ResonantSwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW30N110R3
Datasheet
IndustrialPowerControl
2
IHW30N110R3
ResonantSwitchingSeries
Rev.2.1,2015-01-26
ReverseconductingIGBTwithmonolithicbodydiode
Features:
•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•Verytightparameterdistribution
•Highruggedness,temperaturestablebehavior
•LowVCEsat
•Easyparallelswitchingcapabilityduetopositivetemperature
coefficientinVCEsat
•LowEMI
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Inductivecooking
•Inverterizedmicrowaveovens
•Resonantconverters
•Softswitchingapplications
G
C
E
G
C
E
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IHW30N110R3 1100V 30A 1.55V 175°C H30R1103 PG-TO247-3
3
IHW30N110R3
ResonantSwitchingSeries
Rev.2.1,2015-01-26
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
4
IHW30N110R3
ResonantSwitchingSeries
Rev.2.1,2015-01-26
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1100 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC60.0
30.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 90.0 A
TurnoffsafeoperatingareaVCE≤1100V,Tvj≤175°C - 90.0 A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF60.0
30.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20
±25 V
PowerdissipationTC=25°C
PowerdissipationTC=100°C Ptot 333.0
166.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+175 °C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3 M0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
junction - case Rth(j-c) 0.45 K/W
Diode thermal resistance,
junction - case Rth(j-c) 0.45 K/W
Thermal resistance
junction - ambient Rth(j-a) 40 K/W
5
IHW30N110R3
ResonantSwitchingSeries
Rev.2.1,2015-01-26
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1100 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.55
1.85
2.00
1.75
-
-
V
Diode forward voltage VF
VGE=0V,IF=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.35
1.38
1.41
1.55
-
-
V
Gate-emitter threshold voltage VGE(th) IC=0.70mA,VCE=VGE 5.1 5.8 6.4 V
Zero gate voltage collector current ICES
VCE=1100V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
-
5.0
2500.0
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=30.0A - 15.0 - S
Integrated gate resistor rGnone Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 1460 -
Output capacitance Coes - 55 -
Reverse transfer capacitance Cres - 45 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=880V,IC=30.0A,
VGE=15V - 180.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-off delay time td(off) - 350 - ns
Fall time tf- 16 - ns
Turn-off energy Eoff - 1.15 - mJ
Tvj=25°C,
VCC=600V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=15.0Ω,RG(off)=15.0Ω,
Lσ=80nH,Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
6
IHW30N110R3
ResonantSwitchingSeries
Rev.2.1,2015-01-26
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°C
Turn-off delay time td(off) - 410 - ns
Fall time tf- 60 - ns
Turn-off energy Eoff - 1.80 - mJ
Tvj=175°C,
VCC=600V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=15.0Ω,RG(off)=15.0Ω,
Lσ=80nH,Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
7
IHW30N110R3
ResonantSwitchingSeries
Rev.2.1,2015-01-26
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tj≤175°C,D=0.5,VCE=600V,VGE=0/15V,
RG=15Ω)
f,SWITCHINGFREQUENCY[kHz]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0
10
20
30
40
50
60
70
80
90
100
TC=80°
TC=110°
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tj≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0.1
1
10
100
tp=1µs
10µs
20µs
50µs
500µs
5ms
DC
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
50
100
150
200
250
300
350
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
25 50 75 100 125 150 175
0
20
40
60
8
IHW30N110R3
ResonantSwitchingSeries
Rev.2.1,2015-01-26
Figure 5. Typicaloutputcharacteristic
(Tj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0123
0
10
20
30
40
50
60
70
80
90
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6. Typicaloutputcharacteristic
(Tj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0 1 2 3 4
0
10
20
30
40
50
60
70
80
90
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 7. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
4 6 8 10 12 14
0
10
20
30
40
50
60
70
80
90
25°C
Tj=175°C
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tj,JUNCTIONTEMPERATURE[°C]
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
25 50 75 100 125 150 175
1
2
3
IC=15A
IC=30A
IC=60A
9
IHW30N110R3
ResonantSwitchingSeries
Rev.2.1,2015-01-26
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(ind.load,Tj=175°C,VCE=600V,VGE=0/15V,
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
10 20 30 40 50 60
10
100
1000
td(off)
tf
Figure 10. Typicalswitchingtimesasafunctionofgate
resistance
(ind.load,Tj=175°C,VCE=600V,VGE=0/15V,
IC=30A,testcircuitinFig.E)
RG,GATERESISTANCE[Ω]
t,SWITCHINGTIMES[ns]
10 20 30 40 50
10
100
1000
td(off)
tf
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(ind.load,VCE=600V,VGE=0/15V,IC=30A,
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)
Tj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
1
10
100
1000
td(off)
tf
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.7mA)
Tj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
25 50 75 100 125 150 175
2
3
4
5
6
7
8
typ.
