1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
BLF7G22L-160;
BLF7G22LS-160
Power LDMOS transistor
Rev. 2.1 — 2 November 2011 Product data sheet
Table 1. Typical performance
Ty pical RF performance at Tcase = 25
C in a common source class-AB production test circuit.
Mode of operation f IDq VDS PL(AV) GpDACPR
(MHz) (mA) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 2110 to 2170 1300 28 43 18.0 30 32[1]
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 2 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF7G22L-160 (SOT 502A)
1drain
2gate
3source [1]
BLF7G22LS-160 (SOT5 02B)
1drain
2gate
3source [1]
3
2
1
sym112
1
3
2
3
2
1
sym112
1
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLF7G22L-160 - flanged LDMOST ceramic package; 2 mounting holes;
2 leads SOT502A
BLF7G22LS-160 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
IDdrain current - 36 A
Tstg storage temperature 65 +150 C
Tjjunction temperature - 200 C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase =80C; PL= 55 W 0.29 K/W
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 3 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
6. Characteristics
7. Test information
7.1 Ruggedness in class-AB operation
The BLF7G22L-160 and BLF7G22LS-160 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS =28V; I
Dq =1300mA; P
L= 160 W; f = 2110 MHz.
Table 6. Characteristics
Tj = 25
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdo wn vol tage VGS =0V; I
D=2.16mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 216 mA 1.5 1.9 2.3 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 4.5 A
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 34 - - A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 450 nA
gfs forward transconductance VDS =10V; I
D=10.8A - 20 - S
RDS(on) dr ain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID=7.56A -0.06-
Table 7. Ap plication information
Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 28 V; IDq = 1300 mA; Tcase = 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) = 43 W 16.5 18.0 - dB
RLin input return loss PL(AV) = 43 W - 15 6.5 dB
Ddrain efficiency PL(AV) = 43 W 27 30 - %
ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 43 W - 32 28 dBc
Table 8. Ap plication information
Mode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 PDPCH; f = 2167.5 MHz; RF performance at VDS = 28 V ; IDq = 1300 mA; Tcase = 25
C;
unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PAROoutput peak-to-average ratio PL(AV) =100W;
at 0.01 % probability on CCDF 3.9 4.15 - dB
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 4 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
7.2 2-Carrier W-CDMA 5 MHz
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 1. Power gain and dra in effic i ency as function of lo ad pow er; typ ic al values
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 2. Adjacent channel powe r ratio (5 MHz) as a
function of load power; typical values Fig 3. Adjacent cha nnel power ratio (10 MHz) as a
function of load power; typical values
PL (dBm)
28 534838 4333
001aan987
16
18
14
20
22
Gp
(dB)
12
20
30
10
40
50
ηD
(%)
0
(1)
(2)
Gp
ηD
PL (dBm)
28 534838 4333
001aan988
-40
-30
-50
-20
-10
ACPR5M
(dBc)
-60
(2)
f - 5 MHz
f + 5 MHz
(1)
PL (dBm)
28 534838 4333
001aan989
-50
-40
-60
-30
-20
ACPR10M
(dBc)
-70
(1)
(2)
f - 10 MHz
f + 10 MHz
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 5 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
7.3 2-Carrier W-CDMA 10 MHz
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 4. Input return loss as functio n of load power;
typical values Fig 5. Peak-to-average power ration as function of
load power; typical values
PL (dBm)
28 534838 4333
001aan990
20
10
30
40
RLin
(dB)
0
(1)
(2)
PL (dBm)
28 534838 4333
001aan991
3
6
9
PAR
(dB)
0
(2)
(1)
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 6. Power gain and dra in effic i ency as function of lo ad pow er; typ ic al values
PL (dBm)
28 534838 4333
001aan992
16
18
14
20
22
12
20
30
10
40
50
ηD
(%)
0
Gp
(dB)
ηD
(1)
(2)
Gp
