TYPES TIC44, TiC45, TIC46, TIC47 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS SILECTt THYRISTORSt 600 mA DC 30 thru 200 VOLTS Rugged, One-Piece Construction with Standard TO-18 100-mil Pin-Circle Configuration mechanical data These thyristors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting MIL-STD-202C method 106B. The thyristors are insensitive to light. 0.015 1. CATHODE (NOTE A} 0.050 0.050 T.P.) Te. 0.100 Te, a-eare ty a S# 1 0.200 oa, OO - eeee peee 0.005 * 20.016 SS $ iL 0.017 +002 DIA. as 3 LEADS ot 0005 0.500 MIN. NOTES: A. Lead diameter is not controlled in this cree. 8. Loads having maximum diameter (0.019) sholl be within 0,007 of measured in the gaging plane 0.054 below the seating plane of th C. All dimensions ara in inches. THE GATE IS CONNECTED TO A P REGION absolute maximum ratings over operating free-air temperature range (unless otherwise noted) TIC44 | TIC4S | TIC4G | T1C47| UNIT Static Off-State Voltage, Vp (See Note 1) 30 60 100 | 200] v Repetitive Peak Off-State Voltage, Vip (See Note 1) 30 60 100 | 200] V Static Reverse Voltage, VR (See Note 1) 30 60 100 200 v Repetitive Peak Reverse Voltage, Vian (See Note 1} 30 60 100 | 200| Vv Continuous or RMS On-State Current at (or below) 55C 600 mA Case Temperature (See Note 2) Continuous or RMS On-State Current at (or below) 25C . 300 mA Free-Air Temperature (See Note 3) Average On-State Current (180 Conduction Angle) at (or below) 55C 430 mA Case Temperature (See Note 4) Surge On-State Current {See Note 5) 6 A Peak Negative Gate Voltage 8 Vv Peak Positive Gate Current (Pulse Width < 300 us) 1 A Peak Gate Power Dissipation (Pulse Width < 300 us) 4 Ww Operating Free-Air Temperature Range 55 to 125 c Storage Temperature Range 55 to 150 C Lead Temperature 1/16 Inch from Case for 10 Seconds 260 NOTES: 1. These vatues apply when the gate-cathode resistance Fok 7k2Q. 2. These vaiues apply for continuous d- operation with resistive load. Above 55C derate according to Figure 5. 3. These values apply for continuous d-c operation with resistive load. Above 25C derate according to Figure 6. 4. This value may be applied continuously under single-phase, 60-Hz, half-sine-wave operation with resistive load. Above 55C derate 5. according to Figure 5. This vaiue applies for ona 60-Hz half sine wave when the device is operating at (or below) rated values of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. t Trademark of Texas Instruments fU. S. Patent No. 3,439,238 TEXAS INSTRUMENTS 2-143TYPES TIC44, TIC45, TIC46, TIC47 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS electrical characteristics at 25C free-air temperature (unless otherwise noted) . PARAMETER TEST CONDITIONS MIN MAXIUNIT Ip Static Off-State Current Vp = Rated Vp, RGk =1k2, Ta= 125C 5O| HA ip Static Reverse Current Va = Rated VR, RGKETKR, Ta= 125C 