1
PTB 20239
12 Watts, 1465–1513 MHz
Cellular Radio RF Power Transistor
Typical Output Power vs. Input Pow er
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Input Power (Watts)
Output Power (Watts)
VCC = 26 V
ICQ = 25 mA
f = 1513 MHz
Package 20232
20239
LOT CODE
Description
The PTB 20239 is a class AB, NPN, common emitter RF power
transistor intended for 26 Vdc operation from 1465 to 1513 MHz.
Rated at 12 watts minimum output power , it may be used for both CW
and PEP applications. Ion implantation, nitride surface passivation
and gold metallization ensure excellent device reliability. 100% lot
traceability is standard.
12 Watts, 26 Vdc
Class AB Characteristics
Surface Mountable
Available in Tape and Reel
Gold Metallization
Silicon Nitride Passivated
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage VCER 50 Vdc
Collector-Base Voltage VCBO 50 Vdc
Emitter-Base Voltage (collector open) VEBO 4 Vdc
Collector Current (continuous) IC2.0 Adc
Total Device Dissipation at Tflange = 25°C PD33 Watts
Above 25°C derate by 0.189 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (Tflange = 70°C) RθJC 5.3 °C/W
9/28/98
PTB 20239
2
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 5 mA, RBE = 22 ΩV(BR)CER 50 — — Volts
Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 50 — — Volts
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts
DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 — — —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(VCC = 26 Vdc, POUT = 10 W, ICQ = 25 mA, f = 1513 MHz) Gpe 8——dB
Power Output at 1 dB Compression
(VCC = 26 Vdc, ICQ = 25 mA, f = 1513 MHz) P-1dB 12 13 — Watts
Collector Efficiency
(VCC = 26 Vdc, POUT = 12 W, ICQ = 25 mA, f = 1513 MHz) ηC40 — — %
Load Mismatch Tolerance
(VCC = 26 Vdc, POUT = 12 W, ICQ = 25 mA, Ψ— — 5:1 —
f = 1513 MHz—all phase angles at frequency of test)
Typical Performance
Gain vs. Frequency
(as measured in a broadband c ircuit)
6
7
8
9
10
11
1465 1475 1485 1495 1505 1515
Frequency (MHz)
Gain (dB)
VCC = 26 V
ICQ = 25 mA
POUT = 12 W
Efficiency vs. O utput Power
0
10
20
30
40
50
60
70
80
2 4 6 8 10 12 14
Output Power (Wa tts)
Efficiency (%)
VCC = 26 V
ICQ = 25 mA
f = 1513 MHz
4
/30/98
PTB 20239
3
Z Source Z Load
Frequency Z Source Z Load
MHz R jX R jX
1465 4.84 4.15 7.52 10.26
1490 4.45 5.33 7.16 11.29
1515 4.13 6.39 6.89 12.25
Z0 = 50 Ω
Impedance Data (shown for fixed-tuned broadband circuit)
VCC = 26 Vdc, POUT = 12 W, ICQ = 25 mA
Typical Scattering Parameters
(VCE = 26 V, IC = 0.250 A)
f S11 S21 S12 S22
(MHz) Mag Ang Mag Ang Mag Ang Mag Ang
100 0.914 -179 6.76 103 0.018 34 0.597 172
200 0.920 180 5.58 99 0.019 40 0.591 173
300 0.930 177 3.28 85 0.025 51 0.581 176
400 0.930 175 2.46 77 0.031 56 0.581 177
500 0.924 174 2.02 69 0.037 58 0.578 179
600 0.916 172 1.75 62 0.044 59 0.580 180
700 0.909 171 1.56 56 0.051 59 0.580 179
800 0.901 170 1.43 49 0.057 58 0.570 180
900 0.895 168 1.35 42 0.064 57 0.566 -179
1000 0.882 167 1.30 35 0.070 56 0.561 -177
1100 0.867 165 1.28 28 0.076 54 0.564 -175
1200 0.844 164 1.28 19 0.082 51 0.569 -173
1300 0.818 163 1.30 9 0.086 48 0.584 -170
1400 0.785 163 1.32 -2 0.087 45 0.614 -167
1500 0.756 165 1.34 -16 0.084 42 0.672 -164
1600 0.744 168 1.33 -32 0.077 42 0.755 -164
1700 0.768 171 1.26 -51 0.071 48 0.852 -167
1800 0.823 173 1.13 -70 0.072 61 0.932 -171
1900 0.888 172 0.951 -88 0.086 72 0.980 -177
2000 0.941 169 0.766 -105 0.108 75 0.995 177
2100 0.974 166 0.601 -121 0.131 75 0.987 172
2200 0.992 162 0.467 -135 0.153 72 0.972 168
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
© 1997 Ericsson Inc.
EUS/KR 1301-PTB 20239 Uen Rev. A 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