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 6 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
7.4 1-Carrier W-CDMA
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 7. Adjacent channel powe r ratio (5 MHz) as a
function of load power; typical values Fig 8. Adjacent cha nnel power ratio (10 MHz) as a
function of load power; typical values
PL (dBm)
28 534838 4333
001aan993
-50
-30
-10
ACPR5M
(dBc)
-70
(2)
f - 5 MHz
f + 5 MHz
(1)
PL (dBm)
28 534838 4333
001aan994
-50
-30
-10
ACPR10M
(dBc)
-70
f - 10 MHz
f + 10 MHz
(2)
(1)
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 9. Power gain and dra in effic i ency as function of lo ad pow er; typ ic al values
PL (dBm)
28 534838 4333
001aan995
16
18
14
20
22
Gp
(dB)
12
20
30
10
40
50
ηD
(%)
0
Gp
ηD
(1)
(2)
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 7 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 10. Adjacent cha nne l powe r ratio (5 MHz) as a
function of load power; typical values Fig 11. Adjacent channel power ratio (10 MHz) as a
function of load power; typical values
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 12. Peak-to-average power rati on as function of load power; typical value s
PL (dBm)
28 534838 4333
001aan996
-50
-40
-60
-30
-20
ACPR5M
(dBc)
-70
(2)
f - 5 MHz
f + 5 MHz
(1)
PL (dBm)
28 534838 4333
001aan997
-60
-50
-40
ACPR10M
(dBc)
-70
(2)
f - 10 MHz
f + 10 MHz
(1)
PL (dBm)
28 534838 4333
001aan998
4
2
6
8
PAR
(dB)
0
(1)
(2)
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 8 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
7.5 IS-95
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 13. Power gain and drain efficiency as func ti on of lo ad power; typical values
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz; f + 885 kHz
(2) f = 2170 MHz; f + 885 kHz
(3) f = 2110 MHz; f 885 kHz
(4) f = 2170 MHz; f 885 kHz
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz; f + 1980 kHz
(2) f = 2170 MHz; f + 1980 kHz
(3) f = 2110 MHz; f 1980 kHz
(4) f = 2170 MHz; f 1980 kHz
Fig 14. Adjacent cha nne l powe r ratio (5 MHz) as a
function of load power; typical values Fig 15. Adjacent channel power ratio (10 MHz) as a
function of load power; typical values
PL (dBm)
28 534838 4333
001aan999
16
18
14
20
22
Gp
(dB)
12
20
30
10
40
50
ηD
(%)
0
Gp
ηD
(1)
(2)
PL (dBm)
28 534838 4333
001aao000
-50
-40
-60
-30
-20
ACPR885k
(dBc)
-70
(3)
(4)
(2)
(1)
PL (dBm)
28 534838 4333
001aao001
-70
-80
-60
-50
ACPR1980k
(dBc)
-90
(3)
(4)
(1)
(2)
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 9 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
7.6 CW
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 16. Peak-to-average power ration as function of load power; typical values
PL (dBm)
28 534838 4333
001aao002
4
8
12
PAR
(dB)
0
(1)
(2)
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 17. Power gain and drain efficiency as function of load power; typical values
001aao003
PL (dBm)
38 565044
16
18
14
20
22
Gp
(dB)
12
24
36
12
48
60
ηD
(%)
0
ηD
Gp
(2)
(1)
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 10 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
7.7 CW-pulsed
VDS = 28 V; IDq = 1300 mA; tp = 0.10 ms; = 10 %.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 18. Power gain and drain efficiency as function of load power; typical values
001aao004
PL (dBm)
38 565044
16
18
14
20
22
Gp
(dB)
12
24
36
12
48
60
ηD
(%)
0
ηD
Gp
(2)
(1)
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 11 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
7.8 Test circuit
[1] American Technical Ceramics type 800B or capacitor of same quality.
[2] American Technical Ceramics type 100A or capacitor of same quality.
[3] TDK or capacitor of same quality.
Printed-Circuit Board (PCB): Taconic RF35; r = 3.5; thickness = 0.76 mm; thickness copper plating = 35 m.
See Table 9 for a list of components.
Fig 19. Component layout for class-AB production test circuit
NXP
BLF7G22L(S)-160
Input Rev 01
R1
C1
C5
C11
C8
C13 C15
C9
C6
C3
50.0 mm50.0 mm
60.0
mm
60.0
mm
NXP
BLF7G22L-160
Output Rev 01
001aao005
Table 9. List of components
For test circuit see Figure 19.
