Document Number: 94589 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 17-Sep-09 1
Surface Mountable
Phase Control SCR, 16 A
16TTS..SPbF High Voltage Series
Vishay High Power Products
DESCRIPTION/FEATURES
The 16TTS..SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125 °C junction
temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be
used with Vishay HPP input diodes, switches
and output rectifiers which are available in identical package
outlines.
This product has been designed and qualified for industrial
level.
Compliant to RoHS directive 2002/95/EC.
Halogen-free according to IEC 61249-2-21 definition.
Note
•T
A = 55 °C, TJ = 125 °C, footprint 300 mm2
PRODUCT SUMMARY
VT at 10 A < 1.4 V
ITSM 200 A
VRRM 800 V/1200 V
3
Gate
2
Anode
1
Cathode
D
2
PAK
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 µm) copper 2.5 3.5
A
Aluminum IMS, RthCA = 15 °C/W 6.3 9.5
Aluminum IMS with heatsink, RthCA = 5 °C/W 14.0 18.5
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IT(AV) Sinusoidal waveform 10 A
IRMS 16
VRRM/VDRM 800/1200 V
ITSM 200 A
VT10 A, TJ = 25 °C 1.4 V
dV/dt 500 V/µs
dI/dt 150 A/µs
TJ- 40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
16TTS08SPbF 800 800 10
16TTS12SPbF 1200 1200
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94589
2Revision: 17-Sep-09
16TTS..SPbF High Voltage Series
Vishay High Power Products Surface Mountable
Phase Control SCR, 16 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum average on-state current IT(AV) TC = 98 °C, 180° conduction, half sine wave 10
A
Maximum RMS on-state current IRMS 16
Maximum peak, one-cycle,
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied 170
10 ms sine pulse, no voltage reapplied 200
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 144 A2s
10 ms sine pulse, no voltage reapplied 200
Maximum I2√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 2000 A2√s
Maximum on-state voltage drop VTM 10 A, TJ = 25 °C 1.4 V
On-state slope resistance rtTJ = 125 °C 24.0 mΩ
Threshold voltage VT(TO) 1.1 V
Maximum reverse and direct leakage current IRM/IDM
TJ = 25 °C VR = Rated VRRM/VDRM
0.5
mA
TJ = 125 °C 10
Holding current IHAnode supply = 6 V, resistive load, initial IT = 1 A - 100
Maximum latching current ILAnode supply = 6 V, resistive load 200
Maximum rate of rise of off-state voltage dV/dt 500 V/µs
Maximum rate of rise of turned-on current dI/dt 150 A/µs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0 W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current + IGM 1.5 A
Maximum peak negative gate voltage - VGM 10 V
Maximum required DC gate current to trigger IGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 90
mA
Anode supply = 6 V, resistive load, TJ = 25 °C 60
Anode supply = 6 V, resistive load, TJ = 125 °C 35
Maximum required DC gate
voltage to trigger VGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 3.0
V
Anode supply = 6 V, resistive load, TJ = 25 °C 2.0
Anode supply = 6 V, resistive load, TJ = 125 °C 1.0
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.25
Maximum DC gate current not to trigger IGD 2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.9
µsTypical reverse recovery time trr TJ = 125 °C 4
Typical turn-off time tq110
Document Number: 94589 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 17-Sep-09 3
16TTS..SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 16 A Vishay High Power Products
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 40 to 125 °C
Soldering temperature TSFor 10 s (1.6 mm from case) 240
Maximum thermal resistance,
junction to case RthJC DC operation 1.3
°C/W
Typical thermal resistance,
junction to ambient RthJA PCB mount (1) 40
Approximate weight 2g
0.07 oz.
Marking device Case style D2PAK (SMD-220) 16TTS08S
16TTS12S
www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94589
4Revision: 17-Sep-09
16TTS..SPbF High Voltage Series
Vishay High Power Products Surface Mountable
Phase Control SCR, 16 A
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
90
95
100
105
110
115
120
125
024681012
30°
60° 90°
120°
180°
Conduction Angle
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
16TTS.. Series
R (DC) = 1.3 °C/W
thJC
90
95
100
105
110
115
120
125
0246810121416
DC
30° 60°
90°
120° 180°
Maximum Allowable Case Temperature (°C)
Conduction Period
Average On-state Current (A)
16TTS.. Series
R (DC) = 1.3 °C/W
thJC
0
2
4
6
8
10
12
14
16
18
01234567891011
RMS Limit
180°
120°
90°
60°
30°
Cond uction Angle
Average On-state Current (A)
Max imum Average On-state Power Loss (W)
16TTS.. Series
T = 125°C
J
0
5
10
15
20
25
024681012141618
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Average On-state Current (A)
Max imum Average On-state Power Loss ( W)
16TTS.. Series
T = 125°C
J
80
100
120
140
160
180
110100
Numb er Of Equa l Amplit ude Half Cycle Current Pu lses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM
J
Peak Half Sine Wave On-state Current (A)
16TTS..Series
80
100
120
140
160
180
200
0.01 0.1 1
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
Versus Pulse Train Duration.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
16TTS.. Series
Document Number: 94589 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 17-Sep-09 5
16TTS..SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 16 A Vishay High Power Products
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
Fig. 9 - Gate Characteristics
1
10
100
1000
012345
T = 25°C
J
T = 125°C
J
Instantaneous On-st ate Voltage (V)
Instantaneous On-state Current (A)
16TTS.. Series
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Steady State Value
(DC Operation)
16TTS.. Series
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Transient Thermal Impedance Z (°C/W)
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
Instantaneous Gate Curren t (A)
Instantaneous Gate Voltage (V)
TJ = 25
°C
TJ = 125 °C
b)Recommended load line for
VGD
IGD Frequency Limited by PG(AV)
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
TJ = -10 °C
16TTS.. Series
www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94589
6Revision: 17-Sep-09
16TTS..SPbF High Voltage Series
Vishay High Power Products Surface Mountable
Phase Control SCR, 16 A
ORDERING INFORMATION TABLE
1- Current rating
2- Circuit configuration:
3- Package:
4
5- Voltage rating: Voltage code x 100 = VRRM
T = Single thyristor
- Type of silicon:
T = TO-220AC
S = Standard recovery rectifier
7-
8-
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
None = Standard production
PbF = Lead (Pb)-free
08 = 800 V
12 = 1200 V
6- S = TO-220 D2PAK (SMD-220) version
Device code
51324
678
16 T T S 12 S TRL PbF
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
