 -22.62 0.074 44.39 0.50 -50.83 19.19
2.50 0.78 -91.02 15.13 5.71 105.32 -21.41 0.085 35.29 0.47 -61.71 18.27
3.00 0.73 -106.95 14.50 5.31 93.02 -20.45 0.102 27.00 0.44 -71.87 17.47
4.00 0.63 -138.86 13.24 4.59 70.17 -19.41 0.107 11.47 0.37 -89.81 16.32
5.00 0.58 -169.42 12.05 4.00 49.09 -18.79 0.115 -2.18 0.31 -107.23 15.42
6.00 0.56 162.05 10.97 3.53 29.39 -18.34 0.121 -15.36 0.24 -125.21 14.66
7.00 0.55 133.54 9.93 3.14 10.23 -18.06 0.125 -27.97 0.19 -145.42 14.00
8.00 0.56 107.88 8.96 2.81 -8.11 -17.92 0.127 -38.89 0.14 -168.81 12.23
9.00 0.60 84.56 7.95 2.50 -26.04 -17.86 0.128 -50.41 0.11 158.79 10.87
10.00 0.64 64.57 7.06 2.26 -43.28 -17.72 0.130 -60.57 0.09 118.59 10.16
11.00 0.68 45.84 6.16 2.03 -61.06 -17.59 0.132 -71.45 0.12 75.36 9.55
12.00 0.71 27.11 5.19 1.82 -78.75 -17.59 0.132 -83.32 0.18 46.94 8.80
13.00 0.74 8.18 4.09 1.60 -95.88 -17.79 0.129 -94.36 0.25 27.91 7.86
14.00 0.77 -5.58 2.98 1.41 -111.57 -18.06 0.125 -103.78 0.31 7.94 7.09
15.00 0.82 -16.18 1.96 1.25 -127.09 -18.27 0.122 -113.43 0.37 -8.87 7.04
16.00 0.82 -28.41 0.88 1.11 -143.31 -18.42 0.120 -123.35 0.44 -23.42 6.09
17.00 0.85 -40.49 -0.15 0.98 -157.87 -18.49 0.119 -134.06 0.50 -32.96 5.87
18.00 0.86 -56.20 -1.25 0.87 -173.65 -18.86 0.114 -144.46 0.56 -44.64 5.41
12
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 30 mA
Freq. Fmin opt R
n/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.11 0.87 3.5 0.18 21.6
0.9 0.16 0.81 12.5 0.17 20.5
1.0 0.17 0.79 14.7 0.17 20.2
1.5 0.23 0.72 25.9 0.16 18.9
1.8 0.27 0.68 32.6 0.15 18.3
2.0 0.28 0.65 37.1 0.15 17.9
2.5 0.35 0.59 49.3 0.14 17.0
3.0 0.41 0.53 62.5 0.12 16.3
4.0 0.53 0.43 91.6 0.09 14.9
5.0 0.66 0.37 123.4 0.07 13.6
6.0 0.79 0.33 157.1 0.05 12.4
7.0 0.91 0.31 -168.3 0.06 11.4
8.0 1.04 0.31 -133.7 0.10 10.6
9.0 1.17 0.33 -100.0 0.17 9.9
10.0 1.29 0.38 -68.1 0.28 9.3
FREQUENCY (GHz)
Figure 24. MSG/MAG and |S21|2 vs. Frequency at 3 V, 30 mA.
