1SS193 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW (Tamb=25 C) Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1. o 0.95 0.4 0.95 2.4 1.3 2.9 1.9 o 1 Unit:mm Marking:F3 ELECTRICAL CHARACTERISTICS o (Ta=25 C unless otherwise specified) Parameter Symbol Test Condition MIN. MAX. 80 Unit Reverse breakdown voltage V (BR) I R =100 A Reverse Voltage leakage current IR V R =80V 0.5 Forward Voltage VF I F =100mA 1.2 V Diode Capacitance C tot V R =0V 3 pF Reverse Recovery Time t rr I F =I R =10mA I rr =0.1I R 4 nS f=1MHz V A 1SS193 Typical Characteristics IF - VF REVERSE CURRENT I R (A) FORWARD CURRENT I F (A) 100m T A =100 C 10m IR - VR 10 1 -25 C 25 C 1m 100 T A =100 C 1 75 C 100n 10n 1n 10 0 0.2 0.4 0.6 0.8 1.0 50 C 1.2 25 C 0 FORWARD VOLTAGE V F (V) 0.8 0.4 0.3 1 3 10 30 REVERSE VOLTAGE V R (V) 100 REVERSE RECOVERY TIME trr(ns) TOTAL CAPACITANCE C T (pF) f=1MHz Ta=25 C 1.2 0 40 60 80 REVERSE NOLTAGE V R (V) CT - VR 1.6 20 50 30 trr - I F Ta=25 C Fig.1 10 5 3 1 0.5 0.1 0.3 1 3 10 FORWARD CURRENT I F (mA) 30