Ordering number: EN 3203 | 25D2116 NPN Epitaxial Planar Silicon Transistor General Driver Applications Features - Darlington connection - High DC current gain - Large current capacity, wide ASO Absolute Maximum Ratings at Ta= 25C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current(Pulse) Collector Dissipation _ Junction Temperature Storage Temperature Vcso VcEO VEBO Electrical Characteristics at Ta= 25C Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Electrical Connection = Lo C . TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN IcBo lEBO hre(1) hpg(2) fy Cob VcE(sat) VBE(sat) V(BR)CBO ViBRICEO V(BR)EBO Vop40V Ip=0 Vep=8V,Ic=0 Vor=2V, Ic =50mA Vce2V,Ic=500mA Vcoe=5V,Ic=50mA Vop=10V f=1MHz Ic=100mA,lp=0.lmA Ic =100mA, Ip =0.1mA Ic=10pA,Ig=0 Ic=1mA,Rgp= Ip=10pA,Ic=0 Package Dimensions 2064 (unit: mm ) 6.9 unit 80 V 50 Vv 10 Vv 0.7 A 2 A 1 Ww 150 C 55 to + 150 C min typ max 100 100 5000 4000 200 9 0.8 1.2 1.4 2.0 80 , 50 10 25 45 | 1 a | | i 2.34 2% SANYO Electric Co.,Ltd. Semiconductor Business Headquarters ea} E: Emitter T/ C; Collector B: Base SANYO: NMP 0269MO, TS No.3203-1/328D2116 wm Ic ~ Vee bh aoe ob. z qoy 0 yooh _- g Y - | _ wb i Ss 20 ; 4 t & SpA S ! i | [00 j----- | ~ f-- _--- ope -- a a ee | 0 \ Ip=0 oO I 2 3 4 5 5 Collector to Emitter Voltage, Ver V hre - Ic Vce=2v ; | i T,= 75 C oo 5 a oa ed & 18000 oC Q 10 Collector CurrentjI mA 10 Vee(sat) Ic {c/Ig = 1000 m4 I a 6 1) vo be | a aS ? | a : es i 33 2310 4+ lo, : a3 . T= 25C | 25C {oo 1 [a eer rt | l WC, || 10 73 7 10 > ? 1000 Collector Current,lc mA ASO 0.1 Collector Current,[; A - Ta=25C Single pulse - 1.0 2 WL 8 Collector to Emitter Voltage, Voz V 0.01 Ic - Voe 1000 Ver=2V 8 8 8 Collector Current,ilg mA 8 0 o Output Capacitance,c,, pF 3 04 08 702 Base to Emitter Voltage,Vpp V Cob V 10 f= Collector to Base Voltage,Vog V 0 Vee(sat) Ic IcfIg = 1000 > Ig 5 1] a > eo bo no 2 3 s T= 26C . a c . Be 2 : 5 1.0 ! A5C am , ; faa / > 10 > 1m , (000 Collector Current; mA P - 12 ia Ta = 10 I NY oO m 0.8 N g N 3 a 06 NN a 5 a tet 8 0.4 2 8 o2 X 0 N * 20 140180 20 MD ceil 80 100 Ambient Temperature,Ta C No.3203-2/325D2116 @ No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M@ Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or itigation on SANYO ELECTRIC GO. LTD. its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.3203-3/3