Ordering number : ENN6911 MCH3409 N-Channel Silicon MOSFET MCH3409 Ultrahigh-Speed Switching Applications Preliminary Features * * Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2167 [MCH3409] 0.25 * 0.3 0.15 2 0.65 0.25 1 2.1 1.6 3 2.0 0.85 1 : Gate 2 : Source 3 : Drain 0.15 Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol SANYO : MCPH3 Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS 10 V ID 2.0 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW10s, duty cycle1% 8.0 A Mounted on a ceramic board (900mm20.8mm) 0.9 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Ratings min typ ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 20 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=1A 0.4 RDS(on)1 RDS(on)2 ID=1A, VGS=4V ID=0.5A, VGS=2.5V 2.4 Marking : KJ Unit max V 1 A 10 A 1.3 3.5 V S 100 130 m 130 180 m Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11801 TS IM TA-3049 No.6911-1/4 MCH3409 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 190 Output Capacitance 40 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 25 pF Turn-ON Delay Time td(on) See specified Test Circuit 9 ns Rise Time tr td(off) See specified Test Circuit 25 ns See specified Test Circuit 25 ns tf See specified Test Circuit 18 ns Qg VDS=10V, VGS=4V, ID=2.0A 2.7 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=4V, ID=2.0A VDS=10V, VGS=4V, ID=2.0A 0.6 Gate-to-Drain "Miller" Charge Diode Forward Voltage VSD IS=2.0A, VGS=0 Turn-OFF Delay Time Fall Time Total Gate Charge 0.6 nC 0.87 1.2 V Switching Time Test Circuit VDD=10V VIN 4V 0V ID=1A RL=10 VIN D VOUT PW=10s D.C.1% G P.G MCH3409 50 S ID -- VDS 0.6 0.4 1.0 Ta = 0.5 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 1.0A 150 ID=0.5A 100 50 0 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT02722 1.2 1.6 2.0 IT02721 RDS(on) -- Ta 250 250 1 0.8 Gate-to-Source Voltage, VGS -- V Ta=25C 0 0.4 IT02720 RDS(on) -- VGS 300 Static Drain-to-Source On-State Resistance, RDS(on) -- m --2 5 0.2 25C 0.8 1.5 C 2.5 1.0 2.0 C 1.2 75 Drain Current, ID -- A 2.5 V 4.0V 1.4 VGS=1.5V 6.0V Drain Current, ID -- A 1.6 VDS=10V 2.0 1.8 ID -- VGS 3.0 V 3.0V 2.0 200 V =2.5 , VGS .0V A 5 . 4 = I D=0 VGS .0A, I D=1 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 160 IT02723 No.6911-2/4 MCH3409 yfs -- ID 5 5C 2 3 C -25 =- 2 Ta C 75 1.0 7 5 3 2 0.1 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 0 0.4 0.6 0.8 1.4 IT02725 f=1MHz 7 5 Ciss, Coss, Crss -- pF td(off) 3 2 tf td(on) 10 7 tr 3 Ciss 2 100 7 5 Coss 3 3 Crss 2 2 1.0 0.1 1.2 Ciss, Coss, Crss -- VDS 1000 5 5 1.0 Diode Forward Voltage, VSD -- V VDD=10V VGS=4V 7 0.2 IT02724 SW Time -- ID 100 Switching Time, SW Time -- ns 1.0 7 5 2 Drain Current, ID -- A 10 2 3 5 7 2 1.0 3 Drain Current, ID -- A 0 5 10 7 5 VDS=10V ID=2A 3 2 Drain Current, ID -- A 3 2 1 0 1 2 3 Total Gate Charge, Qg -- nC IT02728 PD -- Ta 1.2 10 15 20 IT02727 ASO IDP=8A <10s 10 1m 0s s ID=2A 10 1.0 7 5 DC ms 10 0m s op era tio 3 2 n Operation in this area is limited by RDS(on). 0.1 7 5 3 2 0 5 Drain-to-Source Voltage, VDS -- V IT02726 VGS -- Qg 4 Gate-to-Source Voltage, VGS -- V 3 2 3 3 2 0.01 Allowable Power Dissipation, PD -- W VGS=0 Ta=7 5C 25C --25C VDS=10V 7 IF -- VSD 10 7 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 10 Ta=25C Single pulse Mounted on a ceramic board(900mm20.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT02729 1.0 M 0.9 ou nte 0.8 do na ce ram 0.6 ic bo ard (9 0.4 00 mm 2 0 .8m 0.2 m) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT02730 No.6911-3/4 MCH3409 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice. PS No.6911-4/4