ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW30N110R3 Datasheet IndustrialPowerControl IHW30N110R3 ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode Features: C *Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly *Verytightparameterdistribution *Highruggedness,temperaturestablebehavior *LowVCEsat *Easyparallelswitchingcapabilityduetopositivetemperature coefficientinVCEsat *LowEMI *QualifiedaccordingtoJEDECfortargetapplications *Pb-freeleadplating;RoHScompliant *CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: G *Inductivecooking *Inverterizedmicrowaveovens *Resonantconverters *Softswitchingapplications C E KeyPerformanceandPackageParameters Type IHW30N110R3 VCE IC VCEsat,Tvj=25C Tvjmax Marking Package 1100V 30A 1.55V 175C H30R1103 PG-TO247-3 2 Rev.2.1,2015-01-26 IHW30N110R3 ResonantSwitchingSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 3 Rev.2.1,2015-01-26 IHW30N110R3 ResonantSwitchingSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emitter voltage VCE 1100 V DCcollectorcurrent,limitedbyTvjmax TC=25C TC=100C IC 60.0 30.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 90.0 A TurnoffsafeoperatingareaVCE1100V,Tvj175C - 90.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25C TC=100C IF 60.0 30.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A Gate-emitter voltage TransientGate-emittervoltage(tp10s,D<0.010) VGE 20 25 V PowerdissipationTC=25C PowerdissipationTC=100C Ptot 333.0 166.0 W Operating junction temperature Tvj -40...+175 C Storage temperature Tstg -55...+175 C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.45 K/W Diode thermal resistance, junction - case Rth(j-c) 0.45 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 4 Rev.2.1,2015-01-26 IHW30N110R3 ResonantSwitchingSeries ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 1100 - - VGE=15.0V,IC=30.0A Tvj=25C Tvj=125C Tvj=175C - 1.55 1.85 2.00 1.75 - - 1.35 1.38 1.41 1.55 6.4 Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=30.0A Tvj=25C Tvj=125C Tvj=175C Gate-emitter threshold voltage VGE(th) IC=0.70mA,VCE=VGE 5.1 5.8 Zero gate voltage collector current ICES VCE=1100V,VGE=0V Tvj=25C Tvj=175C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=30.0A - 15.0 - S Integrated gate resistor rG V V 5.0 A 2500.0 none ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1460 - - 55 - - 45 - - 180.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=880V,IC=30.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 350 - ns - 16 - ns - 1.15 - mJ IGBTCharacteristic,atTvj=25C Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Tvj=25C, VCC=600V,IC=30.0A, VGE=0.0/15.0V, RG(on)=15.0,RG(off)=15.0, L=80nH,C=39pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 5 Rev.2.1,2015-01-26 IHW30N110R3 ResonantSwitchingSeries SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 410 - ns - 60 - ns - 1.80 - mJ IGBTCharacteristic,atTvj=175C Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Tvj=175C, VCC=600V,IC=30.0A, VGE=0.0/15.0V, RG(on)=15.0,RG(off)=15.0, L=80nH,C=39pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 6 Rev.2.1,2015-01-26 IHW30N110R3 ResonantSwitchingSeries 100 100 90 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 80 70 TC=80 60 TC=110 50 40 30 tp=1s 10 10s 20s 50s 500s 1 5ms DC 20 10 0 1 10 100 0.1 1000 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj175C,D=0.5,VCE=600V,VGE=0/15V, RG=15) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25C,Tj175C;VGE=15V) 350 60 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 300 250 200 150 100 40 20 50 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj175C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE15V,Tj175C) 7 Rev.2.1,2015-01-26 IHW30N110R3 ResonantSwitchingSeries 90 90 80 17V 15V 60 13V 11V 50 9V 40 7V 5V 30 17V 15V 60 11V 9V 40 5V 10 10 1 2 0 3 7V 30 20 0 13V 50 20 0 VGE=20V 70 IC,COLLECTORCURRENT[A] 70 IC,COLLECTORCURRENT[A] 80 VGE=20V 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] 