50] uA IGT Gate Trigger Current (See Note 6) Vaa=6V, RL = 1002, tp(g) = 20 us 200] vA VoGT Gate Trigger Voltage (See Note 6) VaA=6V, RL = 1002, tolg) > 20 us 7s 08 Vv Vaan =6V, Ri = 1009, tp(g) > 20us, Ta = 125C| 0.2 lH Holding Current RL = 1009, ReKk =1ka2 S| mA Vr On-State Voltage (7 = 300 mA, RGk 2 1kQ, See Note 7 14] V NOTES: 6. When measuring these parameters, a 1-k{& resistor should be used between gate and cathode to prevent triggering by random noise. 7. This parameter is measured using pulse techniques. ty = 1 ms, duty cycle < 1%. switching characteristics at 25 C free-air temperature PARAMETER TEST CONDITIONS TYP UNIT v =30V, Ry = 502, Rg = 20kQ, Vin = 20V, tgt Gate-Controlied Turn-On Time AA | L S a 3.5 us See Figure 1 v =30V, Ri = 502, t =tA, tq Circuit-Commutated Turn-Ciff Time AA * L RM 68 bs See Figure 2 thermal characteristics PARAMETER MAX |UNIT Resc Junction-to-Case Thermal Resistance 76 CAW Resa Junction-to-Free-Air Thermal Resistance 275 2-144 TEXAS INSTRUMENTSTYPES TIC44, TIC45S, TIC46, TIC47 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS PARAMETER MEASUREMENT INFORMATION vn INPUT in 10% 1 i ro Sot al t ouTPuT | 90% VOLTAGE WAVEFORMS See Notes A, B, and C tu GENERATOR TEST CIRCUIT FIGURE 1TURN-ON TIME NOTES: A. Vin is measured with gate and cathode terminals connected as shown and anode terminal open. B. The input waveform of Figure 1 has the folfowing characteristics: ty < 40 ns, tw # 20 us. C. Waveforms are monitored on an oscilloscope with the following characteristics: t S14ns, Ri, F 10MQ, Cin < 12 pF. D. Rg includes the total resistance of the generator and the external rasistor. Vv To ie 1 VR 1 lhe tg WAVEFORMS AL 0.1105 yF . ye Vaassov ast Fr x VT MONITOR 2 THYRISTOR @--O | (SEE UNDER TEST q PO ta MONITOR Ota {NONINDUCTIVE IONITOR RESISTOR, Ri (SEE NOTE &} eS z 3a 3 a 2 Rexiathy wit (SEE {NOTE E) 7 GENERATOR SYNCHRONIZATION TEST CIRCUIT FIGURE 2COMMUTATING TURN-OFF TIME NOTES: E. Pulse generators for V4 and V2 are synchronized to provide an anode current wavetorm with the following characteristics: t,,= 50 to 300 ys, duty cycle = 1%. The pulse widths of V4 and V2 are F710 us. F. Resistor Ry is adjusted for ImM=TA. TEXAS INSTRUMENTS 2-145TYPES TIC44, TIC45, TIC46, TIC47 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS THERMAL INFORMATION MAXIMUM AVERAGE ANODE POWER DISSIPATED vs The minimum heat-sink requirements may be caicu- 10 AVERAGE ON-STATE CURRENT lated for any on-state current, heat-sink combination , 3 2 | = 125C]? & & pc by the following procedure: I= 1. Determine worst-case power dissipation from Figure 3. 0.8 2. Calculate maximum allowable case-to-free-air 0.7 thermal resistance by use of the equation. 