IRFR420TRPbF HEXFET(R) Power MOSFET Benefits Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount (IRFR420) Available in Tape and Reel Fast Switching Ease of Paralleling Pb-Free ; RoHS Compliant ; Halogen-Free VDSS 500V RDS(on) max 3.0 ID (Silicon Limited) 2.4A D G S D Description S G Third Generation HEXFETs from Infineon Technology provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak IRFR420TRPbF G Gate Base part number Package Type IRFR420PbF D-Pak Final Datasheet www.infineon.com Standard Pack Form Tape and Reel Quantity 2000 D Drain S Source Orderable Part Number IRFR420TRPbF Please read the important Notice and Warnings at the end of this document V2.0 2017-08-01 HEXFET(R) Power MOSFET IRFR420TRPbF Table of Contents Table of Contents Benefits ..........................................................................................................................1 Ordering Table ......................................................................................................................1 Table of Contents ...................................................................................................................2 1 Parameters ............................................................................................................3 2 Maximum ratings, Thermal, and Avalanche characteristics .............................................4 3 Electrical characteristics ..........................................................................................5 4 Electrical characteristic diagrams ..............................................................................6 Package Information ............................................................................................................11 Qualification Information .........................................................................................................13 Revision History ....................................................................................................................14 Final Datasheet 2 V2.0 2017-08-01 HEXFET(R) Power MOSFET IRFR420TRPbF Parameters 1 Parameters Table1 Key performance parameters Parameter Values Units VDS 500 V RDS(on) max 3.0 ID 2.4 A Final Datasheet 3 V2.0 2017-08-01 HEXFET(R) Power MOSFET IRFR420TRPbF Maximum ratings and thermal characteristics 2 Maximum ratings and thermal characteristics Table 2 Maximum ratings (at TJ=25C, unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) Linear Derating Factor Linear Derating Factor (PCB Mount) Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Table 3 Thermal characteristics Parameter Symbol Junction-to-Case RJC Junction-to-Ambient (PCB Mount) RJA Junction-to-Ambient RJA Table 4 ID ID IDM PD PD VGS TJ TSTG Values Unit TC = 25C, VGS @ 10V TC = 100C, VGS @ 10V TC = 25C TC = 25C TA = 25C TC = 25C TA = 25C - 2.4 1.5 8.0 42 2.5 0.33 0.02 20 - -55 to + 150 - 260 - Conditions TJ approximately 90C - Min. - Typ. - A W W/C V Max. 3.0 50 110 C Unit C/W Avalanche characteristics Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Symbol Values Unit EAS (Thermally limited) IAR 400 2.4 mJ A EAR 4.2 mJ Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Figure 11). Limited by TJmax , starting TJ = 25C, L = 139mH, RG = 25, IAS = 2.4A, VGS =10V. (See Figure 10). ISD 2.4A, di/dt 50A/s, VDD V(BR)DSS, TJ 150C. Pulse width 300s; duty cycle 2%. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.please refer to application note to AN-994. R is measured at TJ approximately 90C. Final Datasheet 4 V2.0 2017-08-01 HEXFET(R) Power MOSFET IRFR420TRPbF Electrical characteristics 3 Electrical characteristics Table 5 Static characteristics Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Static Drain-to-Source On-Resistance RDS(on) Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 1.4A VDS = VGS, ID = 250A VDS =500V, VGS =0V 2.0 - - 4.0 25 VDS =400V,VGS = 0V,TJ =125C - - 250 - - 100 -100 Gate Threshold Voltage VGS(th) Drain-to-Source Leakage Current IDSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage IGSS IGSS VGS = 20V VGS = -20V Symbol Conditions Forward Trans conductance gfs Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDS = 50V, ID = 1.4A ID = 2.1A VDS = 400V VGS = 10V See Fig.6 and 13 VDD = 250V ID = 2.1A Table 6 Internal Drain Inductance LD Internal Source Inductance Ls Input Capacitance Output