MSG/MAG and S21 (dB)
02051015
MSG
MAG
S21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 30 mA
Freq. S11 S
21 S
12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -21.01 18.45 8.36 163.08 -33.98 0.020 76.89 0.53 -15.23 26.21
0.75 0.96 -32.39 18.29 8.21 153.62 -30.46 0.030 69.94 0.51 -21.01 24.36
1.00 0.93 -42.42 18.03 7.97 145.49 -28.40 0.038 64.80 0.50 -27.72 23.22
1.50 0.88 -61.18 17.42 7.43 130.11 -25.35 0.054 54.32 0.47 -40.61 21.39
1.75 0.85 -70.01 17.09 7.15 122.91 -24.44 0.060 49.77 0.45 -46.56 20.72
2.00 0.82 -78.57 16.74 6.87 116.00 -23.61 0.066 45.15 0.43 -52.43 20.17
2.50 0.76 -95.09 16.03 6.33 102.87 -22.38 0.076 36.87 0.40 -63.37 19.21
3.00 0.70 -111.30 15.32 5.83 90.60 -21.41 0.085 29.08 0.37 -73.44 18.36
4.00 0.61 -143.48 13.93 4.97 68.04 -20.26 0.097 14.96 0.31 -91.21 17.10
5.00 0.56 -174.00 12.65 4.29 47.37 -19.58 0.105 2.38 0.25 -108.94 16.11
6.00 0.54 157.98 11.50 3.76 28.09 -19.02 0.112 -10.00 0.19 -128.04 15.26
7.00 0.54 130.06 10.42 3.32 9.32 -18.64 0.117 -22.21 0.14 -151.53 13.78
8.00 0.55 105.20 9.42 2.96 -8.66 -18.34 0.121 -32.79 0.11 179.40 12.10
9.00 0.59 82.53 8.39 2.63 -26.26 -18.06 0.125 -44.11 0.09 138.30 11.00
10.00 0.63 63.18 7.49 2.37 -43.25 -17.79 0.129 -54.57 0.09 95.15 10.36
11.00 0.67 44.96 6.56 2.13 -60.82 -17.52 0.133 -66.16 0.14 62.17 9.76
12.00 0.71 26.64 5.58 1.90 -78.23 -17.46 0.134 -78.18 0.20 39.86 9.05
13.00 0.74 7.94 4.46 1.67 -95.07 -17.65 0.131 -89.74 0.27 23.41 8.14
14.00 0.77 -5.53 3.36 1.47 -110.42 -17.86 0.128 -99.72 0.34 5.08 7.40
15.00 0.82 -16.02 2.33 1.31 -125.79 -17.99 0.126 -109.60 0.39 -11.42 7.41
16.00 0.82 -28.09 1.25 1.16 -141.72 -18.06 0.125 -120.39 0.46 -25.74 6.44
17.00 0.85 -40.02 0.23 1.03 -156.00 -18.06 0.125 -131.03 0.51 -35.29 6.19
18.00 0.87 -55.63 -0.85 0.91 -171.48 -18.49 0.119 -141.69 0.57 -46.81 5.71
13
ATF-35143 Typical Noise Parameters
VDS = 4 V, IDS = 30 mA
Freq. Fmin opt R
n/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.10 0.90 3.5 0.22 20.7
0.9 0.14 0.85 12.5 0.21 19.7
1.0 0.16 0.83 14.7 0.20 19.5
1.5 0.21 0.77 25.9 0.18 18.4
1.8 0.25 0.73 32.6 0.17 17.8
2.0 0.28 0.70 37.1 0.17 17.5
2.5 0.33 0.64 49.1 0.15 16.7
3.0 0.38 0.58 62.0 0.14 16.0
4.0 0.49 0.48 90.3 0.10 14.7
5.0 0.62 0.40 121.2 0.07 13.5
6.0 0.74 0.35 154.0 0.05 12.5
7.0 0.87 0.32 -172.2 0.06 11.5
8.0 0.99 0.31 -138.0 0.09 10.7
9.0 1.11 0.34 -104.2 0.15 10.0
10.0 1.24 0.39 -71.6 0.26 9.5
FREQUENCY (GHz)
Figure 25. MSG/MAG and |S21|2 vs. Frequency at 4 V, 30 mA.