0.6 Tj-Ta RecA= = 7 ~ReJc Patav) 0.5 where: Ty = Junction temperature 0.4 Ta = Free-air temperature 0.3 Pa(av) = Average anode power dissi- pation (see Figure 3 for worst-case values) P a(ay)Maximum Average Anode Power DissipatedW RaJc = Junction-to-case thermal resis- . Qo tance = 75C/W maximum. Q 100 200 300 400 500 600 700 + . . I Average On-State Current-mA 3. Determine area of heat sink from Figure 4. Tlav) FIGURE 3 EXAMPLE TYPICAL HEAT-SINK AREA vs CASE-TO-FREE-AIR THERMAL RESISTANCE Determine: Minimum size of 1/16-thick alumi- 1/16"-THICK ALUMINUM HEAT SINK num heat sink for safe operation of 100 thyristor at an average current of 0.4 A . . oO 70 with a conduction angle of 180 Given: Maximum Ty = 125C 40 Ta= 35C Resco = 75C 20 > Solution: From Figure 3, PA(ay) = 0.84W for i 0.4 with 180 conduction angle. & 10 Using the equation of step 2 above: x a7 no 128C 35C pen ano 5 ROCA = ~Gaaw 775 CW = 32C/W = S Mounted with Figure 4 shows that for Reca of 32C, the area > | Wakefield Engineering is 18 sq. in. The minimum dimensions of the sides Deita Bond No. 152 should be: General Purpose Epoxy Adhesive See Notes 8 and 9 1 area, farea _/18 y /1B _ 5. y 30 10 20 40 70 100 2 x 2 V 2 x 2 = 3" X3 RecaCase-To-Free-Air Thermal ResistanceC/W FIGURE 4 NOTES: 8. The thyristor is mounted in the center of a square heat sink vertically positioned in still free air with both sides expased. The heat-sink area is twice the area of one side. 9. R@ca includes the case-to-heat sink thermal resistance, Ro cys, in addition to the heat-sink-to-free-air thermal rasistance, RO HSA and is defined by the equation, Reca = RecHs + ReHsa- 2-146 TEXAS INSTRUMENTSTYPES TIC44, TIC45, TIC46, TIC47 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS 'T(av) Maximum Average On-State CurrentmA THERMAL INFORMATION AVERAGE ON-STATE CURRENT DERATING CURVE AVERAGE ON-STATE CURRENT DERATING CURVE 700 350 Continuous DC / t Continuous DC / 600 4 I Owe das & O edu Conduction 5 Conduction 500 Angle 2 Angle 5 400 & gs 300 8 E 200 3 i i 100 > = oO Oo Q 25 50 78 100 125 0 25 50 75 100 125 TcCase Temperature"C TaFree-Air TemperatureC FIGURE 5 FIGURE 6 IpStatic Off State CurrentpA Vp = Rated Vp 0.4 0.1 0.04 0.01 0.004 0.001 -75 TYPICAL CHARACTERISTICS STATIC OFF-STATE CURRENT STATIC REVERSE CURRENT vs vs FREE-AIR TEMPERATURE FREE-AIR TEMPERATURE Vp = Rated VR Rok = 1k& 4E Rex =1k2 ~-50 0.4 IR-Static Reverse CurrentuA a1 0,04 0.01 0.004 0.001 25 Qo 25 50 75 100 125 -75 -50 25 Oo 25 50 75 100 125 TaFree-Air TemperatureC TaFree-Air TemperatureC FIGURE 7 FIGURE 8 TEXAS INSTRUMENTS 2-147TYPES T1C44, TIC45, TIC46, TIC47 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE vs vs FREE-AIR TEMPERATURE FREE-AiR TEMPERATURE 3 3 6 2 oo VAA=6V RL = 1002 tp(g) > 20 Rok =1ka See Note 6 VAA=6V Ri = 100 2 to(g) > 20 us Rok =1k2 Note 6 P= 3 6 N g 2 a > o 9 ow Py VgtGate Trigger VoltageV o bh \gTGate Trigger CurrentpA 3 0.3 1 0.2 0.4 0.1 0.1 oO -75 -50 25 Go 25 50 75 100 125 75 -50 -25 0 25 