For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
SWITCHES - SPDT - SMT
1
HMC435AMS8G / 435AMS8GE
v00.0213
SPDT NON-REFLECTIVE
SWITCH, DC - 4 GHz
General Description
Features
Functional Diagram
High Isolation: 62 dB @ 1 GHz
52 dB @ 2 GHz
Single Positive Control: 0/+5V
Input IP3: 54 dBm
Non-Reective Design
Ultra Small MSOP-86 Package: 14.8 mm2
Typical Applications
The HMC435AMS8G(E) is ideal for:
• Basestations & Repeaters
• Cellular/3G and WiMAX/4G
• Infrastructure and Access Points
• CATV/CMTS
• Test Instrumentation
The HMC435AMS8G(E) is a non-reective DC to
4 GHz GaAs MESFET SPDT switch in a low cost 8
lead MSOP8G surface mount package with exposed
ground paddle. The switch is ideal for cellular/3G and
WiMAX/4G applications yielding up to 60 dB isolation,
low 0.8 dB insertion loss and +50 dBm input IP3. Power
handling is excellent up through the 3.8 GHz WiMAX
band with the switch offering a P1dB compression of
+30 dBm. On-chip circuitry allows positive voltage
control of 0/+5 Volts at very low DC currents.
Electrical Specications, TA = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System
Parameter Frequency Min. Typ. Max. Units
Insertion Loss
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
0.8
1.0
1.2
1.0
1.5
1.8
dB
dB
dB
Isolation (RFC to RF1/RF2)
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
56
46
43
37
30
62
52
48
42
40
dB
dB
dB
dB
dB
Return Loss (On State)
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
15
13
11
23
17
14
dB
dB
dB
Return Loss (Off State) 0.5 - 4.0 GHz 16 21 dB
Input Power for 1 dB Compression 0.5 - 4.0 GHz 27 30 dBm
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
0.5 - 1.0 GHz
0.5 - 2.5 GHz
0.5 - 4.0 GHz
48
45
41
54
53
51
dBm
dBm
dBm
Switching Speed DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
40
60
ns
ns