Capacitance Reverse Transfer Capacitance V V/C V A nA Min. 1.5 RG = 18 RD = 120See Fig.10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Coss Crss VGS = 0V VDS = 25V = 1.0MHz, See Fig.5 Values Typ. Max. - - 8.0 8.6 33 16 19 3.3 13 - - 4.5 - - 7.5 - - 360 92 37 - Unit S nC ns nH pF Reverse Diode Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Peak Diode Recovery dv/dt Symbol IS Conditions MOSFET symbol showing the integral reverse p-n junction diode. Min. D Values Typ. Max. - - 2.4 - - 8.0 G ISM S Unit A VSD TJ = 25C, IS = 2.4A,VGS = 0V - - 1.6 V dv/dt TJ = 150C, IS = 2.1A,VDS = 500V - - 3.5 V/ns - 260 520 ns - 0.7 1.4 C Reverse Recovery Time trr TJ = 25C Reverse Recovery Charge Qrr TJ = 25C Final Datasheet Unit Dynamic characteristics Parameter Table 7 Values Typ. Max. 0.59 3.0 Min. 500 - 5 IF = 2.1A, di/dt = 100A/s V2.0 2017-08-01 HEXFET(R) Power MOSFET IRFR420TRPbF Electrical characteristic diagrams 4 Electrical characteristic diagrams Figure 1 Typical Output Characteristics, TC = 25C Figure 3 Figure 2 Typical Output Characteristics, TC = 150C Figure 4 Normalized On-Resistance vs. Temperature Typical Transfer Characteristics Final Datasheet 6 V2.0 2017-08-01 HEXFET(R) Power MOSFET IRFR420TRPbF Electrical characteristic diagrams Figure 5 Typical Source-Drain Diode Forward Voltage Final Datasheet Figure 6 Typical Capacitance vs. Drain-to-Source Voltage Figure 7 Typical Gate Charge vs. Gate-to-Source Voltage Figure 8 7 Maximum Safe Operating Area V2.0 2017-08-01 HEXFET(R) Power MOSFET IRFR420TRPbF Electrical characteristic diagrams 1000 EAS , Single Pulse Avalanche Energy (mJ) 2.4 ID, Drain Current (A) 2.0 1.6 1.2 0.8 0.4 800 600 400 200 0 0.0 25 50 75 100 125 25 150 50 75 100 125 150 Starting TJ , Junction Temperature (C) TC , Case Temperature (C) ID 1.1A 1.5A BOTTOM 2.4A TOP Figure 9 Maximum Drain Current vs. Case Temperature Figure 10 Maximum Avalanche Energy vs. Temperature Thermal Response ( Z thJC ) C/W 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Figure 11 Final Datasheet Maximum Effective Transient Thermal Impedance, Junction-to-Case 8 V2.0 2017-08-01 HEXFET(R) Power MOSFET IRFR420TRPbF Electrical characteristic diagrams Figure 12a Switching Time Test Circuit Figure 12b Switching Time Waveforms Figure 13 Final Datasheet Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFETTM Power MOSFETs 9 V2.0 2017-08-01 HEXFET(R) Power MOSFET IRFR420TRPbF Electrical characteristic diagrams Figure 14a Unclamped Inductive Test Circuit Figure 14b Unclamped Inductive Waveforms Gate Charge Waveform Figure 15b Gate Charge Test Circuit Figure 15a Final Datasheet 10 V2.0 2017-08-01 HEXFET(R) Power MOSFET IRFR420TRPbF Package Information 5 Package Information D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Final Datasheet 11 V2.0 2017-08-01 HEXFET(R) Power MOSFET IRFR420TRPbF Package Information D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Final Datasheet 12 V2.0 2017-08-01 HEXFET(R) Power MOSFET IRFR420TRPbF Qualification Information 6 Qualification Information Qualification Information Industrial (per JEDEC JESD47F) Qualification Level Moisture Sensitivity Level D-Pak RoHS Compliant MSL1 Yes Applicable version of JEDEC standard at the time of product release. Final Datasheet 13 V2.0 2017-08-01 HEXFET(R) Power MOSFET IRFR420TRPbF Revision History Revision History Major changes since the last revision Page or Reference Revision All pages Final Datasheet 1.0 Date Description of changes 2017-08-01 First release data sheet. 14 V2.0 2017-08-01 Trademarks of Infineon Technologies AG HVICTM, IPMTM, PFCTM, AU-ConvertIRTM, AURIXTM, C166TM, CanPAKTM, CIPOSTM, CIPURSETM, CoolDPTM, CoolGaNTM, COOLiRTM, CoolMOSTM, CoolSETTM, CoolSiCTM, DAVETM, DI-POLTM, DirectFETTM, DrBladeTM, EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPACKTM, EconoPIMTM, EiceDRIVERTM, eupecTM, FCOSTM, GaNpowIRTM, HEXFETTM, HITFETTM, HybridPACKTM, iMOTIONTM, IRAMTM, ISOFACETM, IsoPACKTM, LEDrivIRTM, LITIXTM, MIPAQTM, ModSTACKTM, my-dTM, NovalithICTM, OPTIGATM, OptiMOSTM, ORIGATM, PowIRaudioTM, PowIRStageTM, PrimePACKTM, PrimeSTACKTM, PROFETTM, PRO-SILTM, RASICTM, REAL3TM, SmartLEWISTM, SOLID FLASHTM, SPOCTM, StrongIRFETTM, SupIRBuckTM, TEMPFETTM, TRENCHSTOPTM, TriCoreTM, UHVICTM, XHPTM, XMCTM Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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