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LINEAR & POWER AMPLIFIERS - SMT
HMC413QS16G / 413QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
v04.0505
General Description
Features
Functional Diagram
The HMC413QS16G & HMC413QS16GE are high
efficiency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power ampli ers which operate
between 1.6 and 2.2 GHz. The ampli er is packaged
in a low cost, surface mount 16 leaded package with
an exposed base for improved RF and thermal perfor-
mance. With a minimum of external components, the
ampli er provides 23 dB of gain, +29.5 dBm of satu-
rated power at 42% PAE from a +5V supply voltage.
The ampli er can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.
Gain: 23 dB
Saturated Power: +29.5 dBm
42% PAE
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
Included in the HMC-DK002 Designer’s Kit
Electrical Speci cations, TA = +25° C, As a Function of Vs, Vpd = 3.6V
Typical Applications
This ampli er is ideal for use as a power/driver
ampli er for 1.6 - 2.2 GHz applications:
• Cellular / PCS / 3G
• Portable & Infrastructure
• Wireless Local Loop
Parameter Frequency Vs= 3.6V Vs= 5V Units
Min. Typ. Max. Min. Typ. Max.
Gain
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.1 GHz
2.1 - 2.2 GHz
18
19
18
17
21
22
21
20
19
20
19
18
22
23
22
21
dB
dB
dB
dB
Gain Variation Over Temperature 1.6 - 2.2 GHz 0.025 0.035 0.025 0.035 dB/°C
Input Return Loss 1.6 - 2.2 GHz 10 10 dB
Output Return Loss 1.6 - 2.2 GHz 8 9 dB
Output Power for 1 dB Compression (P1dB) 1.6 - 1.7 GHz
1.7 - 2.2 GHz
20
21
23
24
23
24
26
27
dBm
dBm
Saturated Output Power (Psat) 1.6 - 1.7 GHz
1.7 - 2.2 GHz
25.5
26.5
28.5
29.5
dBm
dBm
Output Third Order Intercept (IP3)
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.2 GHz
32
33
32
35
36
35
36
37
36
39
40
39
dBm
dBm
dBm
Noise Figure 1.6 - 2.2 GHz 5.5 5.5 dB
Supply Current (Icq) Vpd= 0V/3.6V 0.002/220 0.002/270 mA
Control Current (Ipd) Vpd= 3.6V 7 7 mA
Switching Speed tON, tOFF 80 80 ns