Unmounted Laser Bars 20 W cw ... 100 W qcw SPL Bxxx Features * Unmounted monolithic linear array * High efficiency MOVPE-grown quantum well structure * Highly reliable strained layer InGa(Al)As/GaAs material * Standard wavelength selection is 3 nm, others on request * Solderable p- and n-side metalization Applications * Pumping of solid state lasers (Nd: YAG, Yb: YAG, ...) * Direct industrial applications (soldering, surface treatment, marking, ...) * Heating, illumination * Medical and printing application Type Power Wavelength1) Ordering Code SPL BG81 SPL BG94 SPL BG98 25 W .. 30 W cw 808 nm 940 nm 980 nm Q62702-P1654 Q62702-P1733 Q62702-P3259 SPL BS79 SPL BS81 SPL BS94 50 W .. 100 W qcw 794 nm 808 nm 940 nm Q62702-P3257 Q62702-P1719 Q62702-P3258 1) Other wavelengths in the range of 780 ... 980 nm are available on request. Semiconductor Group 1/2 1997-11-24 SPL Bxxx Characterictics (TA = 25 C) Parameter Symbol Wavelength Typical Values Unit BGxx BSxx 20 ... 30 cw 50 ... 100 qcw W Recommended output power 1) Popt - Catastrophic optical damage limit 1), 2) PCOD 808nm > 80 940nm > 130 > 110 > 200 W Ith - < 17 A - > 0.85 tot - > 35 Beam divergence (FWHM) x || 808nm 940nm Standard pulse wavelength 2), 3) pulse 808nm 802 940nm 934 Spectral width (FWHM) - Fill factor F - 50 80 % Emitter width (Structure) w - 200 (20 x 3) 100 - m m Pitch p - 400 126 m Bar width (Emitters per bar) W - 10.0 25 10.0 77 mm Cavity length L - 600 m Bar thickness H - 115 10 m Threshold current 2) Differential quantum efficiency 2) Total conversion efficiency 1) < 11 45 x 12 38 x 12 804 935 <4 W/A % Deg. nm nm 1) Depending on mounting technique, i.e. on the resulting thermal resistance. 2) Calculated from measurements on one emitter of an unmounted bar (1 s pulses at 1 kHz repetition rate). 3) Differing pulse wavelengths are available on request. Semiconductor Group 2/2 1997-11-24