min.
max.
10
IHW30N110R3
ResonantSwitchingSeries
Rev.2.1,2015-01-26
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175°C,VCE=600V,VGE=0/15V,
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
0 15 30 45 60
0
1
2
3
4
Eoff
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistance
(ind.load,Tj=175°C,VCE=600V,VGE=0/15V,
test circuit in Fig. E)
RG,GATERESISTANCE[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
10 20 30 40 50
0
1
2
3
Eoff
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(indload,VCE=600V,VGE=0/15V,IC=30A,
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)
Tj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
0
1
2
Eoff
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(ind.load,Tj=175°C,VGE=0/15V,IC=30A,
RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
300 400 500 600 700 800 900
1.2
1.4
1.6
1.8
2.0
2.2
Eoff
11
IHW30N110R3
ResonantSwitchingSeries
Rev.2.1,2015-01-26
Figure 17. Typicalgatecharge
(IC=30A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 40 80 120 160 200
0
2
4
6
8
10
12
14
16
220V
880V
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 10 20 30
10
100
1000 Cies
Coes
Cres
Figure 19. IGBTtransientthermalimpedance
(D=tp/T)
tp,PULSEWIDTH[s]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
4.5E-3
9.8E-6
2
0.1058
3.2E-4
3
0.152
2.9E-3
4
0.1827
0.01487178
Figure 20. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
tp,PULSEWIDTH[s]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
4.5E-3
9.8E-6
2
0.1058
3.2E-4
3
0.152
2.9E-3
4
0.1827
0.01487178
12
IHW30N110R3
ResonantSwitchingSeries
Rev.2.1,2015-01-26
Figure 21. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
012
0
10
20
30
40
50
60
Tj=25°C
Tj=175°C
Figure 22. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Tj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
25 50 75 100 125 150 175
1
2
IF=15A
IF=30A
IF=60A
13
IHW30N110R3
ResonantSwitchingSeries
Rev.2.1,2015-01-26
PG-TO247-3
14
IHW30N110R3
ResonantSwitchingSeries
Rev.2.1,2015-01-26
t
ab
td(off) tftr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE(t)
t
t
t
t1t4
2% IC
10% VGE
2% VCE
t2t3
Et
tV I t
off = x x d
1
2
CE C
Et
tV I t
on = x x d
3
4
CE C
CC
dI /dt
F
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switching
characteristics
Figure E. Dynamic test circuit
Figure D.
I (t)
C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Q
rr a b
rr a b
= +
= +
QaQb
V (t)
CE
VGE(t)
I (t)
C
V (t)
CE
15
IHW30N110R3
Resonant Switching Series
Rev. 2.1, 2015-01-26
Revision History
IHW30N110R3
Revision: 2015-01-26, Rev. 2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2009-12-01 -
1.2 2011-01-21 Package drawing Rev. 05
1.3 2013-02-12 Layout change
2.1 2015-01-26 Final data sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@infineon.com
Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Infineon:
IHW30N110R3FKSA1