50 75 100 125 TaFree-Air TemperatureC Ta~-Free-Air TemperatureC FIGURE 9 FIGURE 10 NOTE 6: When measuring these parameters, a 1-k9 resistor should be used between gate and cathode to prevent triggering by random noise, HOLDING CURRENT GATE-CONTROLLED TURN-ON TIME vs vs FREE-AIR TEMPERATURE 10 GATE CURRENT 6 T T R,_ = 1002 Vaa=30V ReK =1k2 RL =502 tp(g) > 20 us Ta = 28C N lyHolding Current-mA w tgr-Gate-Controlled Turn-On Timeps PS 0 ~75 ~5O 25 0 26 60 75 100 125 0.2 0.4 0.7 1 2 TaFree-Air Temperature"C \gqGate CurrentmA FIGURE 11 FIGURE 12 2-148 TEXAS INSTRUMENTS TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIN IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLTHYRISTOREN THYRISTORS Typ It VoRM ITSM IGT max type A Vv A mA 2N 3001 0,35 30 6 0,02 2N 3002 0,35 60 6 0,02 2N 3003 0,35 100 6 0,02 2N 3004 0,35 200 6 0,02 2N 3005 0,35 30 6 0,2 2N 3006 0,35 60 6 0,2 2N 3007 0,35 100 6 0,2 2N 3008 0,35 a 200 6 0,2 TIC 44 0,6 30 6 0,2 TIC 45 0,6 60 6 0,2 TIC 46 0,6 100 6 0,2 TIC 47 0,6 am 200 6 0,2 TIC 60 0,8 30 6 0,2 TIC 61 0,8 60 6 0,2 TIC 62 08 100 6 0,2 TIC 63 0,8 150 6 0,2 TIC 64 08 200 6 0,2 2N 5060 08 30 6 0,2 2N 5061 0,8 60 6 0,2 2N 5062 0,8 100 6 0,2 2N 5063 08 150 6 0,2 2N 5064 0,8 <= 200 6 0,2 2N 1595 1 50 15 10 2N 1596 1 100 15 10 2N 1597 i 200 15 10 2N 1598 1 300 15 10 2N 1599 1 400 15 10 TI 145 AO 1,6 50 30 25 T1145 A1 1,6 100 30 25 T1145 A2 1,6 200 30 25 TI 145 A3 1,6 300 30 25 TI 145 A4 1,6 400 30 25 TIC 39 Y 2 30 20 0,2 TIC 39 F 2 50 20 0,2 TIC 339A 2 100 20 0,2 TIC 39B 2 200 20 0,2 TIC 39C 2 300 20 0,2 TIC 39D 2 400 20 0,2 TIC 106 Y 5 30 30 0,2 TIC 106 F 5 50 30 0,2 TIC 106A 5 100 30 0,2 TIC 106 B 5 200 30 0,2 TIC 106 C 5 300 30 0,2 TIC 106 D 5 400 30 0,2 TIC 116 Siehe Datenblatt Seite 2-155; See Data Sheet Page 2-155 TIC 126 Siehe Datenblatt Seite 2-155; See Data Sheet Page 2-155 TIC 236 Siehe Datenblatt Seite 2-165; See Data Sheet Page 2-165 TIC 246 Siehe Datenblatt Seite 2-165; See Data Sheet Page 2-165 TIC 253 Siehe Datenblatt Seite 2-167; See Data Sheet Page 2-167 TIC 263 Siehe Datenblatt Seite 2-167; See Data Sheet Page 2-167 3-18 TEXAS INSTRUMENTSVGT max tH max VT max @ Gehause Vv mA Vv package 0,7 3 1,2 TO-18 0,7 3 1,2 TO-18 0,7 3 1,2 TO-18 0,7 3 1,2 TO-18 0,8 5 1,2 TO-18 0,8 5 1,2 TO-18 08 5 1,2 TO-18 08 5 1,2 TO-18 0,8 5 1,4 Silect 08 5 14 Silect 0,8 5 1,4 Silect 0,8 5 14 Silect 0,8 5 17 TO-92 0,8 5 7 TO-92 0,8 5 1,7 TO-92 2,8 5 1,7 TO-92 2,8 5 1,7 TO-92 3,8 5 1,7 TO-92 1,8 5 1,7 TO-92 2,8 5 1,7 TO-92 1,8 5 1,7 TO-92 3,8 5 1,7 TO-92 3 25 2 TO0-5 3 25 2 TO-5 3 25 2 TO-5 3 25 2 TO-5 3 25 2 TO-5 3,5 25 2 TO-5 35 25 2 TO-5 3,5 25 2 TO-5 3,5 25 2 TO-5 3,5 25 2 TO-5 1 5 1,75 TO-39 | 5 1,75 TO-39 | 5 1,75 TO-39 \ 5 1,75 TO-39 1 5 1,75 TO-39 I 5 1,75 TO-39 I 5 1,7 TO-66P | 5 1,7 TO-66P | 5 1,7 TO-66P | 5 1,7 TO-66P 4 5 4,7 TO-66P I 5 1,7 TO-66P TEXAS INSTRUMENTS 3-19