August. 2010. Version 1.2 MagnaChip Semiconductor Ltd.
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MDP1901 – Single N-Channel Trench MOSFET 100V
Absolute Maximum Ratings (Tc = 25oC)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
V
Gate-Source Voltage
VGSS
V
Continuous Drain Current
TC=25oC
ID
A
TC=100oC
A
Pulsed Drain Current
IDM
A
Power Dissipation
TC=25oC
PD
34
W
TC=100oC
14
Single Pulse Avalanche Energy (2)
EAS
200
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient
RθJA
40
oC/W
Thermal Resistance, Junction-to-Case
RθJC
2.3
MDP1901
Single N-channel Trench MOSFET 100V, 36A, 22mΩ
Features
VDS = 100V
ID = 36A @VGS = 10V
RDS(ON)
< 22mΩ @VGS = 10V
< 25mΩ @VGS = 6.0V
General Description
The MDP1901 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDP1901 is suitable device for DC/DC Converters
and general purpose applications.
D
G
S
S
G
D
August. 2010. Version 1.2 MagnaChip Semiconductor Ltd.
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MDP1901 – Single N-Channel Trench MOSFET 100V
Ordering Information
Part Number
Temp. Range
Package
Packing
Rohs Status
MDP1901TH
-55~150oC
TO-220
Tube
Halogen Free
Electrical Characteristics (Tc =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
100
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
2.0
2.8
4.0
Drain Cut-Off Current
IDSS
VDS = 80V, VGS = 0V
-
-
1
μA
Gate Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
-
±0.1
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 35A
-
17
22
mΩ
TJ=125oC
-
28
33
VGS = 6.0V, ID = 20A
19
25
Forward Transconductance
gfs
VDS = 5V, ID = 35A
-
35
-
S
Dynamic Characteristics
Total Gate Charge
Qg
VDS = 50V, ID = 20A,
VGS = 10V
-
75
110
nC
Gate-Source Charge
Qgs
-
20
-
Gate-Drain Charge
Qgd
-
18
-
Input Capacitance
Ciss
VDS = 30V, VGS = 0V,
f = 1.0MHz
-
3045
-
pF
Reverse Transfer Capacitance
Crss
-
160
-
Output Capacitance
Coss
-
234
-
Gate Resistance
Rg
VGS=0V,VDS=0V,F=1MHz
-
0.81
-
Ω
Turn-On Delay Time
td(on)
VGS = 10V, VDS = 50V,
RL = 30Ω, RG = 6Ω
-
25
40
ns
Rise Time
tr
-
12
20
Turn-Off Delay Time
td(off)
-
70
120
Fall Time
tf
-
20
35
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
IS = 1A, VGS = 0V
-
0.7
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 20A, dl/dt = 100A/μs
-
70
100
ns
Body Diode Reverse Recovery Charge
Qrr
-
240
-
nC
Note :
1. Surface mounted RF4 board with 2oz. Copper.
2. Starting TJ=25°C, L=1mH, IAS=20A, VDD=50V, VGS=10V
August. 2010. Version 1.2 MagnaChip Semiconductor Ltd.
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MDP1901 – Single N-Channel Trench MOSFET 100V
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
010 20 30 40
10
20
30
40
VGS=6.0V
VGS=10V
RDS(ON) [mΩ ]
ID [A]
0 1 2 3 4 5
0
20
40
60
80
100
3.5V
4.0V
4.5V
6.0V ~ 10V
5.0V
ID, Drain Current[A]
VDS, Drain-Source Voltage [V]
0 1 2 3 4 5
0
5
10
15
20
125℃
*Note ; VDS=5.0V
25℃
ID [A]
VGS [V]
0.0 0.2 0.4 0.6 0.8 1.0
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
125℃
25℃
IS [A]
VSD [V]
-50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VGS=10V
ID=35A
RDS(ON), (Normalized)
Drain-Source On-Resistance [mΩ ]
TJ, Junction Temperature [oC]
4 6 8 10
0
10
20
30
40
50
60
70
25℃
125℃
RDS(ON) [mΩ ]
VGS [V]
August. 2010. Version 1.2 MagnaChip Semiconductor Ltd.
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MDP1901 – Single N-Channel Trench MOSFET 100V
10-4 10-3 10-2 10-1 100101102103
10-3
10-2
10-1
100
101
0.01
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ Ja
* Rθ Ja
(t) + Ta
RΘ JC
=2.3℃/W
single pulse
D=0.5
0.02
0.2
0.05
0.1
Zθ ja
, Normalized Thermal Response [t]
t1, Rectangular Pulse Duration [sec]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.11 Transient Thermal Response Curve
0 5 10 15 20 25 30 35 40
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS [V]
25 50 75 100 125 150
0
10
20
30
40
ID [A]
TC [℃]
10-1 100101102
10-1
100
101
102
100us
100ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
Rθ jC
=2.3℃/W
Ta=25℃
ID [A]
VDS [V]
010 20 30 40 50 60 70 80
0
1
2
3
4
5
6
7
8
9
10
* Note ; ID = 20A
VGS [V]
Qg [nC]
August. 2010. Version 1.2 MagnaChip Semiconductor Ltd.
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MDP1901 – Single N-Channel Trench MOSFET 100V
Physical Dimensions
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
August. 2010. Version 1.2 MagnaChip Semiconductor Ltd.
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MDP1901 – Single N-Channel Trench MOSFET 100V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.