Component Description Value Remarks
C1, C5, C8, C9 multilayer ceramic chip capacitor 68 pF [1]
C3, C11 multilayer ceramic chip capacitor 820 pF [2]
C6, C13 multilayer ceramic chip capacitor 10 F[3]
C15 electrolytic capacitor 470 F; 63 V
R1 SMD resistor 12 Philips 1206
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 12 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
7.9 Impedance information
Table 10. Typical impedance
Ty pical values unless otherwise specified.
f ZSZL
MHz
2050 1.39 j4.13 1.41 j3.80
2080 1.67 j3.93 1.38 j3.63
2110 2.01 j3.89 1.35j3.45
2140 2.28j4.09 1.33 j3.28
2170 2.27 j4.47 1.31 j3.12
2200 1.92j4.76 1.28 j2.95
2230 1.42 j4.75 1.26 j2.79
Fig 20. Definition of tran si s t or imp e da nc e
001aaf059
drain
Z
L
Z
S
gate
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 13 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
8. Package outline
Fig 21. Package outline SOT502A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502A 99-12-28
03-01-10
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
p
L
AF
b
D
U2
H
Q
c
1
3
2
D1
E
A
C
q
U1
C
B
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25 0.5127.94
qw
2
w1
F
1.14
0.89
U1
34.16
33.91
L
5.33
4.32
p
3.38
3.12
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.01 0.021.100
0.045
0.035 1.345
1.335
0.210
0.170 0.133
0.123 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
w1AB
M M M
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 14 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
Fig 22. Package outline SOT502B
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502B 03-01-10
07-05-09
0 5 10 mm
scale
Earless flanged LDMOST ceramic package; 2 leads SOT502B
AF
b
D
U2
L
H
Q
c
1
3
2
D1
E
D
U1
D
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25
w2
F
1.14
0.89
U1
20.70
20.45
L
5.33
4.32
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.010
0.045
0.035 0.815
0.805
0.210
0.170 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 15 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
9. Abbreviations
10. Revision history
Table 11. Abbreviations
Acronym Description
3GPP Third Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
DPCH Dedicated Physical CHannel
ESD ElectroStatic Discharge
LDMOS Laterally Diffused Metal Oxide Semiconductor
LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor
PAR Peak-to-Average power Ratio
PDPCH transmission Power of the Dedicated Physical CHannel
RF Radio Frequency
SMD Surface Mounted Device
VSWR Voltage Standing Wave Ratio
W-CDMA Wideband Code Division Multiple Access
Table 12. Revision history
Document ID Release date Data sheet status Change
notice Supersedes
BLF7G22L-160_7G22LS-160 v.2.1 20111102 Product data sheet - BLF7G22L-160_7G22LS-160 v.2
Modifications: •Table 3: amended package descriptions
BLF7G22L-160_7G22LS-1 60 v.2 20111020 Product data sheet - BLF7G22L-160_7G2 2LS-160 v. 1
Modifications: •The status of this document has been chan ged to Product data sheet
•Table 7 on page 3: the minimum value for D has been changed
BLF7G22L-160_7G22LS-1 60 v.1 20110427 Preliminary data sheet - -
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 16 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full informatio n see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificatio n — The information and data provided in a Product
data sheet shall define the specification of the product as agr eed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
11.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregat e and cumulative liabil ity towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suit able for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors pro duct can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with t heir
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessa ry
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress rating s only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by cust omer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyri ghts, paten ts or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Pro duction This document contains the product specification.
BLF7G22L-160_7G22LS-160 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2.1 — 2 November 2011 17 of 18
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for aut omo tive use. It i s neit her qua lif ied nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applicati ons.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever cust omer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product cl aims resulting from custome r design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
11.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 November 2011
Document identifier: BLF7G22L-160_7G22LS-160
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation . . . . . . . . . 3
7.2 2-Carrier W-CDMA 5 MHz . . . . . . . . . . . . . . . . 4
7.3 2-Carrier W-CDMA 10 MHz . . . . . . . . . . . . . . . 5
7.4 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
7.5 IS-95. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
7.6 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7.7 CW-pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
7.8 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7.9 Impedance information. . . . . . . . . . . . . . . . . . 12
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 15
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
12 Contact information. . . . . . . . . . . . . . . . . . . . . 17
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