1 2 3 4 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25C) Figure 6. Typicaloutputcharacteristic (Tj=175C) 90 80 VCE(sat),COLLECTOR-EMITTERSATURATION[V] 25C Tj=175C IC,COLLECTORCURRENT[A] 70 60 50 40 30 20 10 0 4 6 8 10 12 IC=15A IC=30A IC=60A 3 2 1 14 VGE,GATE-EMITTERVOLTAGE[V] 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.1,2015-01-26 IHW30N110R3 ResonantSwitchingSeries td(off) tf td(off) tf 1000 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 10 10 20 30 40 50 100 10 60 10 20 IC,COLLECTORCURRENT[A] 30 40 50 RG,GATERESISTANCE[] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (ind.load,Tj=175C,VCE=600V,VGE=0/15V, RG(on)=15,RG(off)=15,testcircuitinFig.E) Figure 10. Typicalswitchingtimesasafunctionofgate resistance (ind.load,Tj=175C,VCE=600V,VGE=0/15V, IC=30A,testcircuitinFig.E) 8 t,SWITCHINGTIMES[ns] 1000 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf 100 10 1 25 50 75 100 125 150 typ. min. max. 7 6 5 4 3 2 175 Tj,JUNCTIONTEMPERATURE[C] 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,VCE=600V,VGE=0/15V,IC=30A, RG(on)=15,RG(off)=15,testcircuitinFig.E) Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.7mA) 9 Rev.2.1,2015-01-26 IHW30N110R3 ResonantSwitchingSeries 4 3 Eoff E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff 3 2 1 0 0 15 30 45 2 1 0 60 10 20 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,Tj=175C,VCE=600V,VGE=0/15V, RG(on)=15,RG(off)=15,testcircuitinFig.E) 50 2.2 Eoff E,SWITCHINGENERGYLOSSES[mJ] Eoff E,SWITCHINGENERGYLOSSES[mJ] 40 Figure 14. Typicalswitchingenergylossesasa functionofgateresistance (ind.load,Tj=175C,VCE=600V,VGE=0/15V, test circuit in Fig. E) 2 1 0 30 RG,GATERESISTANCE[] 25 50 75 100 125 150 2.0 1.8 1.6 1.4 1.2 300 175 Tj,JUNCTIONTEMPERATURE[C] 400 500 600 700 800 900 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (indload,VCE=600V,VGE=0/15V,IC=30A, RG(on)=15,RG(off)=15,testcircuitinFig.E) Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load,Tj=175C,VGE=0/15V,IC=30A, RG(on)=15,RG(off)=15,testcircuitinFig.E) 10 Rev.2.1,2015-01-26 IHW30N110R3 ResonantSwitchingSeries 16 220V 880V 12 1000 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 Cies Coes Cres 100 4 2 0 0 40 80 120 160 10 200 QGE,GATECHARGE[nC] 10 30 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 1 ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 4.5E-3 0.1058 0.152 0.1827 i[s]: 9.8E-6 3.2E-4 2.9E-3 0.01487178 0.001 1E-6 20 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 17. Typicalgatecharge (IC=30A) ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] 0 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 4.5E-3 0.1058 0.152 0.1827 i[s]: 9.8E-6 3.2E-4 2.9E-3 0.01487178 0.001 1E-6 1 tp,PULSEWIDTH[s] 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 19. IGBTtransientthermalimpedance (D=tp/T) Figure 20. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 11 Rev.2.1,2015-01-26 IHW30N110R3 ResonantSwitchingSeries 60 2 Tj=25C Tj=175C IF=15A IF=30A IF=60A VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 50 40 30 20 10 0 0 1 1 2 VF,FORWARDVOLTAGE[V] 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[C] Figure 21. Typicaldiodeforwardcurrentasafunction offorwardvoltage 12 Figure 22. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.1,2015-01-26 IHW30N110R3 ResonantSwitchingSeries PG-TO247-3 13 Rev.2.1,2015-01-26 IHW30N110R3 ResonantSwitchingSeries VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 14 Rev.2.1,2015-01-26 IHW30N110R3 Resonant Switching Series Revision History IHW30N110R3 Revision: 2015-01-26, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2009-12-01 - 1.2 2011-01-21 Package drawing Rev. 05 1.3 2013-02-12 Layout change 2.1 2015-01-26 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 Munchen, Germany (c) 2015 Infineon Technologies AG All Rights Reserved. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.1, 2015-01-26 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: IHW30N110R3FKSA1