MSG/MAG and S21 (dB)
02051015
MSG
MAG
S21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 30 mA
Freq. S11 S
21 S
12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -21.11 18.54 8.45 163.20 -33.98 0.020 77.63 0.56 -14.66 26.26
0.75 0.96 -32.57 18.38 8.30 153.72 -30.75 0.029 70.15 0.54 -20.35 24.55
1.00 0.94 -42.70 18.13 8.07 145.56 -28.64 0.037 64.68 0.53 -26.91 23.38
1.50 0.88 -61.55 17.53 7.53 130.19 -25.68 0.052 53.94 0.50 -39.45 21.61
1.75 0.85 -70.46 17.20 7.24 123.00 -24.58 0.059 49.29 0.48 -45.29 20.90
2.00 0.82 -79.07 16.84 6.95 116.04 -23.88 0.064 44.64 0.46 -50.94 20.36
2.50 0.76 -95.78 16.14 6.41 102.91 -22.62 0.074 36.30 0.43 -61.54 19.38
3.00 0.71 -112.14 15.43 5.91 90.63 -21.72 0.082 28.32 0.40 -71.17 18.58
4.00 0.62 -144.46 14.04 5.03 68.03 -20.72 0.092 13.98 0.34 -87.95 17.38
5.00 0.57 -174.93 12.76 4.34 47.35 -20.00 0.100 1.12 0.28 -104.23 16.38
6.00 0.55 157.13 11.61 3.81 28.07 -19.49 0.106 -11.07 0.22 -120.69 15.55
7.00 0.55 129.56 10.54 3.37 9.35 -19.25 0.109 -23.07 0.17 -139.29 14.19
8.00 0.57 104.96 9.55 3.00 -8.62 -18.94 0.113 -33.33 0.13 -160.54 12.47
9.00 0.60 82.47 8.53 2.67 -26.19 -18.79 0.115 -44.34 0.09 169.67 11.33
10.00 0.64 63.23 7.64 2.41 -43.13 -18.49 0.119 -54.44 0.07 128.74 10.70
11.00 0.68 45.01 6.74 2.17 -60.63 -18.27 0.122 -65.68 0.09 78.47 10.10
12.00 0.72 26.69 5.79 1.95 -78.09 -18.13 0.124 -77.35 0.15 47.96 9.40
13.00 0.74 8.00 4.71 1.72 -95.00 -18.27 0.122 -88.59 0.22 28.53 8.47
14.00 0.77 -5.46 3.64 1.52 -110.50 -18.42 0.120 -98.13 0.28 8.38 7.69
15.00 0.82 -16.18 2.65 1.36 -126.04 -18.49 0.119 -108.03 0.34 -8.46 7.76
16.00 0.82 -28.39 1.62 1.21 -142.14 -18.49 0.119 -118.41 0.40 -22.93 6.75
17.00 0.85 -40.51 0.64 1.08 -156.61 -18.49 0.119 -129.54 0.46 -32.29 6.53
18.00 0.86 -56.36 -0.44 0.95 -172.55 -18.86 0.114 -140.19 0.52 -43.97 6.00
14
ATF-35143 Typical Noise Parameters
VDS = 4 V, IDS = 60 mA
Freq. Fmin opt R
n/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.22 0.84 4.4 0.29 22.5
0.9 0.30 0.78 15.6 0.29 21.3
1.0 0.32 0.77 18.4 0.28 21.0
1.5 0.42 0.70 32.4 0.26 19.8
1.8 0.48 0.65 40.8 0.25 19.2
2.0 0.52 0.63 46.4 0.24 18.8
2.5 0.63 0.56 61.0 0.21 17.8
3.0 0.73 0.51 76.6 0.19 17.0
4.0 0.94 0.44 109.9 0.13 15.5
5.0 1.15 0.40 144.8 0.09 14.1
6.0 1.35 0.39 -179.8 0.08 12.9
7.0 1.56 0.40 -145.5 0.13 11.9
8.0 1.77 0.43 -113.7 0.26 11.0
9.0 1.98 0.47 -85.6 0.48 10.3
10.0 2.18 0.53 -62.6 0.79 9.8
FREQUENCY (GHz)
Figure 26. MSG/MAG and |S21|2 vs. Frequency at 4 V, 60 mA.
