Semiconductor Group 1 / 2 1997-11-24
Unmounted Laser Bars SPL Bxxx
20 W cw ... 100 W qcw
Features
• Unmounted monolithic linear array
• High efficiency MOVPE-grown quantum well structure
• Highly reliable strained layer InGa(Al)As/GaAs material
• Standard wavelength selection is ± 3 nm, others on
request
• Solderable p- and n-side metalization
Applications
• Pumping of solid state lasers (Nd: YAG, Yb: YAG, ...)
• Direct industrial applications (soldering, surface treatment, marking, ...)
• Heating, illumination
• Medical and printing application
Type Power Wavelength1) Ordering Code
SPL BG81
SPL BG94
SPL BG98
25 W .. 30 W cw 808 nm
940 nm
980 nm
Q62702-P1654
Q62702-P1733
Q62702-P3259
SPL BS79
SPL BS81
SPL BS94
50 W .. 100 W qcw 794 nm
808 nm
940 nm
Q62702-P3257
Q62702-P1719
Q62702-P3258
1) Other wavelengths in the range of 780 ... 980 nm are available on request.
SPL Bxxx
Semiconductor Group 2 / 2 1997-11-24
Characterictics
(TA = 25 °C)
Parameter Symbol Wave-
length Typical Values Unit
BGxx BSxx
Recommended output
power 1)
P
opt – 20 ... 30
cw 50 ... 100
qcw W
Catastrophic optical
damage limit 1), 2)
P
COD ≤ 808nm
≥ 940nm > 80
> 130 > 110
> 200 W
Threshold current 2)
I
th – < 11 < 17 A
Differential quantum
efficiency 2) η– > 0.85 W/A
Total conversion efficiency 1) ηtot – > 35 %
Beam divergence (FWHM) θ⊥ × θ|| ≤ 808nm
≥ 940nm 45° × 12°
38° × 12° Deg.
Standard pulse
wavelength 2), 3) λpulse ≤ 808nm
≥ 940nm 802
934 804
935 nm
Spectral width (FWHM) ∆λ –< 4nm
Fill factor
F
–5080%
Emitter width
(Structure)
w
– 200
(20 × 3) 100
–µm
µm
Pitch
p
– 400 126 µm
Bar width
(Emitters per bar)
W
– 10.0
25 10.0
77 mm
Cavity length
L
– 600 µm
Bar thickness
H
– 115 ± 10 µm
1) Depending on mounting technique, i.e. on the resulting thermal resistance.
2) Calculated from measurements on one emitter of an unmounted bar (1 µs pulses at 1 kHz repetition
rate).
3) Differing pulse wavelengths are available on request.