MSG/MAG and S21 (dB)
02051015
MSG
MAG
S21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
3. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA
Freq. S11 S
21 S
12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -21.27 18.15 8.09 163.09 -34.89 0.018 77.28 0.54 -13.50 26.52
0.75 0.96 -32.77 17.99 7.94 153.59 -31.70 0.026 70.40 0.53 -18.54 24.83
1.00 0.94 -42.95 17.74 7.71 145.40 -29.37 0.034 65.05 0.51 -24.50 23.55
1.50 0.88 -61.92 17.13 7.19 129.98 -26.56 0.047 55.14 0.48 -35.90 21.84
1.75 0.85 -70.88 16.79 6.91 122.76 -25.51 0.053 50.40 0.47 -41.17 21.15
2.00 0.82 -79.55 16.45 6.64 115.80 -24.73 0.058 46.34 0.45 -46.33 20.59
2.50 0.76 -96.36 15.74 6.12 102.60 -23.48 0.067 38.10 0.42 -55.86 19.61
3.00 0.70 -112.86 15.03 5.64 90.26 -22.62 0.074 30.61 0.39 -64.53 18.82
4.00 0.61 -145.47 13.64 4.81 67.52 -21.51 0.084 17.18 0.34 -79.32 17.58
5.00 0.57 -176.15 12.35 4.15 46.76 -20.82 0.091 5.47 0.29 -93.48 16.59
6.00 0.55 155.85 11.21 3.64 27.45 -20.26 0.097 -5.83 0.24 -107.07 15.74
7.00 0.55 128.25 10.14 3.21 8.68 -19.83 0.102 -17.10 0.19 -121.43 13.17
8.00 0.57 103.61 9.16 2.87 -9.34 -19.41 0.107 -26.34 0.15 -137.04 11.94
9.00 0.60 81.11 8.14 2.55 -27.02 -19.09 0.111 -36.93 0.11 -156.16 10.99
10.00 0.64 62.01 7.25 2.30 -44.01 -18.71 0.116 -46.43 0.07 178.65 10.38
11.00 0.69 43.90 6.37 2.08 -61.57 -18.27 0.122 -57.09 0.06 113.63 9.88
12.00 0.72 25.78 5.43 1.87 -79.17 -17.92 0.127 -68.92 0.10 60.75 9.26
13.00 0.75 7.31 4.37 1.65 -96.36 -17.92 0.127 -80.43 0.18 35.69 8.35
14.00 0.78 -6.12 3.30 1.46 -112.19 -17.92 0.127 -90.26 0.25 13.24 7.57
15.00 0.83 -16.62 2.29 1.30 -127.94 -17.86 0.128 -100.79 0.31 -4.12 7.78
16.00 0.84 -28.78 1.25 1.16 -144.27 -17.79 0.129 -112.14 0.39 -19.12 6.73
17.00 0.87 -40.91 0.21 1.03 -159.19 -17.79 0.129 -123.71 0.46 -28.89 6.65
18.00 0.88 -56.66 -0.92 0.90 -175.28 -17.99 0.126 -134.88 0.52 -40.92 6.06
15
Noise Parameter Applications Information
Fmin values at 2 GHz and higher are based on
measurements while the Fmins below 2 GHz have been
extrapolated. The Fmin values are based on a set of
16 noise gure measurements made at 16 di erent
impedances using an ATN NP5 test system. From these
measurements, a true Fmin is calculated. Fmin represents
the true minimum noise gure of the device when the
device is presented with an impedance matching network
that transforms the source impedance, typically 50Ω, to
an impedance represented by the re ection coe cient
o. The designer must design a matching network that
will present o to the device with minimal associated
circuit losses. The noise gure of the completed ampli er
is equal to the noise gure of the device plus the losses
of the matching network preceding the device. The
noise gure of the device is equal to Fmin only when the
device is presented with o. If the re ection coe cient
of the matching network is other than o, then the noise
gure of the device will be greater than Fmin based on the
following equation.
NF = Fmin + 4 Rn |
s –
o | 2
Zo (|1 +
o|2)(1 -
s|2)
Where Rn/Zo is the normalized noise resistance, o is
the optimum re ection coe cient required to produce
Fmin and s is the re ection coe cient of the source
impedance actually presented to the device. The losses
of the matching networks are non-zero and they will
also add to the noise gure of the device creating a
higher ampli er noise gure. The losses of the matching
networks are related to the Q of the components and
associated printed circuit board loss. o is typically fairly
low at higher frequencies and increases as frequency is
lowered. Larger gate width devices will typically have a
lower o as compared to narrower gate width devices.
Typically for FETs, the higher o usually infers that an
impedance much higher than 50Ω is required for the
device to produce Fmin. At VHF frequencies and even
lower L Band frequencies, the required impedance can
be in the vicinity of several thousand ohms. Matching to
such a high impedance requires very hi-Q components
in order to minimize circuit losses. As an example at
900 MHz, when airwwound coils (Q> 100) are used for
matching networks, the loss can still be up to 0.25 dB
which will add directly to the noise gure of the device.
Using muiltilayer molded inductors with Qs in the 30 to
50 range results in additional loss over the airwound coil.
Losses as high as 0.5 dB or greater add to the typical 0.15
dB Fmin of the device creating an ampli er noise gure
of nearly 0.65 dB. A discussion concerning calculated
and measured circuit losses and their e ect on ampli er
noise gure is covered in Avago Application 1085.
16
L=Lc L=Lb
R=Rb
L=Lb
R=Rb
L
CC=Ca
C
C=Cb
LOSSYL
L=Lb
R=Rb L=La*.5
L=Ld
L
L
LOSSYL
GATE_IN SOURCE
DRAIN_OUT
R
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
R=0.1 OH
LOSSYL
L=La L=Lb
R=Rb
LLOSSYL
L=Lb
R=Rb
LOSSYL
G
S
D
SOURCE
ATF-35143 SC-70 4 Lead, High Frequency Model
Optimized for 0.1– 6.0 GHz
This model can be used as a design tool. It has been tested
on MDS for various speci cations. However, for more precise
and accurate design, please refer to the measured data in
this data sheet. For future improvements Avago reserves
the right to change these models without prior notice.
NFETMESFET
G
MODEL=FET
W=400 μm
XX
D
XX
S
S
XX
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7
IDS model
DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
Gate model
RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
RC=Rc
Parasitics
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
N=
EG=
Breakdown
FNC=01e+6
R=.17
P=.65
C=.2
Noise
Model scal factors (W=FET width in microns)
EQUATION Cds=0.01*W/200
EQUATION Beta=0.06*W/200
EQUATION Rd=200/W
EQUATION Rs=.5*200/W
EQUATION Cgs=0.2*W/200
EQUATION Cgd=0.04*W/200
EQUATION Lg=0.03*200/W
EQUATION Ld=0.03*200/W
EQUATION Ls=0.01*200/W
EQUATION Rc=500*200/W
* STATZ MESFET MODEL *
MODEL = FET
ATF-35143 Die Model
17
Package Dimensions
SC-70 4L/SOT-343
Part Number Ordering Information
No. of
Part Number Devices Container
ATF-35143-TR1G 3000 7” Reel
ATF-35143-TR2G 10000 13” Reel
ATF-35143-BLKG 100 antistatic bag
HE
D
A2
A1
b
b1
E
1.30 (.051)
BSC
1.15 (.045) BSC
C
L
A
DIMENSIONS (mm)
MIN.
1.15
1.85
1.80
0.80
0.80
0.00
0.15
0.55
0.10
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.70
0.20
0.46
SYMBOL
E
D
HE
A
A2
A1
b
b1
c
L
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold ash & metal burr.
4. All specications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror nish.
Recommended PCB Pad Layout for
Avago’s SC70 4L/SOT-343 Products
1.30
0.051
0.60
0.024
0.9
0.035
Dimensions in mm
inches
1.15
0.045
2.00
0.079
1.00
0.039
Tape Dimensions and Product Orientation For Outline 4T
P
P0
P2
F
W
C
D1
D
E
A0
10° MAX.
t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)
10° MAX.
B0
K0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P0
E
1.55 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.061 + 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254 ± 0.02
0.315 + 0.012
0.0100 ± 0.0008
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
Tt
5.40 ± 0.10
0.062 ± 0.001
0.205 + 0.004
0.0025 ± 0.0004
COVER TAPE
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3748EN
AV02-1416EN - June 8, 2012
Device Orientation
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
5PX 5PX 5PX 5PX
